发表机构
University of South Florida; State University of Campinas; Federal University of Rio Grande do Norte（南佛罗里达大学; 坎皮纳斯州立大学; 北里奥格兰德联邦大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过界面电荷转移增强VOx磁矩，并发现形貌决定集体磁动力学，为氧化物/过渡金属二硫化物异质结构中的磁性调控提供了互补途径。
AI 中文摘要
通过界面相互作用在二维半导体中工程化磁性，为替代取代掺杂提供了一种有吸引力的方案，并为在同一异质结构内集成磁性与光电功能提供了机会。在此，我们研究了沉积在单层MoSe2上的超薄VOx薄膜，并证明了VOx/MoSe2界面形成后磁响应的显著增强。结合结构、光谱、磁性和第一性原理分析，支持了一个一致的图像：有限的VOx团簇具有本征磁矩，且通过从MoSe2到氧化物的电子转移进一步增强。预测的电荷转移也与异质结构光致发光响应中观察到的三子贡献增加一致。除了这种界面增强外，磁性行为还受到超薄氧化物形貌的强烈控制。从不连续团簇到更连续薄膜的交叉产生了定性不同的温度依赖性：连续薄膜区域表现出传统的热退磁和矫顽力软化，而团簇区域则表现出不寻常的磁化随温度升高而增加和非单调的矫顽力。这些对比响应通过一个现象学模型捕获，其中形貌通过有效反转势垒的分布及其热激活可达性决定集体磁动力学。总之，这些结果建立了一个统一的图像：界面电荷转移增强了VOx的局部磁矩，而纳米尺度形貌控制着它们的集体磁动力学，为控制氧化物/过渡金属二硫化物异质结构中的磁性提供了互补的途径。
英文摘要
Engineering magnetism in two-dimensional semiconductors through interfacial interactions offers an attractive alternative to substitutional doping and provides opportunities for integrating magnetic and optoelectronic functionality within the same heterostructure. Here, we investigate ultrathin VOx films deposited on monolayer MoSe2 and demonstrate a pronounced enhancement of the magnetic response upon formation of the VOx/MoSe2 interface. Combined structural, spectroscopic, magnetic, and first-principles analyses support a consistent picture in which finite VOx clusters possess intrinsic magnetic moments that are further enhanced by electron transfer from MoSe2 to the oxide. The predicted charge transfer is also consistent with the increased trion contribution observed in the photoluminescence response of the heterostructure. Beyond this interfacial enhancement, the magnetic behavior is strongly governed by the morphology of the ultrathin oxide. A crossover from discontinuous clusters to more continuous films produces qualitatively different temperature dependences: the continuous-film regime exhibits conventional thermal demagnetization and coercive softening, whereas the clustered regime displays an unusual increase in magnetization and nonmonotonic coercivity with increasing temperature. These contrasting responses are captured by a phenomenological model in which morphology determines the collective magnetic dynamics through a distribution of effective reversal barriers and their thermally activated accessibility. Together, the results establish a unified picture in which interfacial charge transfer enhances the local magnetic moments of VOx, while nanoscale morphology governs their collective magnetic dynamics, providing complementary routes for controlling magnetism in oxide/transition-metal dichalcogenide heterostructures.
Comments27 pages, 7 figures
