arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2007.01596cond-mat.mes-hall
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用广义边界条件量化金属/绝缘体混合结构中的界面自旋-电荷转换

Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions

Cristina Sanz-Fernández, Van Tuong Pham, Edurne Sagasta, Luis E. Hueso, Ilya V. Tokatly, Fèlix Casanova, F. Sebastián Bergeret

摘要:

我们提出并实验验证了一个通用的理论框架,用于描述在非磁性金属/绝缘体结构与界面自旋轨道耦合(ISOC)的自旋-电荷相互转换。我们的配方是基于漂移扩散方程补充广义边界条件。后者编码的ISOC的影响,并涉及在这样的系统中的电子输运的自旋损耗和自旋-电荷相互转换的接口,这是参数化,分别由$G_{\parallel/\perp}$和$σ_{\rm{sc/cs}}$。我们证明,转换效率仅取决于这些界面参数。我们将我们的形式主义,利用ISOC两个典型的自旋电子器件:横向自旋阀和多层霍尔酒吧,我们分别计算的非本地电阻和自旋霍尔磁阻。最后,我们对这两个设备与生物$_x$ /铜接口进行测量,并验证与ISOC相关的输运性质的量化由相同的一组界面参数。

英文摘要:

We present and verify experimentally a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin-orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such systems to spin loss and spin-charge interconversion at the interface, which are parameterized, respectively, by $G_{\parallel/\perp}$ and $σ_{\rm{sc/cs}}$. We demonstrate that the conversion efficiency depends solely on these interfacial parameters. We apply our formalism to two typical spintronic devices that exploit ISOC: a lateral spin valve and a multilayer Hall bar, for which we calculate the non-local resistance and the spin Hall magnetoresistance, respectively. Finally, we perform measurements on these two devices with a BiO$_x$/Cu interface and verify that transport properties related to the ISOC are quantified by the same set of interfacial parameters.

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