arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1802.01006physics.optics

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

Jeff Chiles, Nima Nader, Daniel D. Hickstein, Su Peng Yu, Travis Crain Briles, David Carlson, Hojoong Jung, Jeffrey M. Shainline, Scott Diddams, Scott B. Papp, … 展开作者

Jeff Chiles, Nima Nader, Daniel D. Hickstein, Su Peng Yu, Travis Crain Briles, David Carlson, Hojoong Jung, Jeffrey M. Shainline, Scott Diddams, Scott B. Papp, Sae Woo Nam, Richard P. Mirin

英文摘要:

We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\times 10^6 $ at 1552 nm, and $>1.2\times 10^6$ throughout $λ$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑