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arXiv 2007.00087physics.app-phcond-mat.mes-hall
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用3 $ω$方法测量负载薄膜材料的热导率

Thermal Conductivity Measurement of Supported Thin Film Materials Using the 3$ω$ method

Daxi Zhang, Amir Behbahanian, Nicholas A. Roberts

摘要:

在这篇文章中,我们提出了一个彻底的分析的十字架,并在平面导热系数的薄膜材料的基础上的3 $ω$方法。该分析包括半无限体的二维数学传热模型以及测量过程中样品制备的详细信息。所提出的系统的数学模型考虑了其解决方案的二维空间。它使跨平面热导率的计算与一个单一的频率测量,推导出的方程打开了新的机会,基于频率和渗透深度相关的热导率分析。导出的面内热导率方程取决于跨面热导率。平面内和跨平面的热导率都使得能够在两个测量步骤中进行测量,电阻-温度斜率测量和提取电压信号的第三谐波的另一组测量。我们评估了两组样品,氮化硅和氮化硼,都在硅晶片上的方法。我们观察到的各向异性的热导率在交叉和面内方向,尽管各向同性性质的薄膜,我们涉及到的总各向异性的薄膜-基板系统。该技术有助于下一代纳米电子器件的热分析。

英文摘要:

In this article, we are proposing a thorough analysis of the cross, and the in-plane thermal conductivity of thin-film materials based on the 3$ω$ method. The analysis accommodates a 2D mathematical heat transfer model of a semi-infinite body and the details of the sample preparation followed by the measurement process. The presented mathematical model for the system considers a two-dimensional space for its solution. It enables the calculation of the cross-plane thermal conductivity with a single frequency measurement, the derived equation opens new opportunities for frequency-based and penetration-depth dependent thermal conductivity analysis. The derived equation for the in-plane thermal conductivity is dependent on the cross-plane thermal conductivity. Both in and cross-plane thermal conductivities enable the measurements in two steps of measurements, the resistance-temperature slope measurement and another set of measures that extracts the third harmonic of the voltage signal. We evaluated the methodology in two sets of samples, silicon nitride and boron nitride, both on silicon wafers. We observed anisotropic thermal conductivity in the cross and the in-plane direction, despite the isotropic nature of the thin films, which we relate to the total anisotropy of the thin film-substrate system. The technique is conducive to the thermal analysis of next-generation nanoelectronic devices.

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