arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2008.01983cond-mat.mes-hallcond-mat.supr-con
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四重线四端超导器件中的反转:II。量子点与Floquet理论

Inversion in a four terminal superconducting device on the quartet line: II. Quantum dot and Floquet theory

Régis Mélin, Benoît Douçot

摘要:

在本文中,我们考虑一个量子点连接到四个超导终端偏置在相反的电压上的四重线。接地超导体包含一个由磁通量$Φ$穿过的回路。我们提供了四重态电流的电压- $V$依赖性的Keldysh微观计算和物理图片。预计在$Φ/Φ_0=0$的超导性比在$Φ/Φ_0=1/2$的超导性强。然而,在电压- $V$范围内的四重线上的临界电流$I_{q,c}(V,Φ/Φ_0)$中获得反转$I_{q,c}(V,0)<I_{q,c}(V,1/2)$,该电压- $V$范围匹配在$(V,Φ/Φ_0=0)$但不在$(V,1/2)$处的Floquet谱中避免的交叉。$I_{q,c}$的减少出现在那些避免的交叉点附近,在那里Landau-Zener隧穿产生Andreev束缚态的动态量子力学叠加。此外,随着$V$进一步增加,在电流-相位关系中出现$π$-$0$和$0$-$π$交叉。电压引起的$π$ -移位被解释为起源于由电压偏置产生的非平衡Floquet种群。数值计算结果表明,该反演对强Landau-Zener隧穿和量子点中的多能级具有鲁棒性。我们的理论提供了一个简单的“Floquet水平和人口”机制的反转调整的偏置电压$V$,这铺平了道路,为更现实的模型,为最近的哈佛大学小组实验中观察到的反转。

英文摘要:

In this paper, we consider a quantum dot connected to four superconducting terminals biased at opposite voltages on the quartet line. The grounded superconductor contains a loop threaded by the magnetic flux $Φ$. We provide Keldysh microscopic calculations and physical pictures for the voltage-$V$ dependence of the quartet current. Superconductivity is expected to be stronger at $Φ/Φ_0=0$ than at $Φ/Φ_0=1/2$. However, inversion $I_{q,c}(V,0)<I_{q,c}(V,1/2)$ is obtained in the critical current $I_{q,c}(V,Φ/Φ_0)$ on the quartet line in the voltage-$V$ ranges which match avoided crossings in the Floquet spectrum at $(V,Φ/Φ_0=0)$ but not at $(V,1/2)$. A reduction in $I_{q,c}$ appears in the vicinity of those avoided crossings, where Landau-Zener tunneling produces dynamical quantum mechanical superpositions of the Andreev bound states. In addition, $π$-$0$ and $0$-$π$ cross-overs emerge in the current-phase relations as $V$ is further increased. The voltage-induced $π$-shift is interpreted as originating from the nonequilibrium Floquet populations produced by voltage biasing. The numerical calculations reveal that the inversion is robust against strong Landau-Zener tunneling and many levels in the quantum dot. Our theory provides a simple ``Floquet level and population'' mechanism for inversion tuned by the bias voltage $V$, which paves the way towards more realistic models for the recent Harvard group experiment where the inversion is observed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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