由预沉积的反应物合成WTe2薄膜和高度结晶的纳米带
Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants
摘要：
二碲化钨是一种层状过渡金属二硫属化物，近年来引起了人们越来越多的研究兴趣。WTe 2具有很大的非饱和磁电阻，自旋电子学应用的潜力和作为II型Weyl半金属的前景。大多数关于WTe 2的工作都依赖于化学气相传输（CVT）生长晶体的机械剥离薄片进行研究。虽然生产高质量的样品，这种方法是由几个缺点，包括合成时间长，高温退火和固有的缺乏可扩展性阻碍。在这项工作中，证明了一种合成方法，允许生产大面积的WTe 2多晶薄膜。这是通过W和Te的预沉积膜在550摄氏度的相对低的温度下的反应来实现的。溅射X-射线光电子能谱学揭示了这些WTe 2膜在环境条件下的氧化的快速但自限性。WTe 2薄膜由微米尺寸的纳米带区域组成，这些纳米带可以被隔离，并提供作为CVT生长样品的替代品的潜力。这些纳米带是高度结晶与低缺陷密度表明，TEM和显示有前途的初始电气结果。
英文摘要：
Tungsten ditelluride is a layered transition metal dichalcogenide (TMD) that has attracted increasing research interest in recent years. WTe2 has demonstrated large non-saturating magnetoresistance, potential for spintronic applications and promise as a type-II Weyl semimetal. The majority of works on WTe2 have relied on mechanically-exfoliated flakes from chemical vapour transport (CVT) grown crystals for their investigations. While producing high-quality samples, this method is hindered by several disadvantages including long synthesis times, high-temperature anneals and an inherent lack of scalability. In this work, a synthesis method is demonstrated that allows the production of large-area polycrystalline films of WTe2. This is achieved by the reaction of pre-deposited films of W and Te at a relatively low temperature of 550 degC. Sputter X-ray photoelectron spectroscopy reveals the rapid but self-limiting nature of the oxidation of these WTe2 films in ambient conditions. The WTe2 films are composed of areas of micrometre sized nanobelts that can be isolated and offer potential as an alternative to CVT-grown samples. These nanobelts are highly crystalline with low defect densities indicated by TEM and show promising initial electrical results.
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