A detailed understanding of interacting electrons in twisted bilayer graphene (tBLG) near the magic angle is required to gain insights into the physical origin of the observed broken symmetry phases. Here, we present extensive atomistic Hartree theory calculations of the electronic properties of tBLG in the (semi-)metallic phase as function of doping and twist angle. Specifically, we calculate quasiparticle properties, such as the band structure, density of states (DOS) and local density of states (LDOS), which are directly accessible in photoemission and tunnelling spectroscopy experiments. We find that quasiparticle properties change significantly upon doping - an effect which is not captured by tight-binding theory. In particular, we observe that the partially occupied bands flatten significantly which enhances the density of states at the Fermi level. We predict a clear signature of this band flattening in the LDOS in the AB/BA regions of tBLG which can be tested in scanning tunneling experiments. We also study the dependence of quasiparticle properties on the dielectric environment of tBLG and discover that these properties are surprisingly robust as a consequence of the strong internal screening. Finally, we present a simple analytical expression for the Hartree potential which enables the determination of quasiparticle properties without the need for self-consistent calculations.
We calculate the form of quasiparticle interference patterns in bilayer graphene within a low-energy description, taking into account perturbatively the trigonal warping terms. We introduce four different types of impurities localized on the A and B sublattices of the first and the second layer, and we obtain closed-form analytical expressions both in real and Fourier spaces for the oscillatory corrections to the local density of states generated by the impurities. Finally, we compare our findings with recent experimental and semi-analytical T-matrix results from arXiv:2104.10620 and we show t…
Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL)（洛桑联邦理工学院物理研究所）；International Center for Materials Nanoarchitectonics, National Institute for Materials Science（国家材料科学研究所纳米材料国际中心）；Center for Quantum Science and Engineering (QSE Center), École Polytechnique Fédérale de Lausanne (EPFL)（洛桑联邦理工学院量子科学与工程中心）
The effects of the long range electrostatic interaction in twisted bilayer graphene are described using the Hartree-Fock approximation. The results show a significant dependence of the band widths and shapes on electron filling, and the existence of broken symmetry phases at many densities, either valley/spin polarized, with broken sublattice symmetry, or both.
Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle $\approx 1.08^{\circ}$ hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity and magnetism. Here we report combined temperature-dependent transport measurements of the longitudinal and Hall resistivities in close to magic-angle TBG. While the observed longitudinal resistivity follows linear temperature $T$ dependence consistent with previous reports, the Hall resistance shows an anomalous $T$ dependence with the cotangent of the Hall angle cot $Θ{_H} \propto T^2$. Boltzm…
Effects of Electron Form Factor on Quasiparticle Interference in Twisted Bilayer Graphene
Donostia International Physics Center（多诺斯蒂亚国际物理中心）；Advanced Polymers and Materials: Physics, Chemistry and Technology, Chemistry Faculty (UPV/EHU)（巴斯克国立大学/阿尔卡拉大学（UPV/EHU）化学学院先进聚合物与材料：物理、化学与技术）；IMDEA Nanoscience（IMDEA纳米科学研究所）；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯科，巴斯克科学基金会）
The occurrence of superconducting and insulating phases is well-established in twisted graphene bilayers, and they have also been reported in other arrangements of graphene layers. We investigate three such arrangements: untwisted AB bilayer graphene on an hBN substrate, two graphene bilayers twisted with respect to each other, and a single ABC stacked graphene trilayer on an hBN substrate. Narrow bands with different topology occur in all cases, producing a high density of states which enhances the role of interactions. We investigate the effect of the long range Coulomb interaction, treated …
We propose a method for studying the strong interaction regimes in twisted bilayer graphene using hybrid Wannier functions, that are Wannier-like in one direction and Bloch-like in the other. We focus on the active bands as given by the continuum model proposed by Bistritzer and MacDonald, and discuss the properties of corresponding hybrid Wannier functions. We then employ the method for a study of the fillings of $\pm 3$ electrons per moiré cell using the Hartree-Fock method. We discuss at length different regimes under which a quantized anomalous Hall effect is seen in these two fillings.
Near a magic twist angle, the lowest energy conduction and valence bands of bilayer graphene moiré superlattices become extremely narrow. The band dispersion that remains is sensitive to the moiré's strain pattern, nonlocal tunneling between layers, and filling-factor dependent Hartree and exchange band renormalizations. In this article we analyze the influence of these band-structure details on the pattern of flavor-symmetry-breaking observed in this narrow band system, and on the associated pattern of Fermi surface reconstructions revealed by weak-field-Hall and Schubnikov-de Haas magneto-tr…
We consider magic-angle twisted bilayer graphene (TBG) at filling $ν=+3$, where experiments have observed a robust quantized anomalous Hall effect. This has been attributed to the formation of a valley- and spin-polarized Chern insulating ground state that spontaneously breaks time-reversal symmetry, and is stabilized by a hexagonal boron nitride (hBN) substrate. We identify three different types of domain wall, and study their properties and energetic selection mechanisms via theoretical arguments and Hartree-Fock calculations adapted to deal with inhomogeneous moiré systems. We comment on th…
Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi$_2$Se$_3$
用低温傅里叶变换扫描隧道谱研究了Bi $_2$ Se $_3$上铋双层膜的能带结构、带内和带间电子散射过程。所观察到的复杂的准粒子干涉图案进行比较的自旋相关的联合态密度的方法使用的表面局域化的光谱函数作为唯一的输入计算的基础上的模拟的第一原理。因此，准粒子干扰的起源可以追溯到铋双层价带和Bi $_2$ Se $_3$导带中的带内散射，以及二维拓扑态和铋双层价带之间的带间散射。研究表明，双层的带隙，这是预测主机的双层边缘的一维拓扑状态，被推到费米能级以上几百个毫电子伏。该结果通过从双层到Bi $_2$ Se $_3$的电子转移来合理化，该电子转移还导致具有强Rashba自旋分裂的Bi $_2$ Se $_3$导带中的二维电子状态，与拓扑状态和双层价带共存。
