Starting from the numerical solution of the 6-band \textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic semiconductor, we propose and test phenomenological models of the effect of the built-in strain on the heavy hole, light hole and exciton states. We test the validity and the limits of a description restricted to a ($Γ_8$) quadruplet of ground states and we demonstrate the role of the interactions of the light-hole state with light-hole excited states. We show that the built-in axial strain not only defines the character, heavy-hole or light-hole, of the ground state, but also mixes significantly the light-hole state with the split-off band's states: Even for a spin-orbit energy as large as 1 eV, that mixing induces first-order modifications of properties such as the spin value and anisotropy, the oscillator strength, and the electron-hole exchange, for which we extend the description to the light-hole exciton. CdTe/ZnTe quantum dots are mainly used as a test case but the concepts we discuss apply to many heterostructures, from mismatched II-VI and III-V quantum dots and nanowires, to III-V nanostructures submitted to an applied stress and to silicon nanodevices with even smaller residual strains.
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $\bf k\cdot p$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four and six bands, and with results from a one-band approximation in which m(r) is determined by the local value of the strain. The eight-band model predicts a lower ground state energy and a la…
We study the magnetization of square and hexagonal graphene dots. It is shown that two classes of hexagonal dots have a second order phase transition at a critical Hubbard energy $U$, whoose value is similar to the one in bulk graphene, albeit the dots do not have a density of states proportional to the absolute value of the energy, relatively to the Dirac point. Furthermore, we show that a particular class of hexagonal dots having zig-zag edges, does not exhibit zero energy edge states. We also study the effect of uniaxial strain on the evolution of the magnetization of square dots, and find …
We calculate the electronic structure of nm scale InP islands embedded in $Ga_{0.51}In_{0.49}P$. The calculations are done in the envelope approximation and include the effects of strain, piezoelectric polarization, and mixing among 6 valence bands. The electrons are confined within the entire island, while the holes are confined to strain induced pockets. One pocket forms a ring at the bottom of the island near the substrate interface, while the other is above the island in the GaInP. The two sets of hole states are decoupled. Polarization dependent dipole matrix elements are calculated for b…
Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Successful development of these devices depends strongly on techniques allowing structural analysis on the nanometer scale. However, commonly used microscopy methods are destructive, leading to the loss of the important link between the obtained structural information and the electronic and optical properties of the device. Alternative non-invasive techniques such as optically detected nuclear magnetic resonance (ODNMR) …
We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conduction and valence band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it has a smaller effect on WZ GaN/AlGaN, and very little effect on ZB GaN/AlN quantum dots. As a result, the exciton ground state energy in WZ GaN/AlN quantum dots, with heights larger than 3 nm, exhibits a…
Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quantum dot to qubit logic demonstrations. Here we present a measurement of the out-of-plane $g$-factor for single-hole quantum dots in this material. As this is a single-hole measurement, this is the first experimental result that avoids the strong orbital effects present in the out-of-plane configuration. In addition to verifying the expected $g$-factor anisotropy between in-plane and out-of-plane magnetic ($B$)-fields,…
We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and strain-free GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spectra in both strained and strain-free structures. However, the excitonic fine structure splitting, polarization anisotropy and polarization direction in strained quantum dots remain nearly unaffected,…
In this study we numerically calculate the spatial profile of mechanical strain on self-assembled germanium (Ge) quantum dots (QDs) grown on a silicon (Si) substrate. Although the topic has been exhaustively studied, interesting features have not been explained or even mentioned in the literature yet. We studied the effect of the cap layer considering two cases: capped QDs (where a Si cap is present above the Ge QDs) and uncapped QDs (where no Si is present above the Ge QDs). We observed that Ge in the capped QDs is more strained compared with the the uncapped QDs. This expected effect is attr…
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade (CB) is measured in a double-top-gated lateral quantum dot nanostructure. The CB terminates with open diamonds up to \pm 10 mV of DC v…
The dynamic response of InAs/GaAs self-assembled quantum dots (QDs) to strain is studied experimentally by periodically modulating the QDs with a surface acoustic wave and measuring the QD fluorescence with photoluminescence and resonant spectroscopy. When the acoustic frequency is larger than the QD linewidth, we resolve phonon sidebands in the QD fluorescence spectrum. Using a resonant pump laser, we have demonstrated optical frequency conversion via the dynamically modulated QD, which is the physical mechanism underlying laser sideband cooling a nanomechanical resonator by means of an embed…
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin-orbit cou…
We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger dot sizes that could ameliorate constraints on device fabrication. Compared to electrons in quantum dots, hole qubits do not suffer from the presence of nearby quantum levels (e.g., valley states) that…
Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and identify an optimal height and size for efficient EIT operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing fou…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative voltages to these gates the underlying electron gas is depleted and a lateral quantum dot is formed, the size of which can be adjusted by the gate voltage. We observe single-electron operation with Coulomb blockade behavior below 1K. Gate leakage currents are well controlled, indicating that the recently encountered problems with Schottky gates for this type of…
The long-wavelength physics of monolayer graphene in the presence of periodic strain fields has a natural chiral scattering network description. When the strain field varies slowly compared to the graphene lattice and the effective magnetic length of the induced valley pseudomagnetic field, the low-energy physics can be understood in terms of valley-polarized percolating domain-wall modes. Inspired by a recent experiment, we consider a strain field with threefold rotation and mirror symmetries but without twofold rotation symmetry, resulting in a system with the connectivity of the oriented ka…
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two Ge/Si dots can be controlled very sensitively by shifting the ind…
We introduce a method which enables to directly compare the impact of elastic strain on the optical properties of distinct quantum dots (QDs). Specifically, the QDs are integrated in a cross-section of a semiconductor core wire which is surrounded by an amorphous straining shell. Detailed numerical simulations show that, thanks to the mechanical isotropy of the shell, the strain field in a core section is homogeneous. Furthermore, we use the core material as an in situ strain gauge, yielding reliable values for the emitter energy tuning slope. This calibration technique is applied to self-asse…
Decoherence in quantum logic gates (qubits) due to interaction with the surrounding environment is a major obstacle to the practical realization of quantum information technologies. For solid state electron-spin qubits the interaction with nuclear spins is the main problem. One particular, neradicable source of electron decoherence arises from decoherence of the nuclear spin bath, driven by nuclear-nuclear dipolar interactions. Due to its many-body nature nuclear decoherence is difficult to predict, especially for an important class of strained nanostructures where nuclear quadrupolar effects …
We study the temperature dependent magnetic susceptibility of a strained graphene quantum dot by using the determinant quantum Monte Carlo method. Within the Hubbard model on a honeycomb lattice, our unbiased numerical results show that a relative small interaction $U$ may lead to a edge ferromagnetic like behavior in the strained graphene quantum dot, and a possible room temperature transition is suggested. Around half filling, the ferromagnetic fluctuations at the zigzag edge is strengthened both markedly by the on-site Coulomb interaction and the strain, especially in low temperature region…
We investigate spin properties of a Fe2+ dopant, known for having single nondegenerate ground state in bulk host semiconductor. Due to zero magnetic moment such a ground state is of little use for spintronics and solotronics. We show that this well-established picture of Fe2+ spin configuration can be contradicted by subjecting the Fe2+ ion to sufficiently high strain, e.g., resulting from lattice mismatched epitaxial heterostructures. Our analysis reveals that high strain induces qualitative change in the ion energy spectrum and results in doubly degenerate ground state with spin projection S…
The intermediate band (IB) cell is a concept of highly efficient solar cells proposed by Luque and Marti in 1997. The IB concept uses nonlinear effect of two photon absorption enforced with concentration of such photons for generation of additional photocurrent in single p-n-junction cells. In this theoretical work we demonstrate an important role of self-organized strained type-II AlyGa1-ySb quantum dots for operation in IB GaAs solar cells.
Elastic strain distributions in SiGe heterostructures with quantum dots have been simulated with the use of the finite element method. The effect of a non-uniform germanium distribution in the nanoislands on the spatial dependence and the magnitude of elastic fields was studied. It is shown that quantum dots with a uniform component content are more strained in comparison with non-uniform nanoislands
Self-assembled quantum dots (QDs) are born out of lattice mismatched ingredients where strain plays an indispensable role. Through the electric quadrupolar coupling, strain affects the magnetic environment as seen by the nuclear spins. To guide prospective single-QD nuclear magnetic resonance (NMR) as well as dynamic nuclear spin polarization experiments, an atomistic insight to the strain and quadrupolar field distributions is presented. A number of implications of the structural and compositional profile of the QD have been identified. A high aspect ratio of the QD geometry enhances the quad…
The exciton ground state in strained quantum dots similar to those fabricated in article specified in the title is shortly discussed within a relevant model Hamiltonian. Some characteristics of the light--hole exciton ground state reached in a dot under the tensile biaxial strain appear to be sensitive to the strain anisotropy breaking a purity of this state. It refers in particular to a degree of the in--plane polarization of the emission and the fine structure of the ground state.
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot, which can confine hole states exhibiting quantum ring characteristics. The magnetotunneling spectroscopy exhibits the predicted periodicity of energy states in ϕ/\phi0, but the magnitude of the energy shifts is larger than predicted by simple ring theory. Our results suggest a new way to fabricate and study quantum ring structures.
We study the influence of ripple waves originating from the electromechanical effects on spin relaxation caused by electromagnetic fields in armchair and zigzag graphene nanoribbons (GNRs). By utilizing analytical expressions supported by numerical simulations, we show that it is possible to tune the spin flip behaviors ON and OFF due to ripple waves in GNRs for potential applications in straintronic devices. This finding is similar to recently made observations on the design of spintronic devices in III-V semiconductor quantum dots, where the sign change in the effective Land$\mathrm{\acute{e…
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained g…
Spintronics, quantum computing and quantum communication science utilizing cubic semiconductors rely largely on the properties of the hole states, composed of light and heavy hole wavefunction components. The admixture of light-hole (LH) into ground hole state predominately by the heavy hole (HH) would induce unique features of LH in optical transitions, spin relaxation, and spin polarization. We point to an unexpected source of HH-LH mixing in quantum dots, arguing that in contrast with current models the mixing does not reflect the strain between the dot and its matrix and does not scale inv…
The effect of Rashba spin-orbit interaction and anisotropic strain on the electronic, optical and thermodynamic properties of artificial graphene-like superlattice composed of InAs-GaAs quantum dots has been considered theoretically. The electronic energy dispersions have been obtained using Green's function formalism in combination with Fourier transformation to the reciprocal space and an exact diagonalization technique. We have observed a splitting of Dirac points and appearance of edditional Dirac-like points due to the Rashba spin-orbit interaction. Breaking of the hexagonal symmetry of t…
Transition metal dichalcogenide monolayers such as MoSe2,MoS2 and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report spectrally sharp, spatially localized emission in monolayer MoSe2. We find this quantum dot like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial mapping shows a correlation between the location of emitters and the existence of wrinkles (strained regions) in the flake. We tune the emission properties in magnetic and electric fields applied perpendicular to the monolayer plane. We ex…
Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric str…
We study theoretically phonon-assisted relaxation processes in a system consisting of one or two electrons confined in two vertically stacked self-assembled quantum dots. The calculation is based on a k.p approximation for single particle wave functions in a strained self-assembled structure. From these, two-particle states are calculated by including the Coulomb interaction and the transition rates between the lowest energy eigenstates are derived. We take into account phonon couplings via deformation potential and piezoelectric interaction and show that they both can play a dominant role in …
Recent experiments reveal that a scanning tunneling microscopy (STM) probe tip can generate a highly localized strain field in a graphene drumhead, which in turn leads to pseudomagnetic fields in the graphene that can spatially confine graphene charge carriers in a way similar to a lithographically defined quantum dot (QD). While these experimental findings are intriguing, their further implementation in nanoelectronic devices hinges upon the knowledge of key underpinning parameters, which still remain elusive. In this paper, we first summarize the experimental measurements of the deformation …
Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular magnetic fields, and (most importantly for valley coupling) the small local tilt of the quantum well interface away from the crystallographic axes. In absence of a tilt, valley splitting occurs only between pairs of states with the same orbital quantum numbers. However, tilting is ubiquitous in conventional silicon heterostructures, leading to valley-orbit co…
Hanle effect is ubiquitous in the study of spin-related phenomena and has been used to determine spin lifetime, precession and transport in semiconductors. Here, we report an experimental observation of anomalous Hanle effect in individual self-assembled InAs/GaAs quantum dots where we find that a sizeable photo-created electron spin polarization can be maintained in transverse fields as high as 1T until it abruptly collapses. The striking broadening of the Hanle curve by a factor of ~20 and its bistability upon reversal of the magnetic sweep direction points to a novel dynamical nuclear spin …
Lattice matched GaAs/AlGaAs epitaxial structures with quantum dots are studied under static uniaxial stress applied either along the $[001]$ or $[110]$ crystal directions. We conduct simultaneous measurements of the spectral shifts in the photoluminescence of the bulk GaAs substrate, which relate to strain via deformation potentials $a$ and $b$, and the quadrupolar shifts in the optically detected nuclear magnetic resonance spectra of the quantum dots, which relate to the same strain via the gradient-elastic tensor $S_{ijkl}$. Measurements in two uniaxial stress configurations are used to deri…
Neutral excitons in strained axially symmetric In(Ga)As/GaAs quantum dots with ringlike shape are investigated. Similar to experimental self-assembled quantum rings, the analyzed quantum dots have volcano-like shapes. The continuum mechanical model is employed to determine the strain distribution, and the single-band envelope function approach is adopted to compute the electron states. The hole states are determined by the axially symmetric multiband Luttinger-Kohn Hamiltonian, and the exciton states are obtained from an exact diagonalization. We found that the presence of the inner layer cove…
We report on experimental studies of the effects induced by surface acoustic waves on the optical emission dynamics of GaN/InGaN nanowire quantum dots. We employ stroboscopic optical excitation with either time-integrated or time-resolved photoluminescence detection. In the absence of the acoustic wave, the emission spectra reveal signatures originated from the recombination of neutral exciton and biexciton confined in the probed nanowire quantum dot. When the nanowire is perturbed by the propagating acoustic wave, the embedded quantum dot is periodically strained and its excitonic transitions…
Theory of current hysteresis for tunneling through a molecular quantum dot (MQD) with strong electron-vibron interactions and attractive electron-electron correlations is developed. The dot is modeled as a d-fold degenerate energy level weakly coupled to the leads. The effective attractive interaction between polarons in the dot results in a "switching" phenomenon in the current-voltage characteristics when d>2, in agreement with the results for the phenomenological negative-U model. The degenerate MQD with strong electron-vibron coupling has two stable current states in certain interval of th…
We derive the transport properties of a quantum dot subject to a source-drain bias voltage at zero temperature and magnetic field. Using the Scattering Bethe Anstaz, a generalization of the traditional Thermodynamic Bethe Ansatz to open systems out of equilibrium, we derive exact results for the quantum dot occupation out of equilibrium and, by introducing phenomenological spin- and charge-fluctuation distribution functions in the computation of the current, obtain the differential conductance for large U/Γ. The Hamiltonian to describe the quantum dot system is the Anderson impurity Hamiltonia…
We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The relaxation times depend sensitively on system parameters such as the dot size and the external magnetic field. Generally, however, orbital relaxation times are short in strained silicon (from a tenth of a microsecond to picoseconds), spin relaxation times are long (microseconds to greater than seconds), while valley relaxation times are expected to lie in between…
We perform self-consistent quantum transport calculations in open quantum dots taking into account the effect of electron interaction. We demonstrative that in the regime of the ultralow temperatures $2πk_BT\lesssimΔ$ ($Δ$ being the mean level spacing), the electron interaction strongly affects the conductance oscillations and their statistics leading to a drastic deviation from the corresponding predictions for noninteracting electrons. In particular, it causes smearing of conductance oscillations, which is similar to the effect of temperature or inelastic scattering. For $2πk_BT\gtrsimΔ$ the…
Automated electrostatic characterization of quantum dot devices in single- and bilayer heterostructures
National Institute of Standards and Technology（美国国家标准技术研究院）；Joint Center for Quantum Information and Computer Science（量子信息与计算机科学联合中心）；University of Maryland（马里兰大学）；Kavli Institute of Nanoscience（卡弗里纳米科学研究所）；Netherlands Organisation for Applied Scientific Research（荷兰应用科学研究院）
We investigate coherent transport through open lateral quantum dots using recursive Green's function technique, incorporating exchange-correlation effects within local spin-density approximation (LSDA). At low electron densities the current is spin-polarized and electron density in the dot shows a strong spin polarization. As the electron density increases the spin polarization in the dot gradually diminishes. These findings are consistent with available experimental observations. Results of our LSDA-based modeling indicate that utilization of the simplified approaches that use phenomenologica…
Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up approaches are limited in size to a few nanometers. Fortunately, its mechanical flexibility raises the possibility of using strain to alter graphene's properties and create novel straintronic devices. Here, we report transport studies of nanowires created by linearly-shaped strained regions resulting from individual folds formed by layer transfer onto hexagonal…
We preform large-scale \emph{ab initio} density functional theory calculations to study the lattice strain and the vibrational properties of colloidal semiconductor core-shell nanoclusters with up to one thousand atoms (radii up to 15.6~Å). For all the group IV, III-V and II-VI semiconductors studied, we find that the atom positions of the shell atoms, seem unaffected by the core material. In particular, for group IV core-shell clusters the shell material remains unstrained, while the core adapts to the large lattice mismatch (compressive or tensile strain). For InAs-InP and CdSe-CdS, both the…
Mean-field evolution equations for the exciton and photon populations and polarizations (Bloch-Lamb equations) are written and numerically solved in order to describe the dynamics of electronic states in a quantum dot coupled to the photon field of a microcavity. The equations account for phase space filling effects and Coulomb interactions among carriers, and include also (in a phenomenological way) incoherent pumping of the quantum dot, photon losses through the microcavity mirrors, and electron-hole population decay due to spontaneous emission of the dot. When the dot may support more than …
Electron transport properties of few-electron open quantum dots within the spin-restricted Hartree-Fock approximation are studied. The self-consistent numerical calculations were performed for a whole device, including the semi-infinite leads, without employing any phenomenological or adjustable parameters. Inclusion of the non-local Fock potential brings qualitatively new physics in comparison to the Hartree approach: electron screening decreases, resonant energy levels become less pinned to the Fermi energy and clearly correlate with conductance peaks. When coupling between the dot and leads…
We report the implementation of the self-consistent Thomas-Fermi screening theory, together with the local Ohm's law to a quantum dot system in order to obtain local current distribution within the dot and at the leads. We consider a large dot (size $>700$ nm) defined by split gates, and coupled to the leads. Numerical calculations show that the non-dissipative current is confined to the incompressible strips. Due to the non-linear screening properties of the 2DES at low temperatures, this distribution is highly sensitive to external magnetic field. Our findings support the phenomenological mo…
The nuclear spins in nanostructured semiconductors play a central role in quantum applications. The nuclear spins represent a useful resource for generating local magnetic fields but nuclear spin noise represents a major source of dephasing for spin qubits. Controlling the nuclear spins enhances the resource while suppressing the noise. NMR techniques are challenging: the group III and V isotopes have large spins with widely different gyromagnetic ratios; in strained material there are large atom-dependent quadrupole shifts; and nanoscale NMR is hard to detect. We report NMR on 100,000 nuclear…
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11\times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the strained buried Ge channel at different depths of 12 and 44 nm from the surface. From the thermal damping of the amplitude of Shubnikov-de Haas oscillations, we measure a light mass of $0.061m_e$ at a density of $2.2\times10^{11}$ cm$^{-2}$. We confirm the theoretically predicted dependence of increasing mass with density and by extrapolation we find an effective…
Switchable spin-photon coupling with hole spins in single-quantum dots
Universidad Carlos III de Madrid（马德里卡洛斯三世大学）；Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC)（马德里材料科学研究所（ICMM），西班牙国家研究委员会（CSIC））
The optomechanical coupling of quantum dots and flexural mechanical modes is studied in suspended nanophononic strings. The investigated devices are designed and monolithically fabricated on an (Al)GaAs heterostructure. Radio frequency elastic waves with frequencies ranging between $f$=250 MHz to 400 MHz are generated as Rayleigh surface acoustic waves on the unpatterned substrate and injected as Lamb waves in the nanophononic string. Quantum dots inside the nanophononic string exhibit a 15-fold enhanced optomechanical modulation compared to those dynamically strained by the Rayleigh surface a…
