Localization of wavefunctions is arguably the most familiar effect of disorder in quantum systems. It has been recently argued [[V. Khemani, R. Nandkishore, and S. L. Sondhi, Nature Physics, 11, 560 (2015)] that, contrary to naive expectation, manipulation of a localized-site in the disordered medium may produce a disturbance over a length-scale much larger than the localization-length $ξ$. Here we report on the observation of this nonlocal phenomenon in electronic transport experiment. Being a wave property, visibility of this effect hinges upon quantum-coherence, and its spatial-scale may be ultimately limited by the phase-coherent length of the disordered insulator. Evidence for quantum coherence in the Anderson-insulating phase may be obtained from magneto-resistance measurements which however are useful mainly in thin-films. The technique used in this work offers an empirical method to measure this fundamental aspect of Anderson-insulators even in relatively thick samples.
This paper describes the observation of non-equilibrium field effects at room temperature in four disordered insulating systems: granular Al, discontinuous Au, amorphous NbSi and amorphous InOx thin films. The use of wide enough gate voltage ranges and a cautious analysis of the data allow us to uncover memory dips, the advocated hallmark of the electron glass, in the four systems. These memory dips are found to relax slowly over days of measurements under gate voltage changes, reflecting the impossibility for the systems to reach an equilibrium state within experimentally accessible times. Ou…
Structural correlations have a significant effect on light propagation in disordered media. We numerically investigate the role of short-range order in light absorption in thin films with disordered nanoholes. Two types of disordered distributions, including stealthy hyperuniform (SHU) and hard disk (HD) patterns with different degrees of short-range order, are studied. We find that Bragg scattering induced by short-range order results in the appearance of a gradually sharper absorption peak with the increasing of degrees of short-range order ($χ$, $ϕ$). A physical model is proposed to calcula…
We present an asymptotically exact renormalization-group theory of the superfluid--insulator transition in one-dimensional disordered systems, with emphasis on an accurate description of the interplay between the Giamarchi--Schulz (instanton--anti-instanton) and weak-link (scratched-XY) criticalities. Combining the theory with extensive quantum Monte Carlo simulations allows us to shed new light on the ground-state phase diagram of the one-dimensional disordered Bose-Hubbard model at unit filling.
The axion insulator is a higher-order topological insulator protected by inversion symmetry. We show that under quenched disorder respecting inversion symmetry {\it on average}, the topology of the axion insulator stays robust, and an intermediate metallic phase in which states are delocalized is unavoidable at the transition from an axion insulator to a trivial insulator. We derive this conclusion from general arguments, from classical percolation theory, and from the numerical study of a 3D quantum network model simulating a disordered axion insulator through a layer construction. We find th…
In this Letter, we study an Anderson-localization-induced quantized transport in disordered Chern insulators (CIs). By investigating the disordered CIs with a step potential, we find that the chiral interface states emerge along the interfaces of the step potential, and the energy range for such quantized transport can be manipulated through the potential strength. Furthermore, numerical simulations on cases with a multi-step potential demonstrate that such chiral state can be spatially shifted by varying the Fermi energy, and the energy window for quantized transport is greatly enlarged. Expe…
In disordered two dimensional Chern insulators, a single bulk extended mode is predicted to exist per band, up to a critical disorder strength; all the other bulk modes are localized. This behavior contrasts strongly with topologically trivial two-dimensional phases, whose modes all become localized in the presence of disorder. Using a tight-binding model of a realistic photonic Chern insulator, we show that delocalized bulk eigenstates can be observed in an experimentally realistic setting. This requires the selective use of resonator losses to suppress topological edge states, and acquiring …
We elucidate the mechanism by which a Mott insulator transforms into a non-Fermi liquid metal upon increasing disorder at half filling. By correlating maps of the local density of states, the local magnetization and the local bond conductivity, we find a collapse of the Mott gap toward a V-shape pseudogapped density of states that occurs concomitantly with the decrease of magnetism around the highly disordered sites but an increase of bond conductivity. These metallic regions percolate to form an emergent non-Fermi liquid phase with a conductivity that increases with temperature. Bond conducti…
Spin transport through magnetic insulators via magnons has recently been explored for a growing variety of magnetic systems with long-range order and well-understood spin excitation spectra. Here we show dramatic effects of spin transport through an amorphous magnetic insulator, which is both magnetically and structurally disordered. We generate and detect spin flow though amorphous yttrium-iron-garnet ($a$-YIG) thin films in a non-local geometry by use of the spin Hall and inverse spin Hall effects in platinum strips separated by 10 or more microns. By comparing non-local spin transport in $a…
We investigate the magnetic field evolution of the superconducting state in a strongly disordered NbN thin film which exhibits a magnetic field tuned superconductor to insulator-like transition, employing low temperature scanning tunneling spectroscopy (STS). Transport measurements of the sample reveals a characteristic magnetic field, which separates the low field state where resistance decreases with decreasing temperature, i.e. dR/dT > 0 and a high-field state where dR/dT < 0. However, STS imaging of the superconducting state reveals a smooth evolution across this field and the presence of …
In magnetically doped thin-film topological insulators, aligning the magnetic moments generates a quantum anomalous Hall phase supporting a single chiral edge state. We show that as the system de-magnetizes, disorder from randomly oriented magnetic moments can produce a `quantum anomalous parity Hall' phase with \emph{helical} edge modes protected by a unitary reflection symmetry. We further show that introducing superconductivity, combined with selective breaking of reflection symmetry by a gate, allows for creation and manipulation of Majorana zero modes via purely electrical means and at ze…
Calculation of topological invariants for crystalline systems is well understood in reciprocal space, allowing for the topological classification of a wide spectrum of materials. In this work, we present a new technique based on the entanglement spectrum, which can be used to identify the hidden topology of systems without translational invariance. By training a neural network to distinguish between trivial and topological phases using the entanglement spectrum obtained from crystalline or weakly disordered phases, we can predict the topological phase diagram for generic disordered systems. Th…
The insulating state of matter can be probed by means of a ground state geometrical marker, which is closely related to the modern theory of polarization (based on a Berry phase). In the present work we show that this marker can be applied to determine the metal-insulator transition in disordered systems. In particular, for non-interacting systems the geometrical marker can be obtained from the configurational average of the norm-squared one-body density matrix, which can be calculated within open as well as periodic boundary conditions. This is in sharp contrast to a classification based on t…
We study the construction of programable integrated circuits with the help of disordered Chern insulators (CIs) in this letter. Specifically, the schemes for low dissipation logic devices and connecting wires are proposed. We use the external-gate-induced step voltage to construct spatially adjustable channels, where these channels take the place of the conventional wires. Our numerical calculation manifests that the external gates can be adopted to program the arbitrary number of wires ($n$-to-$m$ connections). We find that their electron transport is dissipationless and robust against gate v…
A higher-order topological insulator is a new concept of topological states of matter, which is characterized by the emergent boundary states whose dimensionality is lower by more than two compared with that of the bulk, and draws a considerable interest. Yet, its robustness against disorders is still unclear. Here we investigate a phase diagram of higher-order topological insulator phases in a breathing kagome model in the presence of disorders, by using a state-of-the-art machine learning technique. We find that the corner states survive against the finite strength of disorder potential as l…
The topological Anderson and Mott insulators are two phases that have so far been separately and widely explored beyond topological band insulators. Here we combine the two seemingly different topological phases into a system of spin-1/2 interacting fermionic atoms in a disordered optical lattice. We find that the topological Anderson and Mott insulators in the noninteracting and clean limits can be adiabatically connected without gap closing in the phase diagram of our model. Lying between the two phases, we uncover a disordered correlated topological insulator, which is induced from a trivia…
Even though no local order parameter in the sense of the Landau theory exists for topological quantum phase transitions in Chern insulators, the highly non-local Berry curvature exhibits critical behavior near a quantum critical point. We investigate the critical properties of its real space analog, the local Chern marker, in weakly disordered Chern insulators. Due to disorder, inhomogeneities appear in the spatial distribution of the local Chern marker. Their size exhibits power-law scaling with the critical exponent matching the one extracted from the Berry curvature of a clean system. We dr…
In this communication, we numerically studied disordered quantum transport in a quantum anomalous Hall insulator-superconductor junction based on the effective edge model approach. In particular, we focus on the parameter regime with the free mean path due to elastic scattering much smaller than the sample size and discuss disordered transport behaviors in the presence of different numbers of chiral edge modes, as well as non-chiral metallic modes. Our numerical results demonstrate that the presence of multiple chiral edge modes or non-chiral metallic modes will lead to a strong Andreev conver…
The superfluid insulator transition of ultra-cold bosons in disordered 1d traps
我们导出了一个有效的量子约瑟夫森阵列模型，用于弱相互作用的一维凝聚体，该凝聚体被无序势分裂成弱耦合的水坑。从第一性原理得到的耦合常数的分布表明，无序势中的弱相互作用玻色子经历由强随机不动点控制的超流绝缘体转变[Phys. Rev. Lett. 93，150402（2004）]。我们计算重整化群流的具体实现的无序势，以方便有限尺寸标度的实验结果，并允许比较的行为所规定的强随机性不动点。通过对平均场结果的修正，得到了系统的相图。
Abstract: Using ab initio calculations supported by experimental transport measurements, we present the first credible candidate for the realization of a disorder-induced Topological Anderson Insulator in a real material system. High energy reactive ball-milling produces a polymorph of Cu2ZnSnS4 with high cation disorder, which shows an inverted ordering of bands at the Brillouin zone center, in contrast to its ordered phase. Adiabatic continuity arguments establish that this disordered Cu2ZnSnS4 can be connected to the closely related Cu2ZnSnSe4, previously predicted to be a 3D topological in…
Superfluid-insulator transition of disordered bosons in one-dimension
利用强随机实空间重整化群方法研究了一维相互作用玻色子系统中的超流-绝缘体相变。与微扰方法不同，这种方法不受失控流的影响，并允许我们研究完整的相图。我们表明，超流绝缘体转变总是Kosterlitz-无像的方式，长度和时间尺度在临界点发散。然而，有趣的是，我们发现，在强无序的转变发生在一个非普适值的Luttinger参数，这取决于无序强度。这一结果将转变置于不同于Giamarchi和Schulz首先分析的弱无序转变的普适性类中[Europhys. Lett. { \bf 3}，1287（1987）]。虽然无序势的细节在临界点处不重要，但无序的类型确实影响绝缘相的性质。我们发现三个类别的绝缘体所产生的不同类别的无序势。对于无序只在充电能量和约瑟夫森耦合常数，在整数填充，我们发现一个不可压缩的，但无间隙的莫特玻璃相。如果允许整数和半整数填充因子，则相应的相是随机单重态绝缘体，其具有发散的可压缩性。最后，在一般的无序势中，绝缘体是具有有限压缩性的玻色玻璃。
We study disordered topological insulators with time reversal symmetry. Relying on the noncommutative index theorem which relates the Chern number to the projection onto the Fermi sea and the magnetic flux operator, we give a precise definition of the $Z_2$ index which is a noncommutative analogue of the Atiyah-Singer $Z_2$ index. We prove that the noncommutative $Z_2$ index is robust against any time-reversal symmetric perturbation including disorder potentials as long as the spectral gap at the Fermi level does not close.
In this work, we study the disorder effects on the bulk-boundary correspondence of two-dimensional higher-order topological insulators (HOTIs). We concentrate on two cases: (i) bulk-corner correspondence, (ii) edge-corner correspondence. For the bulk-corner correspondence case, we demonstrate the existence of the mobility gaps and clarify the related topological invariant that characterizes the mobility gap. Furthermore, we find that, while the system preserves the bulk-corner correspondence in the presence of disorder, the corner states are protected by the mobility gap instead of the bulk ga…
