部分弛豫的200-nm HgTe薄膜中的弱反局域化
Weak antilocalization in partially relaxed 200-nm HgTe films
摘要：
实验研究了200 nm HgTe薄膜中弱反局域化效应引起的反常磁电阻效应。该薄膜是一种高质量的三维拓扑绝缘体，具有比以前研究的更薄的碲化汞结构更强的表面态空间分离。然而，在对比的薄膜，所研究的系统的特点是由一个减少的部分应变导致的体积能隙几乎为零。它已被证明，在费米能级的所有位置的系统表现出WAL电导率校正叠加在经典的抛物型磁阻。由于载流子的高迁移率，使用弹道WAL理论对所获得的结果进行分析。WAL电导率校正幅度的最大值被发现在费米能级的位置附近的体能隙表明在这些条件下的表面载流子的完全去耦。当体电子或空穴密度增加时，WAL振幅单调减小，这是由于表面载流子和体载流子之间的耦合增加。
英文摘要：
The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain resulting in an almost zero bulk energy gap. It has been shown that at all positions of the Fermi level the system exhibits a WAL conductivity correction superimposed on classical parabolic magnetoresistance. Since high mobility of carriers, the analysis of the obtained results was performed using a ballistic WAL theory. The maximum of the WAL conductivity correction amplitude was found at a Fermi level position near the bulk energy gap indicating to full decoupling of the surface carriers in these conditions. The WAL amplitude monotonously decreases when the density of either bulk electrons or holes increases that results from the increasing coupling between surface and bulk carriers.
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