HgTe丝中的一维弱反定域和带Berry相
One-dimensional weak antilocalization and band Berry phases in HgTe wires
摘要：
研究了在正常和反转带序量子阱中制备的碲化汞窄线的磁电阻效应中的弱反定域效应。在不同的栅极电压下的测量结果表明，WAL仅受Rashba自旋轨道分裂的微弱影响，并在Rashba分裂约为零时持续存在。具有正常频带排序的导线中的WAL信号比反转的导线小一个数量级。这些观测结果归因于碲化汞量子阱中的能带的Dirac拓扑结构。从磁场和温度的依赖关系，我们提取的退相长度和带贝里相位。对于具有正常能带结构的样品，较弱的WAL可以用总是超过π的非普适Berry相位来解释，π是无带隙狄拉克费米子的特征值。
英文摘要：
We study the weak antilocalization (WAL) effect in the magnetoresistance of narrow HgTe wires fabricated in quantum wells (QWs) with normal and inverted band ordering. Measurements at different gate voltages indicate that the WAL is only weakly affected by Rashba spin-orbit splitting and persists when the Rashba splitting is about zero. The WAL signal in wires with normal band ordering is an order of magnitude smaller than for inverted ones. These observations are attributed to a Dirac-like topology of the energy bands in HgTe QWs. From the magnetic-field and temperature dependencies we extract the dephasing lengths and band Berry phases. The weaker WAL for samples with a normal band structure can be explained by a non-universal Berry phase which always exceeds π, the characteristic value for gapless Dirac fermions.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
