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arXiv 2007.10548cond-mat.mes-hallcond-mat.dis-nn
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二维轨道磁化无序的数值研究

Numerical Study of Disorder on the Orbital Magnetization in Two Dimensions

Si-Si Wang, Yan-Yang Zhang, Ji-Huan Guan, Yan Yu, Yang Xia, Shu-Shen Li

摘要:

现代轨道磁化理论是利用Wannier函数方法发展起来的,它具有与Berry相类似的形式。在这篇手稿中,我们进行了一个数值研究的命运OM无序,通过使用这种方法在二维Haldom模型,它可以调整之间的正常绝缘体或陈绝缘体在半填充。模拟了这两种情况下增加无序度对OM的影响。在弱无序区和拓扑平凡的情况下观察到能量重整化位移,这是由自洽T矩阵近似预测的。除此之外,还可以看到另外两个现象。一个是能带轨道磁化的局域化趋势。另一种是由非零的Chern数或大的积分Berry曲率引起的拓扑手征态的显著贡献。如果费米能固定在清洁系统的带隙中心,有一个增强的|M|在中间的无序,正常和陈绝缘体的情况下,这可以归因于在本地化之前的无序诱导的拓扑金属状态。

英文摘要:

The modern theory of orbital magnetization (OM) was developed by using Wannier function method, which has a formalism similar with the Berry phase. In this manuscript, we perform a numerical study on the fate of the OM under disorder, by using this method on the Haldane model in two dimensions, which can be tuned between a normal insulator or a Chern insulator at half filling. The effects of increasing disorder on OM for both cases are simulated. Energy renormalization shifts are observed in the weak disorder regime and topologically trivial case, which was predicted by a self-consistent T-matrix approximation. Besides this, two other phenomena can be seen. One is the localization trend of the band orbital magnetization. The other is the remarkable contribution from topological chiral states arising from nonzero Chern number or large value of integrated Berry curvature. If the fermi energy is fixed at the gap center of the clean system, there is an enhancement of |M| at the intermediate disorder, for both cases of normal and Chern insulators, which can be attributed to the disorder induced topological metal state before localization.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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