Realizing multiply resonant photonic crystal cavities with large free spectral range is key to achieve integrated devices with highly efficient nonlinear response, such as frequency conversion, four-wave mixing, and parametric oscillation. This task is typically difficult owing to the cavity modes' sensitivity to fabrication disorder, which makes it hard to reliably achieve a comb-like spectrum of equally spaced modes even when a perfect matching is theoretically predicted. Here we show that a comb-like spectrum of up to 8 modes with very high quality factor and diffraction limited volumes can be engineered in the bichromatic-type potential of a two-dimensional photonic crystal cavity fabricated in a thin silicon membrane. To cope with the tight tolerance in terms of frequency spacings and resonance linewidths, we develop a permanent post-processing technique that allows the selective tuning of individual confined modes, thus achieving an almost perfect frequency matching of high Q resonances with record finesse in silicon microresonators. Our experimental results are extremely promising in view of ultra-low power nonlinear photonics in silicon.
Passivated, hole-selective contacts play important role in reducing surface recombination by lowering the concentration of electrons in the rear side of a solar cell. However, parasitic optical losses in these contacts can still limit the performance of the cell. In this work, the long wavelength optical losses of silicon solar cells featuring hole-selective molybdenum oxide (MoOx) rear contacts are investigated using optical simulations. The potential of these selective contacts for possible enhancement of photogenerated current density was also investigated for their use with nanostructured …
Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techn…
Silicon nanoparticles possess unique size-dependent optical properties due to their strong electric and magnetic resonances in the visible range. However, their widespread application has been limited, in comparison to other (e.g. metallic) nanoparticles, because their preparation on monodisperse colloids remains challenging. Exploiting the unique properties of Si nanoparticles in nano- and micro-devices calls for methods able to sort and organize them from a colloidal suspension onto specific positions of solid substrates with nanometric precision. Here, we demonstrate that surfactant-free Si…
Engineering of Dual Wavelength, Polarization Selective Metalenses in Silicon Carbide
University of Technology Sydney（悉尼科技大学）；ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney（悉尼大学变革性超光学系统卓越中心）；Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University（澳大利亚国立大学电子材料工程系物理研究学院变革性超光学系统卓越中心）
We propose a frequency selective light trapping scheme that enables the creation of more visually-transparent and yet simultaneously more efficient semitransparent solar cells. A nanoparticle scattering layer and photonic stack back reflector create a selective trapping effect by total internal reflection within a medium, increasing absorption of IR light. We propose a strong frequency selective scattering layer using spherical TiO2 nanoparticles with radius of 255 nm and area density of 1.1% in a medium with index of refraction of 1.5. Using detailed numerical simulations for this configurati…
Photonic crystal (PhC) cavities are promising candidates for Si photonics integrated circuits due to their ultrahigh quality (Q)-factors and small mode volumes. Here, we demonstrate a novel concept of a one-dimensional hybrid III-V/Si PhC cavity which exploits a combination of standard silicon-on-insulator technology and active III-V materials. Using template-assisted selective epitaxy, the central part of a Si PhC lattice is locally replaced with III-V gain material. The III-V material is placed to overlap with the maximum of the cavity mode field profile, while keeping the major part of the …
We use numerical simulations to demonstrate third-harmonic generation with near-unity nonlinear circular dichroism (CD) and high conversion efficiency ($ 10^{-2}\ \text{W}^{-2}$) in asymmetric Si-on-SiO$_2$ metasurfaces. The working principle relies on the selective excitation of a quasi-bound state in the continuum, characterized by a very high ($>10^5$) quality-factor. By tuning multi-mode interference with the variation of the metasurface geometrical parameters, we show the possibility of independent control of linear CD and nonlinear CD. Our results pave the way for the development of all-…
Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser …
We design and demonstrate a compact, low-power, low-dispersion and broadband optical modulator based on electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW). The EO polymer is engineered for large EO activity and near-infrared transparency. The half-wave switching-voltage is measured to be Vπ=0.97V over optical spectrum range of 8nm, corresponding to a record-high effective in-device r33 of 1190pm/V and Vπ L of 0.291Vmm in a push-pull configuration. Excluding the slow-light effect, we estimate the EO polymer is poled with an ultra-high efficiency of 89pm/V in the s…
Topological protection in photonics offers new prospects for guiding and manipulating classical and quantum information. The mechanism of spin-orbit coupling promises the emergence of edge states that are helical; exhibiting unidirectional propagation that is topologically protected against back-scattering. We directly observe the topological states of a photonic analogue of electronic materials exhibiting the quantum Spin Hall effect, living at the interface between two silicon photonic crystals with different topological order. Through the far-field radiation that is inherent to the states' …
Metasurfaces have attracted extensive interests due to their ability to locally manipulate optical parameters of light and easy integration to complex optical systems. Particularly, metasurfaces can provide a novel platform for splitting and diffracting light into several beams with desired profile, which is in contrast to traditional gratings. Here, we propose and experimentally demonstrate a novel method for generating independently selective diffraction orders. Our method is based on complex amplitude modulation with ultrathin dielectric metasurfaces. By tailoring the geometric parameters o…
We demonstrate the first low-noise mid-IR frequency comb source using a silicon microresonator. Our observation of strong Raman scattering lines in the generated comb suggests that Raman and four-wave mixing interactions play a role in assisting the transition to the low-noise state. In addition, we characterize, the intracavity comb generation dynamics using an integrated PIN diode, which takes advantage of the inherent three-photon absorption process in silicon.
High-index spherical nanoparticles with low material losses support sharp high-Q electric and magnetic resonances and exhibit a number of interesting optical phenomena. Developments in fabrication techniques have enabled the further study of their properties and the investigation of related optical effects. After deposition on a substrate, the optical properties of a particle change dramatically due to mutual interaction. Here, we consider a silicon spherical nanoparticle on a dielectric one-layered substrate. At the normal incidence of light, the layer thickness controls the contribution of t…
We propose a system of coupled microring resonators for the generation frequency combs and dissipative Kerr solitons in silicon at telecommunication frequencies. By taking advantage of structural slow-light, the effective non-linearity of the material is enhanced, thus relaxing the requirement of ultra-high quality factors that currently poses a major obstacle to the realization of silicon comb devices. We demonstrate a variety of frequency comb solutions characterized by threshold power in the 10-milliwatt range and a small footprint of $0.1$ mm$^2$, and study their robustness to structural d…
We numerically study the mechanisms of frequency comb generation in the mid-infrared spectral region from cw pumped silicon microring resonators. Coherent soliton comb generation may be obtained even for a pump with zero linear cavity detuning, through suitable control of the effective lifetime of free-carriers from multiphoton absorption, which introduces a nonlinear cavity detuning via free-carrier dispersion. Conditions for optimal octave spanning Raman comb generation are also described.
Mid-infrared (mid-IR) frequency combs have broad applications in molecular spectroscopy and chemical/biological sensing. Recently developed microresonator-based combs in this wavelength regime could enable portable and robust devices using a single-frequency pump field. Here, we report the first demonstration of a modelocked microresonator-based frequency comb in the mid-IR spanning 2.4 μm to 4.3 μm. We observe high pump-to-comb conversion efficiency, in which 40% of the pump power is converted to the output comb power. Utilizing an integrated PIN structure allows for tuning the silicon micror…
Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and the capability to grow directly on lattice-mismatched silicon substrates. Although there have been remarkable advances in nanowire-based emitters, their practical applications are still in the early stages due to the difficulties in integrating nanowire emitters with photonic integrated circuits (PICs). Here, we demonstrate for the first…
We utilize silicon-nitride waveguides to self-reference a telecom-wavelength fiber frequency comb through supercontinuum generation, using 11.3 mW of optical power incident on the chip. This is approximately ten times lower than conventional approaches using nonlinear fibers and is enabled by low-loss (<2 dB) input coupling and the high nonlinearity of silicon nitride, which can provide two octaves of spectral broadening with incident energies of only 110 pJ. Following supercontinuum generation, self-referencing is accomplished by mixing 780-nm dispersive-wave light with the frequency-doubled …
We experimentally demonstrate tunable, highly-stable frequency combs with high repetition-rates using a single, charge injection based silicon PN modulator. In this work, we demonstrate combs in the C-band with over 8 lines in a 20-dB bandwidth. We demonstrate continuous tuning of the center frequency in the C-band and tuning of the repetition-rate from 7.5GHz to 12.5GHz. We also demonstrate through simulations the potential for bandwidth scaling using an optimized silicon PIN modulator. We find that, the time varying free carrier absorption due to carrier injection, an undesirable effect in d…
We present the detailed characterization of the phase dynamics of a telecom hybrid III-V-on-silicon passively mode-locked laser with a ring cavity. We explore the various regimes of operation as a function of gain current and saturable absorber bias voltage. We use a stepped-heterodyne measurement to quantify the spectral chirp and reconstruct the pulse envelop. With this technique we are able to identify regimes of near-transform-limited operation and we assess the degradation of mode-locking in the comb phase relationship when saturable absorber bias voltage is changed. Finally, we present a…
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\times 10^6 $ at 1552 nm, and $>1.2\times 10^6$ throughout $λ$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instabi…
Digital camera sensors utilize color filters on photodiodes to achieve color selectivity. As color filters and photosensitive silicon layers are separate elements, these sensors suffer from optical cross-talk, which sets limits to the minimum pixel size. In this paper, we report hybrid silicon-aluminum nanostructures in the extreme limit of zero distance between color filters and sensors. This design could essentially achieve sub micron pixel dimensions and minimize the optical cross-talk originated from tilt illuminations. The designed hybrid silicon-aluminum nanostructure has dual functional…
We demonstrate a phase-selective and colorless quantum receiver assisted by a silicon-on-insulator microring, enabling a low 1.3% QBER at 5.3kb/s secure-key rate. No penalty incurs compared to a delay interferometer. BiCMOS 3D-integration is proven feasible.
Nanophotonic waveguides with sub-wavelength mode confinement and engineered dispersion profiles are an excellent platform for application-tailored nonlinear optical interactions at low pulse energies. Here, we present fully air clad suspended-silicon waveguides for infrared frequency comb generation with optical bandwidth limited only by the silicon transparency. The achieved spectra are lithographically tailored to span 2.1 octaves in the mid-infrared (2.0-8.5 um or 1170--5000 cm-1) when pumped at 3.10 um with 100 pJ pulses. Novel fork-shaped couplers provide efficient input coupling with onl…
We consider radiation generated by an electron travelling parallel to a planar rectangular silicon grating: Smith-Purcell radiation to the vacuum side, internal Smith-Purcell radiation into the dielectric, and Cherenkov radiation into the dielectric. Internal Smith-Purcell radiation dominates over the other two radiation mechanisms in the range where conventional Smith-Purcell radiation is forbidden. This observation may lead to improved design of contactless particle beam monitors.
Dispersion engineering is among the most important steps towards a promising optical frequency comb. We propose a new and general approach to trim frequency combs using a self-adaptive boundary of the optical mode at different wavelengths in a sub-wavelength structured waveguide. The feasibility of ultra-wide bandwidth dispersion engineering comes from the fact that light at different wavelengths automatically self-adapts to slightly different effective spatial spans determined by the effective indices of the mode. Using this self-adaptive variation on the confinement, we open up the window of…
Kerr frequency comb generation relies on dedicated waveguide platforms that are optimized towards ultralow loss while offering comparatively limited functionality restricted to passive building blocks. In contrast to that, the silicon-photonic platform offers a highly developed portfolio of high-performance devices, but is deemed to be inherently unsuited for Kerr comb generation at near-infrared (NIR) telecommunication wavelengths due to strong two-photon absorption (TPA) and subsequent free-carrier absorption (FCA). Here we present a theoretical investigation that quantifies the impact of TP…
Optical frequency combs represent a revolutionary technology for high precision spectroscopy due to their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared (IR) spectral region (2-20 um) is of great interest due to the presence of a large number of gas absorption lines in this wavelength regime. Recently, frequency combs have been demonstrated in the MIR in several platforms, including fiber combs, mode-locked lasers, optical parametric oscillators, and quantum cascade lasers. However, these platforms are either relatively bulky or challenging to int…
Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent LiDAR, or photonics-assisted signal processing. Here, we report on heterogeneously integrated laser soliton microcombs combining both InP/Si semiconductor lasers and ultralow-loss silicon nitride microresonators on monolithic silicon substrate. Thousands of devices are produced from a sing…
Polarization-Sensitive Third Harmonic Generation in resonant silicon nitride Metasurfaces for deep-UV Emission
Universitat Politècnica de Catalunya（加泰罗尼亚理工大学）；Università degli Studi di Brescia（布雷西亚大学）；DTU Nanolab, National Center for Nanofabrication and Characterization（丹麦技术大学纳米实验室，国家纳米加工与表征中心）；DTU Electro, Department of Electrical and Photonics Engineering（丹麦技术大学电气与光子工程系）
