Bulk valley transport and Berry curvature spreading at the edge of flat bands
Subhajit Sinha, Pratap Chandra Adak, R. S. Surya Kanthi, Bheema Lingam Chittari, L. D. Varma Sangani, Kenji Watanabe, Takashi Taniguchi, Jeil Jung, Mandar M. Deshmukh
2D materials based superlattices have emerged as a promising platform to modulate band structure and its symmetries. In particular, moiré periodicity in twisted graphene systems produces flat Chern bands. The recent observation of anomalous Hall effect (AHE) and orbital magnetism in twisted bilayer graphene has been associated with spontaneous symmetry breaking of such Chern bands. However, the valley Hall state as a precursor of AHE state, when time-reversal symmetry is still protected, has not been observed. Our work probes this precursor state using the valley Hall effect. We show that broken inversion symmetry in twisted double bilayer graphene (TDBG) facilitates the generation of bulk valley current by reporting the first experimental evidence of nonlocal transport in a nearly flat band system. Despite the spread of Berry curvature hotspots and reduced quasiparticle velocities of the carriers in these flat bands, we observe large nonlocal voltage several micrometers away from the charge current path -- this persists when the Fermi energy lies inside a gap with large Berry curvature. The high sensitivity of the nonlocal voltage to gate tunable carrier density and gap modulating perpendicular electric field makes TDBG an attractive platform for valley-twistronics based on flat bands.
Berry phase plays an important role in determining many physical properties of quantum systems. However, a Berry phase altering energy spectrum of a quantum system is comparatively rare. Here, we report an unusual tunable valley polarized energy spectra induced by continuously tunable Berry phase in Bernal-stacked bilayer graphene quantum dots. In our experiment, the Berry phase of electron orbital states is continuously tuned from about pi to 2pi by perpendicular magnetic fields. When the Berry phase equals pi or 2pi, the electron states in the two inequivalent valleys are energetically degen…
Since its discovery, Berry phase has been demonstrated to play an important role in many quantum systems. In gapped Bernal bilayer graphene, the Berry phase can be continuously tuned from zero to 2pi, which offers a unique opportunity to explore the tunable Berry phase on the physical phenomena. Here, we report experimental observation of Berry phases-induced valley splitting and crossing in moveable bilayer graphene p-n junction resonators. In our experiment, the bilayer graphene resonators are generated by combining the electric field of scanning tunneling microscope tip with the gap of bila…
Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a resu…
The topological quantum states in two-dimensional (2D) materials are fascinating subjects of research, which usually highlight electron-related systems. In this work, we present a recipe that leads to Dirac phonon states with quantized valley Berry phase in 2D hexagonal lattices by first-principles calculations. We show that candidates possessing the three-fold rotational symmetry at the corners of the hexagonal Brillouin zone host valley Dirac phonons, which are guaranteed to remain intact with respect to perturbations. We identify that such special topological features populated by Dirac pho…
The Berry-phase mediated valley-selected skew scattering in alpha-T3 lattices is demonstrated. The interplay of Lorentz and Berry forces in position and momentum spaces is revealed and analyzed. Many-body screening of the electron-impurity interaction is taken into account to avoid overestimation of back- and skew-scattering of electrons in the system. Triplet peak from skew interactions at two valleys is found in near-vertical and near-horizontal forward- and backward-scattering directions for small Berry phases and low magnetic fields. Magnetic-field dependence in both non-equilibrium and th…
The Berry curvature dipole is a physical quantity that is expected to allow various quantum geometrical phenomena in a range of solid-state systems. Monolayer transition metal dichalcogenides provide an exceptional platform to modulate and investigate the Berry curvature dipole through strain. Here we theoretically demonstrate and experimentally verify for monolayer MoS$_\rm{2}$ the generation of valley orbital magnetization as a response to an in-plane electric field due to the Berry curvature dipole. The measured valley orbital magnetization shows excellent agreement with the calculated Berr…
Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to electrically control broken inversion symmetry or Berry curvature as well as the carrier density to generate and detect the pure valley current. We find a large nonlocal resistance and a cubic scaling between the nonlocal resistance and the local resistivity in the insulating regime at zero-magnetic field and 70 K as evidence of the pure valley current. The ele…
The Berry phase of Bloch states can have profound effects on electron dynamics lead to novel transport phenomena, such as the anomalous Hall effect and the valley Hall effect. Recently, it was predicted that the Berry phase effect can also modify the exciton states in transition metal dichalcogenide monolayers, and lift the energy degeneracy of exciton states with opposite angular momentum through an effective valley-orbital coupling. Here, we report the first observation and control of the Berry-phase induced splitting of the 2p-exciton states in monolayer molybdenum diselenide using the intr…
The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer TMDCs, both intra-layer and inter-layer couplings give important contributions to the Berry-curvature in the $K$ and $-K$ valleys of the Brillouin zone. The inter-layer contribution leads to the stacking dependence of the Berry curvature and we point out the differences between the commonly available 3R type and 2H type bilayers. Due to the inter-layer contribu…
Inversion symmetry breaking and spin-orbit coupling lead to valley and spin Hall effect in MoS2. Because of the large valley separation in momentum space, the valley index is expected to be robust. In this paper, quantum Hall effect in MoS2 originated from Berry curvature is analyzed after review of symmetry structure and spin-orbit coupling Hamiltonian of MoS2. Finally an expression and rough calculation is given for valley and spin Hall effect.
Real magnetic and lattice deformation gauge fields have been investigated in honeycomb lattice of graphene. The coexistence of these two gauges will induce a gap difference between two valley points ($K$ and $K'$) of system. This gap difference allows us to study the possible topological valley Hall current and valley polarization in the graphene sheet. In the absence of magnetic field, the strain alone could not generate a valley polarization when the Fermi energy coincides exactly with the Dirac points. Since in this case there is not any imbalance between the population of the valley points…
We consider the anomalous thermoelectric transport in gapped single and bilayer graphene where the gap may be due to broken inversion symmetry. In the presence of the gap, non-trivial Berry phase effects can be shown to mediate a transverse thermoelectric voltage in response to an applied temperature gradient even in the absence of a perpendicular magnetic field. This spontaneous, anomalous Nernst effect is nonzero for non-uniform chemical potential in the two inequivalent valleys in the graphene band structure. Conversely, the Nernst response can be used to create a valley-index polarization …
The electronic topology is generally related to the Berry curvature, which can induce the anomalous Hall effect in time-reversal symmetry breaking systems. Intrinsic monolayer transition metal dichalcogenides possesses two nonequivalent K and K' valleys, having Berry curvatures with opposite signs, and thus vanishing anomalous Hall effect in this system. Here we report the experimental realization of asymmetrical distribution of Berry curvature in a single valley in monolayer WSe2 through applying uniaxial strain to break C3v symmetry. As a result, although the Berry curvature itself is still …
Chiral quasiparticles in Bernal-stacked bilayer graphene have valley-contrasting Berry phases of 2π. This nontrival topological structure, associated with the pseudospin winding along a closed Fermi surface, is responsible for various novel electronic properties, such as anti-Klein tunneling, unconventional quantum Hall effect, and valley Hall effect1-6. Here we show that the quantum interference due to intervalley scattering induced by atomic defects/impurities provides further insights into the topological nature of the bilayer graphene. The scattered chiral quasiparticles between distinct v…
In transition-metal dichalcogenides, electrons in the K-valleys can experience both Ising and Rashba spin-orbit couplings. In this work, we show that the coexistence of Ising and Rashba spin-orbit couplings leads to a special type of valley Hall effect, which we call spin-orbit coupling induced valley Hall effect. Importantly, near the conduction band edge, the valley-dependent Berry curvatures generated by spin-orbit couplings are highly tunable by external gates and dominate over the intrinsic Berry curvatures originating from orbital degrees of freedom under accessible experimental conditio…
We demonstrate that dislocations in the graphene lattice give rise to electron Berry phases equivalent to quantized values {0,1/3,-1/3} in units of the flux quantum, but with an opposite sign for the two valleys. An elementary scale consideration of a graphene Aharonov-Bohm ring equipped with valley filters on both terminals, encircling a dislocation, says that in the regime where the intervalley mean free path is large compared to the intravalley phase coherence length, such that the valley quantum numbers can be regarded as conserved on the relevant scale, the coherent valley-polarized curre…
We point out a practical way to induce a finite charge Hall conductivity in graphene via an off-diagonal strain. Our conclusions are based on a general analysis and supported by numerical examples. The interplay between a substrate-induced gap and the strain is discussed. We show that the substrate-induced gap itself does not break the symmetry that maps one valley onto the other, and hence does not yield a net charge Hall effect. The net charge Hall conductivity is found to be sizable and should be observable in the presence of both the gap and the strain. The sign of the Hall conductivity ca…
A valley-contrasting Berry curvature in bilayer transition metal dichalcogenides with spin-orbit coupling can generate valley magnetization when the inversion symmetry is broken, for example, by an electric field, regardless of time-reversal symmetry. A nontrivial Berry curvature can also lead to anomalous transport responses, such as the anomalous Hall effect and the anomalous Nernst effect. Applied to a bilayer WSe$_2$, an electric field can tune the Berry curvature and orbital magnetic moment, which has important consequences for the orbital magnetization and the anomalous Nernst responses.…
In the presence of external magnetic field the Fermi-liquid state supports oscillatory spin modes known as Silin modes. We predict the existence of the generalized Silin modes in a multivalley system, monolayer graphene. A gauge- and Berry-gauge- invariant kinetic equation for a multivalley Fermi liquid is developed and applied to the case of graphene with extrinsic spin-orbit coupling (SOC). The interplay of SOC and Berry curvature allows for the excitation of generalized Silin modes in the spin and valley-staggered-spin channels via an AC electric field. The resonant contributions from these…
Electrons in certain two-dimensional crystals possess a pseudospin degree of freedom associated with the existence of two inequivalent valleys in the Brillouin zone. If, as in monolayer MoS2, inversion symmetry is broken and time-reversal symmetry is present, equal and opposite amounts of k-space Berry curvature accumulate in each of the two valleys. This is conveniently quantified by the integral of the Berry curvature over a single valley - the valley Hall conductivity. We generalize this definition to include contributions from disorder described with the supercell approach, by mapping ("un…
The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion symmetry, the nonzero Berry curvature results in a valley Hall effect. In this paper we identify a previously unrecognized consequence of Berry curvature in these materials: an electric field-induced change in the electrons' charge density orientation. We use first principles calculations to show that measurements of the electric field-induced change in the …
In the present paper we have directly computed the Berry curvature terms relevant for Graphene in the presence of an \textit{inhomogeneous} lattice distortion. We have employed the generalized Foldy Wouthuysen framework, developed by some of us \cite{ber0,ber1,ber2}. We show that a non-constant lattice distortion leads to a valley-orbit coupling which is responsible to a valley-Hall effect. This is similar to the valley-Hall effect induced by an electric field proposed in \cite{niu2} and is the analogue of the spin-Hall effect in semiconductors \cite{MURAKAMI, SINOVA}. Our general expressions …
Recently, the topological flat bands and spin Hall effect have been experimentally observed in the AB-stacked MoTe$_2$/WSe$_2$ heterostructures. In this work, we systematically study the Berry curvature effects in moiré transition metal dichalcogenide (TMD) heterobilayers. We point out that the moiré potential of the remote conduction bands would induce a sizable periodic pseudo-magnetic field (PMF) on the valence band. This periodic PMF creates net Berry curvature flux in each valley of the moiré Brillouin zone. The combination of the effect of the Berry curvature and the spin-valley locking …
Inversion symmetry breaking allows contrasted circular dichroism in different k-space regions, which takes the extreme form of optical selection rules for interband transitions at high symmetry points. In materials where band-edges occur at noncentral valleys, this enables valley dependent interplay of electrons with light of different circular polarizations, in analogy to spin dependent optical activities in semiconductors. This discovery is in perfect harmony with the previous finding of valley contrasted Bloch band features of orbital magnetic moment and Berry curvatures from inversion symm…
We study spin-orbit torques in two dimensional hexagonal crystals such as graphene, silicene, germanene and stanene. The torque possesses two components, a field-like term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-$k$ space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100\% by tuning the bias voltage or mag…
We explore the transport properties of a periodically modulated $α$-$\mathcal{T}_3$ lattice in the presence of a perpendicular magnetic field. The effect of the Berry phase on electrical conductivity oscillation, so-called Weiss oscillation, caused by the modulation induced non-zero drift velocity of charge carriers is investigated. Employing linear response theory within the low temperature regime, we analyze Weiss oscillation as a function of the external magnetic field for both electrically and magnetically modulated $α$-$\mathcal{T}_3$ lattice numerically as well as analytically. The Berry…
We consider $α$-$T_3$ lattice illuminated by intense circularly polarized radiation in terahertz regime. We present quasienergy band structure, time-averaged energy spectrum and time-averaged density of states of $α$-$T_3$ lattice by solving the Floquet Hamiltonian numerically. We obtain exact analytical expressions of the quasienergies at the Dirac points for all values of $α$ and field strength. We find that the quasienergy band gaps at the Dirac point decrease with increase of $α$. Approximate forms of quasienergy and band gaps at single and multi-photon resonant points are derived using ro…
We consider Berry phase mediated Nernst effect in silicene. The low energy band structure of silicene consists of two valleys near the Dirac points, similar to graphene. The low energy transport properties of the quasiparticles can be described as Berry phase dependent phenomena. By contrast to graphene, silicene has strong spin-orbit interaction leading to opening of the gap in the energy spectrum and spin-splitting of the bands in each valley. If an electric field is applied perpendicular to the silicene sheet, it allows tunability of the gap. \ We show that this results in Berry-phase-suppo…
Berry curvature is analogous to magnetic field but in momentum space and is commonly present in materials with non-trivial quantum geometry. It endows Bloch electrons with transverse anomalous velocities to produce Hall-like currents even in the absence of a magnetic field. We report the direct observation of in situ tunable valley-selective Hall effect (VSHE), where inversion symmetry, and thus the geometric phase of electrons, is controllable by an out-of-plane electric field. We use high-quality bilayer graphene with an intrinsic and tunable bandgap, illuminated by circularly polarized mid-…
Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain 2D electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In principle, this offers the remarkable possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control. Here we demons…
We investigate physical properties that can be used to distinguish the valley degree of freedom in systems where inversion symmetry is broken, using graphene systems as examples. We show that the pseudospin associated with the valley index of carriers has an intrinsic magnetic moment, in close analogy with the Bohr magneton for the electron spin. There is also a valley dependent Berry phase effect that can result in a valley contrasting Hall transport, with carriers in different valleys turning into opposite directions transverse to an in-plane electric field. These effects can be used to gene…
Charge carriers in magic angle graphene come in eight flavors described by a combination of their spin, valley, and sublattice polarizations. When the inversion and time reversal symmetries are broken by the substrate or by strong interactions, the degeneracy of the flavors can be lifted and their corresponding bands can be filled sequentially. Due to their non-trivial band topology and Berry curvature, each of the bands is classified by a topological Chern number, leading to the quantum anomalous Hall and Chern insulator states at integer fillings $ν$ of the bands. It has been recently predic…
We provide a critical discussion concerning the claim of topological valley currents, driven by a global Berry curvature and valley Hall effect proposed in recent literature. After pointing out a major inconsistency of the theoretical scenario proposed to interpret giant nonlocal resistance, we discuss various possible alternative explanations and open directions of research to solve the mystery of nonlocal transport in graphene superlattices.
We study the magnetic and transport properties of epitaxial graphene films in this letter. We predict enhanced signal of magnetic susceptibility and relate it to the intrinsic valley magnetic moments. There is also an anomalous contribution to the ordinary Hall effect, which is due to the valley dependent Berry phase or valley-orbit coupling.
The possibility to engineer the coupling of spin and valley physics is explored in ferroelectric oxide heterostructures with eg electronic configuration. We show that the polar structural distortion induces the appearance of spin-valley coupled properties, at the same time being responsible for a topological transition from a quantum spin-Hall insulating phase to a trivial band insulator. The coupled spin-valley physics is affected by the topological band inversion in a non-trivial way; while the valley-dependent spin polarization of both conduction and valence bands is preserved, a change of …
High-order terahertz (THz) sideband generation (HSG) in semiconductors is a phenomenon with physics similar to high-order harmonic generation but in a much lower frequency regime. It was found that the electron-hole pairs excited by a weak optical laser can accumulate Berry phases along a cyclic path under the driving of a strong THz field. The Berry phases appear as the Faraday rotation angles of the emission signal under short-pulse excitation in monolayer MoS$_2$. In this paper, the theory of Berry phase in THz extreme nonlinear optics is applied to biased bilayer graphene with Bernal stack…
In this work, we calculate the optical response and the nonlinear Hall response of twisted bilayer graphene (TBG) in the insulating states. Different insulating states, including spin-valley polarized (SPVP) state, spin-polarized quantum Hall(SPQH) state, spin-polarized valley Hall (SPVH) state, and spin polarized Kramers-intervalley coherence (SPKIVC) state, are considered. We calculate the optical conductivity ($σ_{xx}$) of these four states and we find that the spin-valley polarized state shows a two-peak feature which is different from the other three states. In order to distinguish the ot…
The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized light, interband transitions generate an unbalanced non-equilibrium population of electrons and holes in these valleys, resulting in a finite Hall voltage at zero magnetic field when a current flows through the system. This is the so-called valley Hall effect that has recently been observed experimentally. Here, we show that this effect is mediated by photo-ge…
Based on DFT+U and Berry curvature calculations, we study the electronic structures and topological properties of 3d transition metal (TM) atom (from Ti to Co) adsorbed germanene (TM-germanene). We find that valley-polarized anomalous hall effect (VAHE) can be realized in germanene by adsorbing Cr, Mn, or Co atom on its surface. A finite valley hall voltage can be easily detected in its nanoribbon, which is important for valleytronics devices. Moreover, different valley-polarized current and even reversible valley Hall voltage can be archived by shifting the Fermi energy of the systems. Such v…
We study valley-dependent spin transport theoretically in monolayer transition-metal dichalcogenides in which a variety of spin and valley physics are expected because of spin-valley coupling. The results show that the spins are valley-selectively excited with appropriate carrier doping and valley polarized spin current (VPSC) is generated. The VPSC leads to the spin-current Hall effect, transverse spin accumulation originating from the Berry curvature in momentum space. The results indicate that spin excitations with spin-valley coupling lead to both valley and spin transport, which is promis…
We show that the spectrum of subbands in an electrostatically defined quantum wire in gapped bilayer graphene directly manifests the minivalley structure and reflects Berry curvature via the associated magnetic moment of the states in the low-energy bands of this two-dimensional material. We demonstrate how these appear in degeneracies of the low-energy minibands and their valley splitting, which develops linearly in a weak magnetic field. Consequently, magneto-conductance of a ballistic point contact connecting two non-gapped areas of a bilayer through a gapped (top and bottom gated) barrier …
We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of Berry curvature and topological charge, the QSVHK states are found to be topologically protected by the valley-inversion and time-reversal symmetries. Remarkably, the conductance of QSVHK states remains quantized against either nonmagnetic or long-range magnetic disorder, verified by the Green function calculations. Based on first-principles results, we show …
