A Molecular Approach for Engineering Interfacial Interactions in Magnetic-Topological Insulator Heterostructures
Marc G. Cuxart, Miguel Angel Valbuena, Roberto Robles, César Moreno, Frédéric Bonell, Guillaume Sauthier, Inhar Imaz, Heng Xu, Corneliu Nistor, Alessandro Barla… 展开作者
Marc G. Cuxart, Miguel Angel Valbuena, Roberto Robles, César Moreno, Frédéric Bonell, Guillaume Sauthier, Inhar Imaz, Heng Xu, Corneliu Nistor, Alessandro Barla, Pierluigi Gargiani, Manuel Valvidares, Daniel Maspoch, Pietro Gambardella, Sergio O. Valenzuela, Aitor Mugarza
Controlling interfacial interactions in magnetic/topological insulator heterostructures is a major challenge for the emergence of novel spin-dependent electronic phenomena. As for any rational design of heterostructures that rely on proximity effects, one should ideally retain the overall properties of each component while tuning interactions at the interface. However, in most inorganic interfaces interactions are too strong, consequently perturbing, and even quenching, both the magnetic moment and the topological surface states at each side of the interface. Here we show that these properties can be preserved by using ligand chemistry to tune the interaction of magnetic ions with the surface states. By depositing Co-based porphyrin and phthalocyanine monolayers on the surface of Bi$_2$Te$_3$ thin films, robust interfaces are formed that preserve undoped topological surface states as well as the pristine magnetic moment of the divalent Co ions. The selected ligands allow us to tune the interfacial hybridization within this weak interaction regime. These results, which are in stark contrast with the observed suppression of the surface state at the first quintuple layer of Bi$_2$Se$_3$ induced by the interaction with Co phthalocyanines, demonstrate the capability of planar metal-organic molecules to span interactions from the strong to the weak limit.
We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined optothermal Raman techniques, and reveal very high interfacial thermal conductance between hBN and MoS2. By studying the Raman shift of hBN and MoS2 in suspended and substrate-supported thin films under varying laser power and temperature, we calibrate lateral (in-plane) thermal conductivity of hBN and MoS2 and the vertical interfacial thermal conductance in the hBN/MoS2/hBN heterostructure as well as the interfaces b…
Integration of two-dimensional (2D) van der Waals (vdWs) materials with non-2D materials to realize mixed-dimensional heterostructures has potential for creating functional devices beyond the reach of existing materials and has long been a pursuit of the material science community. Here we report the patterning of monolayer/bilayer transition metal dichalcogenide (TMD) nanostructures with nanometer-precision, tunable sizes and sites at interfaces of graphene/TMD heterostructures. Our experiments demonstrate that the TMD nanostructures can be created at selected positions of the interface using…
Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe due to the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltage dependant conductance decay rate is also observed. We relate these obs…
Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration…
Two-dimensional transition metal dichalcogenides (MX2)/metal oxide heterostructures have shown unique physical properties, making them promising materials for various applications ranging from photocatalysis to solar energy conversion. Understanding the interfacial interactions is highly desirable for designing these heterostructures having excellent performance. Here we systematically study the interfacial interaction in monolayer MX2 (M=Mo, W; X=S, Se)/CeO2 heterostructures and its effects on electronic and optical properties by density functional theory. It is found that the interfacial int…
Combining both vertical and in-plane two-dimensional (2D) heterostructures opens up the possibility to create an unprecedented architecture using 2D atomic layer building blocks. The thermal transport properties of such mixed heterostructures, critical to various applications in nanoelectronics, however, have not been thoroughly explored. Herein, we construct two configurations of multilayer in-plane graphene/hexagonal boron nitride (Gr/h-BN) heterostructures (i.e. mixed heterostructures) via weak van der Waals (vdW) interactions and systematically investigate the dependence of their interfaci…
Stabilizing Magnetic Bubble Domains in Epitaxial 2D Magnet/Topological Insulator Heterostructures through Interfacial Interactions
University of Southern California（南加州大学）；University of South Florida（南佛罗里达大学）；The Ohio State University（俄亥俄州立大学）；Max Planck Institute for Solid State Research（马克斯·普朗克固体研究所）；Helmholtz-Zentrum Berlin für Materialien und Energie（柏林赫尔姆霍兹材料能源中心）
Magnetic complex-oxide heterostructures are of keen interest because a wealth of phenomena at the interface of dissimilar materials can give rise to fundamentally new physics and potentially valuable functionalities. Altered magnetization, novel magnetic coupling and emergent interfacial magnetism at the epitaxial layered-oxide interfaces are under intensive investigation, which shapes our understanding on how to utilize those materials, particularly for spintronics. Neutron and x-ray based techniques have played a decisive role in characterizing interfacial magnetic structures and clarifying …
Hybrid materials of MXenes (2D carbides and nitrides) and transition-metal oxides (TMOs) have shown great promise in electrical energy storage and 2D heterostructures have been proposed as the next-generation electrode materials to expand the limits of current technology. Here we use first principles density functional theory to investigate the interfacial structure, energetics, and electronic properties of the heterostructures of MXenes (Tin+1CnT2; T=terminal groups) and anatase TiO2. We find that the greatest work-function differences are between OH-terminated-MXene (1.6 eV) and anatase TiO2…
Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties of sputter-deposited TI/FM, Bi2Te3/Ni80Fe20, heterostructures is reported. Ni and a smaller amount of Fe from Py was found to diffuse across the interface and react with Bi2Te3. For highly crystalline c-axis oriented Bi2Te3 films, a giant enhancement in Gilbert damping is observed, accompanied by an effective out-of-plane magnetic anisotropy and enhanced damp…
The interfacial Dzyaloshinskii Moriya Interaction (DMI) in ultrathin magnetic thin film heterostructures provides a new approach for controlling spin textures on mesoscopic length scales. Here we investigate the dependence of the interfacial DMI constant D on a Pt wedge insertion layer in Ta_CoFeB_Pt(wedge)_MgO thin films by observing the asymmetric spin wave dispersion using Brillouin light scattering. Continuous tuning of D by more than a factor of three is realized by inserting less than one monolayer of Pt. The observations provide new insights for designing magnetic thin film heterostruct…
Ferroelectric switching of interfacial dipoles in $α$-RuCl$_3$/graphene heterostructure
Daegu Gyeongbuk Institute of Science and Technology (DGIST)（大邱庆北科学技术院）；Pohang University of Science and Technology（浦项科技大学）；Institute for Basic Science（基础科学研究院）；National Institute for Materials Science（国立材料研究所）；California Institute of Technology（加州理工学院）
SrIrO$_3$ with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. We here report on the influence of an interfacial oxide layer on spin pumping experiments in Ni$_{80}$Fe$_{20}$ (NiFe)/SrIrO$_3$ bilayer heterostructures. To investigate this scenario we have carried out broadband ferromagnetic resonance (BBFMR) measurements, which indicate the presence of an interfacial antiferromagnetic oxide layer. We performed in-plane BBFMR experiments at cryogenic temperatures, which all…
We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-correlation functionals used (local-density approximation and hybrid functionals). We also find the calculated interfacial charge of (6.8 +/- 0.4) x 10^13 cm-2 to be in excellent agreement with experim…
DFT calculations within the generalized Bloch theorem approach show that interfacial Dzyaloshinskii-Moriya interactions (DMI) at both interfaces of Graphene/Co$_n$/Pt(111) multilayer heterostructures are decoupled for $n \geq 3$. Unlike the property of magnetocrystalline anisotropy for this system, DMI is not affected by stacking defects in the Co layer. The effect of Graphene (Gr) is to invert the chirality of the vaccum/Co interfacial DMI, overall reducing the DMI of the heterostructure, which is nevertheless dominated by the strong spin-orbit coupling (SOC) of Pt. A spectral analysis in the…
We propose to use ferromagnetic insulator MnBi2Se4/Bi2Se3/antiferromagnetic insulator Mn2Bi2Se5 heterostructures for the realization of the axion insulator state. Importantly, the axion insulator state in such heterostructures only depends on the magnetization of the ferromagnetic insulator and hence can be observed in a wide range of external magnetic field. Using density functional calculations and model Hamiltonian simulations, we find that the top and bottom surfaces have opposite half-quantum Hall conductance, with a sizable global spin gap of 5.1 meV opened for the topological surface st…
We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/\GaMnAs trilayers and study the dependence of the exchange bias field on the thickness of the spacer layer.
In this study,we combined time-resolved terahertz spectroscopy along with transient absorption spectroscopy to revisit the interlayer non-equilibrium carrier dynamics in largely lateral size Gr/MoS2 heterostructure fabricated with chemical vapor deposition method. Our experimental results reveal that, with photon-energy below the A-exciton of MoS2 monolayer, hot electrons transfer from graphene to MoS2 takes place in time scale of less than 0.5 ps, resulting in ultrafast formation of interfacial exciton in the heterostructure, subsequently, recombination relaxation of the interfacial exciton o…
Graphene/ferromagnet interface promises a plethora of new science and technology. The interfacial Dzyaloshinskii Moriya interaction (iDMI) is essential for stabilizing chiral spin textures, which are important for future spintronic devices. Here, we report direct observation of iDMI in graphene/Ni80Fe20/Ta heterostructure from non-reciprocity in spin-wave dispersion using Brillouin light scattering (BLS) technique. Linear scaling of iDMI with the inverse of Ni80Fe20 thicknesses suggests primarily interfacial origin of iDMI. Both iDMI and spin-mixing conductance increase with the increase in de…
The large Landé g-factor, high spin-orbit coupling, and low effective mass of the two-dimensional electron gas in InSb quantum wells combined with proximal superconductivity may realize a scalable platform for topological quantum computation. Aluminum thin films directly deposited on top of InSb planar structures result in the formation of a reactive AlInSb layer at the interface. This interlayer progressively consumes the whole Al film, resulting in a disordered AlInSb layer after few months at room temperature. We report on a heterostructure design that results in a significant increase of t…
We point out that the effective channel for the interfacial thermal conductance, the inverse of Kapitza resistance, of metal-insulator/semiconductor interfaces is governed by the electron-phonon interaction mediated by the surface states allowed in a thin region near the interface. Our detailed calculations demonstrate that the interfacial thermal conductance across Pb/Pt/Al/Au-diamond interfaces are only slightly different among these metals, and reproduce well the experimental results of the interfacial thermal conductance across metal-diamond interfaces observed by Stoner et al. [Phys. Rev.…
Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling mechanisms is of capital importance. Here, using multidimensional photoemission spectroscopy, we provide a layer- and momentum-resolved view on ultrafast interlayer electron and energy transfer in a monolayer-WSe$_2$/graphene heterostructure. Depending on the nature of the optically prepared state, we find the different dominating transfer mechanisms: while electron…
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose. We show that the ICHE can occur in heterostructures composed of compensated antiferromagnetic metals and non-magnetic insulators due to reduced symmetry at the interface, and it can be made reversible if the antiferromagnet is layered symmetrically between two identical ferroelectric layers. We explicitly demonstrate this phenomenon using density functional t…
Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO3/SrTiO3, two dimensional conductive states form to avoid the polar discontinuity and magnetic properties are found at such interface. In this work, we propose a new type of interface between two nonmagnetic and nonpolar oxides that could host a conductive state with magnetic properties, where it is the ferroelectric polarization discontinuity instead of the polar discontinuity that leads to the charge transfer, forming the interfacial conductive or magnet…
We show that a semiconductor thin film can acquire a non-trivial spin texture due to the proximity effect induced by a topological insulator. The effect stems from coupling to the topological surface states and is present even when the insulator is doped. We propose a semiconductor/topological insulator heterostructure as a device that allows measuring interface properties and probing surface states in uncompensated samples. We also find that the topological insulator surface modes can be significantly broadened and shifted by the presence of metallic contacts.
Ultrafast THz radiation generation from ferromagnetic/nonmagnetic bilayer heterostructure-based spintronic emitters generally exploits the conversion from spin- to charge-current within the nonmagnetic layer and its interface with the ferromagnetic layer. Various possible sub-contributions to the underlying mechanism of inverse spin Hall effect for the THz emission from such structures, need to be exploited for not only investigating the intricacies at the fundamental level in the material properties themselves but also for improving their performance for broadband and high-power THz emission.…
The problem of screening the Coulomb interaction between charge carriers in type II heterostructures based on transition metal dichalcogenides is Analytically solved. At a sufficiently high density of charge carriers, the density dependence of the interlayer exciton energy is obtained. The energy of the interlayer exciton tends to zero in the metal--insulator transition point. The presented scheme of calculations makes it possible to find the temperature dependence of the density of this transition.
Descriptor-Based Classification of Interfacial Electronic Coupling in Janus XP3-Based 2D Heterostructures
Instituto de Física, Universidade Federal de Mato Grosso（马托格罗索联邦大学物理研究所）；National Institute of Science and Technology on Materials Informatics（材料信息学国家科学与技术研究所）；Instituto Federal de Educação, Ciência e Tecnologia do Triângulo Mineiro（米纳斯吉拉斯三角区联邦教育、科学与技术学院）；Departamento de Física,Universidade Federal de Lavras（拉夫拉斯联邦大学物理系）
We report an investigation of the structural and electronic properties of hybrid superconductor/ferromagnet (S/F) bilayers of composition Nb/Cu$_{60}$Ni$_{40}$ prepared by magnetron sputtering. X-ray and neutron reflectometry show that both the overall interfacial roughness and vertical correlations of the roughness of different interfaces are lower for heterostructures deposited on Al$_2$O$_3$(1$\bar{1}$02) substrates than for those deposited on Si(111). Mutual inductance experiments were then used to study the influence of the interfacial roughness on the superconducting transition temperatu…
Heterostructures of 2D materials offer a fertile ground to study ion transport and charge storage. Here we employ ab initio molecular dynamics to examine the proton-transfer/diffusion and redox behavior in a water layer confined in the graphene-Ti3C2O2 heterostructure. We find that in comparison with the similar interface of water confined between Ti3C2O2 layers, proton redox rate in the dissimilar interface of graphene-Ti3C2O2 is much higher, owning to the very different interfacial structure as well as the interfacial electric field induced by an electron transfer in the latter. Water molecu…
The magnetoelectric effect predicted in topological insulators makes heterostructures that combine magnetic materials and such insulators promising candidates for spintronics applications. Here, we theoretically consider a setup that exhibits two well-separated interfaces between a topological insulator and a ferromagnetic insulator. We show that there is a topological magnetic dipole-dipole interaction stemming from long-range Coulomb interactions. We analytically derive the magnetization dynamics at the two interfaces and discuss how the long-range coupling can be applied to non-locally indu…
Owing to its outstanding electronic properties, black phosphorus (BP) is considered as a promising material for next-generation optoelectronic devices. In this work, devices based on BP/MXene (Zrn+1CnT2, T = O, F, OH, n = 1, 2) van der Waals (vdW) heterostructures are designed via first-principles calculations. Zrn+1CnT2 compositions with appropriate work functions lead to the formation of Ohmic contact with BP in the vertical direction. Low Schottky barriers are found along the lateral direction in BP/Zr2CF2, BP/Zr2CO2H2, BP/Zr3C2F2, and BP/Zr3C2O2H2 bilayers, and BP/Zr3C2O2 even exhibits Ohm…
Interfacial perpendicular magnetic anisotropy, which is characterized by the first-order (K1) and second-order (K2) anisotropies, is the core phenomenon for nonvolatile magnetic devices. A sizable K2 satisfying a specific condition stabilizes the easy-cone state, where equilibrium magnetization forms at an angle from the film normal. The easy-cone state offers intriguing possibilities for advanced spintronic devices and unique spin textures, such as spin superfluids and easy-cone domain walls. Experimental realization of the easy-cone state requires understanding the origin of K2, thereby enha…
Topological insulators are new states of matter with a bulk gap and robust gapless surface states protected by time-reversal symmetry. When time-reversal symmetry is broken, the surface states are gapped, which induces a topological response of the system to electromagnetic field--the topological magnetoelectric effect. In this paper we study the behavior of topological surface states in heterostructures formed by a topological insulator and a magnetic insulator. Several magnetic insulators with compatible magnetic structure and relatively good lattice matching with topological insulators ${\r…
Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures such as strong spin-orbit coupling (SOC). Here we report the observation of a giant THE signal of 1.39 $μΩ\cdot$cm in the van der Waals het…
Voltage modulation of yttrium iron garnet (YIG) with compactness, high speed response, energy efficiency and both practical/theoretical siginificances can be widely applied to various YIG based spintronics such as spin Hall, spin pumping, spin Seeback effects. Here we initial an ionic modulation of interfacial magnetism process on YIG/Pt bilayer heterostructures, where the Pt capping would influence the ferromagnetic (FMR) field position significantly, and realize a significant magnetism enhancement in bilayer system. A large voltage induced FMR field shifts of 690 Oe has been achieved in YIG …
Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent works on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have established the tunabili…
We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enables direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface.
