石墨烯上大面积电沉积少层MoS2制备二维材料异质结构
Large-Area Electrodeposition of Few-Layer MoS2 on Graphene for 2D Material Heterostructures
摘要：
涉及二维（2D）过渡金属二硫属化物和诸如石墨烯的其他材料的异质结构具有成为许多电子和光电应用的基本构建块的强大潜力。这种异质结构的集成和可扩展制造对于释放这些材料在新技术中的潜力至关重要。我们首次在石墨烯上通过非水溶液电沉积制备了多层二硫化钼薄膜。通过扫描和透射电子显微镜、原子力显微镜、拉曼光谱、能量和波长色散X射线光谱以及X射线光电子能谱学等方法，我们表明这种沉积方法可以在石墨烯上制备出高质量、均匀的大面积MoS2薄膜。我们揭示了这些异质结构的潜力，通过测量薄膜的光感应电流。这些结果为发展电沉积方法大规模生长由多种二维材料组成的异质结构铺平了道路。
英文摘要：
Heterostructures involving two-dimensional (2D) transition metal dichalcogenides and other materials such as graphene have a strong potential to be the fundamental building block of many electronic and opto-electronic applications. The integration and scalable fabrication of such heterostructures is of essence in unleashing the potential of these materials in new technologies. For the first time, we demonstrate the growth of few-layer MoS2 films on graphene via non-aqueous electrodeposition. Through methods such as scanning and transmission electron microscopy, atomic force microscopy, Raman spectroscopy, energy and wavelength dispersive X-ray spectroscopies and X-ray photoelectron spectroscopy, we show that this deposition method can produce large-area MoS2 films with high quality and uniformity over graphene. We reveal the potential of these heterostructures by measuring the photo-induced current through the film. These results pave the way towards developing the electrodeposition method for the large-scale growth of heterostructures consisting of varying 2D materials for many applications.
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