Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films passivated with magnesium difluoride (MgF2) or silicon (Si) capping layers. Electrical measurements show that deposition of MgF2 or Si has minimal impact on the transport properties of Na3Bi whilst in ultra-high vacuum. Importantly, the MgF2-passivated Na3Bi films are air-stable and remain metallic for over 100 hours after exposure to air, as compared to near instantaneous degradation when they are unpassivated. Air stability enables transfer of films to a conventional high-magnetic field cryostat, enabling quantum transport measurements which verify that the Dirac semimetal character of Na3Bi films is retained after air exposure.
Herein, titania thin films are fabricated by a facile liquid-phase method based on vacuum filtration of a colloidal suspension of titania nanosheets, which is followed by thermal annealing to transform the nanosheet film into anatase TiO2. Nanosheet-derived titania thin films exhibit poor resistive switching with an interface-type mechanism. This behaviour is distinct from the filamentary switching that has been observed with titania thin films fabricated by other conventional techniques. This tolerance against conducting-filament formation may be ascribed to a low concentration of oxygen vaca…
Supported carbon nanosheets and carbon nanotubes served as sacrificial templates for preparing spacious TiO2 photocatalytic thin films. Amorphous TiO2 was deposited conformally on the carbonaceous template material by atomic layer deposition (ALD). Upon calcination at 550°C, the carbon template was oxidatively removed and the as-deposited continuous amorphous TiO2 layers transformed into interlinked anatase nanoparticles with an overall morphology commensurate to the original template structure. The effect of type of template, number of ALD cycles and gas residence time of pollutant on the pho…
Crystallization of thin film materials by exploiting laser induced crystallization has been advancing for the past four decades. This unique thin film technique has been predominantly used in processing thin film materials made of a single chemical element; however, harnessing this technique to extend its use for thin film materials containing multiple chemical elements (e.g., metal oxides) unlocks applications currently not accessible. In this study, laser crystallization of a Cu2O strip was demonstrated. A continuous-wave laser diode with a micrometer-scale chevron-shaped beam profile (micro…
Zinc nitride films were synthesized by reactive radio frequency (rf) magnetron sputtering of a zinc target using an Ar+N2 mixture. The as-deposited films were annealed in the air and O2 at 300 °C for 1 hr. The XRD measurements indicated that the films had a polycrystalline structure with a preferred (400) Zn3N2 orientation. The annealing process enhanced the crystallinity. After annealing, the AFM and SEM morphology revealed no significant change in the surface morphology and surface roughness. The direct bandgap of Zn3N2 was estimated to be in the range of 1.15 -1.35 eV where annealing result…
Understanding the dynamic behavior of the domain structure is critical to the design and application of super-elastic freestanding ferroelectric thin films. The phase-field simulation is currently a powerful tool for observing, exploring, and revealing domain switching behavior and phase transition in ferroelectric materials at the mesoscopic scale. The present review summarizes the recent progress of phase-field methods in the theoretical interpretation, mechanical response, and domain structure evolution of freestanding ferroelectric thin films, wrinkled structures, and nano-springs. Further…
Methylammonium lead halide perovskites have been developed as highly promising materials to fabricate efficient solar cells in the past few years. The real impact to energy applications relies on the understanding and controlling of the stability of the material. We investigated the degradation of CH3NH3PbI3 by air exposure using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The stoichiometric sample was grown with co-evaporation of PbI2 and CH3NH3I on a Au coated Si wafer. It was found that the perovskite thin film gradually turned to PbI2…
We report on the chemical stability of La2/3Ca1/3MnO3 thin films. X-ray absorption spectroscopy at the Mn L-edge and O K-edge makes evident deviations from the nominally expected (2/3-1/3) Mn3+/Mn4+ ratio after the growth of thin films on LaAlO3 substrates. As-grown thin films, exhibiting Curie temperature, TC, well below that of the LCMO bulk material, develop an unexpected Mn2+ contribution after a few days of air exposure which increases with time. Moreover, a reduction of the saturation magnetization, MS, is also detected. The similarity of the results obtained by electron yield and fluore…
Nanometer-sized particular structures are generated on the surfaces of FeSe epitaxial films directly after exposure to air; this phenomenon was studied in the current work because these structures are an obstacle to field-induced superconductivity in electric double-layer transistors using FeSe channel layers. Chemical analyses using field-effect scanning Auger electron spectroscopy revealed no clear difference in the chemical composition between the particular structures and the other flat surface region. This observation limits the possible origins of the particulate formation to light eleme…
We present an efficient and general method to identify promising candidate configurations for thin-film oxides and to determine structural characteristics of (metastable) thin-film structures using ab initio calculations. At the heart of this method is the complexity of the oxide bulk structure, from which a large number of thin films with structural building blocks, that is motifs, from metastable bulk oxide systems can be extracted. These span a coarse but well-defined network of initial configurations for which density functional theory (DFT) calculations predict and implement dramatic atom…
We report the magnetic properties of yttrium iron garnet (YIG) thin films grown by pulsed laser deposition technique. The films were deposited on Si (100) substrates in the range of 15-50 nm thickness. Magnetic characterizations were investigated by ferromagnetic resonance spectra. Perpendicular magnetic easy axis was achieved up to 50 nm thickness. We observed that the perpendicular anisotropy values decreased by increasing the film thickness. The origin of the perpendicular magnetic anisotropy (PMA) was attributed to the texture and the lattice distortion in the YIG thin films. We anticipate…
In this work, we studied amorphous carbon ($a$-C) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) techniques. The microstructure and electronic properties reveal subtle differences in $a$-C thin films deposited by two techniques. While, films deposited with dcMS have a smooth texture typically found in $a$-C thin films, those deposited with HiPIMS consist of dense hillocks surrounded by a porous microstructure. The density of $a$-C thin films is a decisive parameter to judge their quality. Often, x-ray reflectivity (XRR) has been used to meas…
Different thicknesses of cobalt thin films were growth by magnetron sputtering deposition techniques. The films thicknesses were determinated with X ray Photoelectron Spectroscopy (XPS) and Quartz Crystal Monitoring (QCM). XPS is also used to determinate the films quality. The films magnetic properties were determinated by Ferromagnetic Resonance (FMR) technique.
We report on the synthesis of perovskite SrIrO3 thin films using sputtering technique. Single phase (110) oriented SrIrO$_3$ thin films were epitaxially grown on SrTiO3 (001) substrate. Using off-axis XRD $θ-2θ$ scans, we demonstrate that these films exhibit (110) out-of-plane orientation with (001) and (1-10) lying in-plane. The sputtering grown thin films have a smooth, homogeneous surface, and excellent coherent interface with the substrate.
Direct magnetization measurements of thin gold films are presented. These measurements integrate the signal from the thin film under study and the magnetic contribution of the film's interface with the substrate. The diamagnetic contribution to the signal from the bulk substrate is of the same order as the noise level. we find that thin gold films can exhibit positive magnetization. The character of their magnetic behavior is strongly substrate dependent.
Magnetron sputtering has also been used to deposit thin films of some materials and it has significant technological importance. A modeling on deposition of epitaxial thin films of Yttrium Stabilized Zirconia (YSZ) was done the diffusion of adatom on the surface were studies. There exists a strong interaction of ions formed in the plasma during the sputtering process. Cu thin films were deposited on Si. Nanocomposite thin film of SiCN showed dendritic growth.
Thin film quasicrystal coatings have unique properties such as very high electrical and thermal resistivity and very low surface energy. A nano quasicrystalline thin film of icosahedral Al-Ga-Pd-Mn alloy, has produced by flash evaporation followed by annealing. Attempts will be made to discuss the micromechanisms for the formation of quasicrystalline thin film in Al-Ga-Pd-Mn alloys
In this paper we investigate the influence of the substrate material and film thickness on the Peierls transition temperature in tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) thin films, grown by physical vapor deposition. Our analysis shows that the substrate material and the growth conditions strongly influence the film morphology. In particular, we demonstrate that the Peierls transition temperature in thin films is lower than in TTF-TCNQ single crystals. We argue that this effect arises due to defects, which emerge in TTF-TCNQ thin films during the growth process.
We demonstrate high performance chemical bath deposited CdS thin-film transistors TFTs using atomic layer deposited ZrO2 based high-k gate dielectric material.
Ba7Ir3O13+δ in thin film form is discovered. These films are characterized by colossal permittivity (CP) ~104 at room temperature, attributable to the colossal internal barrier layer capacitance effect at atomically thin domain boundaries. These findings suggest a new route to seeking novel CP materials through designing atomically thin domain boundaries.
The lattice of (001)-oriented BiFeO$_3$ epitaxial thin film has been identified by synchrotron x-ray diffraction. By choosing proper scattering zones containing the fixed (001) reflection, we have shown that low-symmetry phases similar to a $M_A$ phase exist in the thin film at room temperature. These results demonstrate a change in phase stability from rhombohedral in bulk single crystals, to a modified monoclinic structure in epitaxial thin films.
Varying the substrate temperature changes structural and magnetic properties of spinel ferrite NZFO thin films. XRD of films grown at different temperature display only 004 reflections, without any secondary peaks, showing growth orientation along the c axis. We find an increase in crystalline quality of these thin films with the rise of substrate temperature. The surface topography of the thin films grown on various growth temperatures conditions reveal that these films are smooth with low roughness, however the thin films grown at 800 C exhibit lowest average and rms roughness among all thin…
Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness- tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal for optoelectronics and flexible devices. However, its instability in air is of paramount concern for practical applications. Here, we demonstrate air-stable BP devices with dielectric and hydrophobi…
A novel broad-band measurement method of the MI in thin films and ribbons is presented. It is based on the automated measurement of the reflection coefficient of a cell loaded with the sample. Illustrative results obtained with a permalloy multilayer thin film are presented and discussed.
Tin Sulphide (SnS) thin films have been recognized as a potential candidate for solar cells. Many fabrication techniques have been used to grow SnS thin films. The band-gap, ${\rm E_g}$ of SnS films as reported in literature, were found to vary from 1.2-2.5 eV depending on the film fabrication technique. The present work reports the structural, compositional, morphological and optical characterization of SnS thin films fabricated by thermal evaporation at room temperature. Results show that for the given fabrication technique/ condition, the band-gap functionally depends on the lattice paramet…
The phenomenon of potential sputtering of ultra-thin Pt films due to impact of 20 keV highly charged $Ar^{q+}$ (q = 3 - 8) ions has been investigated. The results show enhanced erosion of the Pt film with the increase of potential energy of the Ar projectile.
BiFeO3 thin films have been deposited on Pt/sapphire and Pt/Ti/SiO2/Si substrates with pulsed laser deposition using the same growth conditions, respectively. Au was sputtered as the top electrode. The microscopic structure of the thin film varies by changing the underlying substrate. Thin films on Pt/sapphire are not resistively switchable due to the formation of Schottky contacts at both the top and the bottom interface. However, thin films on Pt/Ti/SiO2/Si exhibit an obvious resistive switching behavior under forward bias. The conduction mechanisms in BiFeO3 thin films on Pt/sapphire and Pt…
We report studies of ferroelectricity in ultra-thin perovskite films with realistic electrodes. The results reveal stable ferroelectric states in thin films less than 10 Åthick with polarization normal to the surface. Under short-circuit boundary conditions, the screening effect of realistic electrodes and the influence of real metal/oxide interfaces on thin film polarization are investigated. Our studies indicate that metallic screening from the electrodes is affected by the difference in work functions at oxide surfaces. We demonstrate this effect in ferroelectric PbTiO$_3$ and BaTiO$_3$ fil…
An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any further post-deposition annealing treatment of the grown films. The developed method allows to grow thin films at low substrate temperature that prevents them from the considerable loss of their intrinsic electrical and optical properties. The influence of deposition parameters on the electrical and optical parameters of the undoped and the indium doped ZnO th…
This paper discusses questions of synthesizing and pressing vanadium oxides to create film-forming materials that can be used in producing optical coatings. Based on the film-forming materials thus created, technological processes have been developed for fabricating coatings from vanadium dioxide by two methods of producing thin films: vacuum evaporation and magnetron sputtering. Questions of using films made from vanadium oxide in optical instrumentation are considered.
Far-infrared and terahertz spectroscopy of ferroelectric soft and central modes in thin films on substrates is reviewed. In addition to classical displacive proper ferroelectrics, also incipient and relaxor ferroelectrics and multiferroics are discussed. Special attention is paid to differences between the soft-mode behavior in thin films and bulk materials (ceramics and single crystals) and their influence on the low-frequency permittivity. Particularly the effects of the thin film strains and depolarizing electric fields of the probing waves on the grain boundaries are emphasized. The soft-m…
Ferroelectric materials with up-conversion luminescence (UCL) properties have potential opto-electric applications for display and sensing etc. Here, we demonstrate strong green UCL and enhanced electrical properties in Er3+-doped Na0.5Bi0.5TiO3 thin films. The thin films are prepared via using a modified chemical solution deposition method. These thin films are phase-pure and crystallized in perovskite structure. The largest remnant polarization (Pr) and highest dielectric constant are obtained from Na0.5Bi0.49Er0.01TiO3 thin films, and their values are 0.22 C/m2 and 1166, respectively. Meanw…
The temperature coefficients of the resistivity (TCR) of Cu, Ru, Co, Ir, and W thin films have been investigated as a function of film thickness below 10 nm. Ru, Co, and Ir show bulk-like TCR values that are rather independent of the thickness whereas the TCR of Cu increases strongly with decreasing thickness. Thin W films show negative TCR values, which can be linked to high disorder. The results are qualitatively consistent with a temperature-dependent semiclassical thin film resistivity model that takes into account phonon, surface, and grain boundary scattering.
Nanowear properties of sputtered Au films in dry and wet environments were investigated using a scanning nanoindenter. Gold exhibits over 10 times higher wear rate in water compared to air at the same normal load of 10 microN. The friction coefficient obtained from scratch tests remained constant at 0.2 regardless of the testing conditions. Au surface roughness increased from 3 to 8 nm after 200 wear cycles in air. Surface ripples, 200 nm high developed on the Au film surface after 200 wear cycles in water. Film scratch hardness compares well with the nanoindentation hardness.
Co and CoO thin films were deposited by magnetron sputtering in the form of multilayers. They were irradiated with Ar and Si ion beams of different energies and fluences. The magnetic properties were investigated.
A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional non-parabolic carrier-pocket. Based on this model, the symmetries and the band-shifts of different carrier-pockets are evaluated for BiSb thin films that are grown along different crystalline axes. The phase diagrams for the BiSb thin film systems with different growth orientations are calculated and analyzed.
Here we report the adsorption behaviour of a water soluble laser dye rhodamine onto ultrathin films prepared by LB technique without altering its photophysical behabiour.
Epitaxial LaRh1/2Mn1/2O3 thin films have been grown on (001)-oriented LaAlO3 and SrTiO3 substrates using pulsed laser deposition. The optimized thin film samples are semiconducting and ferromagnetic with a Curie temperature close to 100 K, a coercive field of 1200 Oe, and a saturation magnetization of 1.7muB per formula unit. The surface texture, structural, electrical, and magnetic properties of the LaRh1/2Mn1/2O3 films was examined as a function of the oxygen concentration during deposition. While an elevated oxygen concentration yields thin films with optimal magnetic properties, slightly l…
We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposited a red phosphorus (RP) thin-film on a flexible polyester substrate, followed by its conversion to BP in a high-pressure multi-anvil cell at room temperature. Raman spectroscopy and transmission electron microscopy measurements confirmed the formation of a nano-crystalline BP thin-film with a thickness of around 40 nm. Optical characterization indicates a bandgap of around 0.28 eV in the converted BP, similar to the bandgap measured in exfoliated thin-…
The current practice of angular (Lorentz, Polarization and absorption (LPA)) corrections in bulk materials for higher angle broad peaks, due to the Kα doublet, are based on the results of Pike (Acta Cryst., 12 (1959) 87-92) and Ladell (Acta Cryst. 14 (1961) 47-53). These results are extended to thin film x-ray diffraction. The current practice in thin film studies of using the absorption factors for monochromatic radiation in LPA corrections is incorrect in both symmetric and grazing incidence x-ray diffraction. The correct expressions for absorption corrections are developed. In addition, a n…
Thin-film based phase plates are meanwhile a widespread tool to enhance the contrast of weak-phase objects in transmission electron microscopy (TEM). The thin film usually consists of amorphous carbon, which suffers from quick degeneration under the intense electron-beam illumination. Recent investigations have focused on the search for alternative materials with an improved material stability. This work presents thin-film based phase plates fabricated from metallic glass alloys, which are characterized by a high electrical conductivity and an amorphous structure. Thin films of the zirconium-b…
In the present investigation resistivity Vs temperature measurements have been performed for solgel prepared pure and Ni doped CdO (NDO) thin films. The semiconducting behavior i.e. negative temperature coefficient of resistivity (TCR) of pure CdO thin film through-out the whole temperature range can be attributed mainly due to concentration dependent thermally activation mechanism of the carriers. The semiconductor to metal transition (SMT) for NDO thin films has been elucidated via combined effect of involved grain boundaries, ionic impurities, phonon scattering and carrier activation.
We report growth characteristics of epitaxial $β$-Na$_{0.6}$CoO$_{2}$ and $γ$-Na$_{0.7}$CoO$_{2}$ thin films on (001) sapphire substrates grown by pulsed-laser deposition. Reduction of deposition rate could change structure of Na$_{x}$CoO$_{2}$ thin film from $β$-phase with island growth mode to $γ$-phase with layer-by-layer growth mode. The $γ$-Na$_{0.7}$CoO$_{2}$ thin film exhibits spiral surface growth with multiterraced islands and highly crystallized texture compared to that of the $β$-Na$_{0.6}$CoO$_{2}$ thin film. This heterogeneous epitaxial film growth can give opportunity of strain e…
Epitaxial copper thin films were deposited by magnetron sputtering. The adatoms during deposition are influenced by deposition parameters which cause variations in thin film properties. XRD and FESEM studies were done to get an insight into the growth mechanisms of the films. A modeling has been done on the epitaxial thin film growth with sputtering process. The parameters during sputtering like, sputtering yield, pressure, temperature, current density, deposition time were related and an attempt has been made to analyze the sputtering process.
The electronic band structures of Bi${}_{1-x}$Sb${}_{x}$ thin films can be varied as a function of temperature, pressure, stoichiometry, film thickness and growth orientation. We here show how different anisotropic single-Dirac-cones can be constructed in a Bi${}_{1-x}$Sb${}_{x}$ thin film for different applications or research purposes. For predicting anisotropic single-Dirac-cones, we have developed an iterative-two-dimensional-two-band model to get a consistent inverse-effective-mass-tensor and band-gap, which can be used in a general two-dimensional system that has a non-parabolic dispersi…
Poly- and single-crystal thin films of U-Mo alloys have been grown both on glass and sapphire substrates by UHV magnetron sputtering. X-ray and Electron Backscatter Diffraction data indicate that for single-crystal U1-xMox alloys, the pure cubic uranium gamma-phase exists for x > 0.22 (10 wt.% Mo). Below 10 wt.% Mo concentration, the resulting thin film alloys exhibited a mixed alpha-gamma uranium phase composition.
In the paper we consider size effects of phase transitions and polar properties of the thin antiferroelectric films. We modified phenomenological approach proposed by Kittel. The Euler-Lagrange equations were solved by direct variational method. The free energy with renormalized coefficients depending on the film thickness has been derived. The approximate analytical expression for the coefficients dependence on film thickness, temperature, polarization gradient coefficient and extrapolation lengths were obtained. We have shown how the anti-ferroelectric double hysteresis loop transforms into …
An environmentally stable mesoscopic thin film of Au of certain thickness has been deposited thermally on top of a Ag+ implanted oxide substrate to develop a close to room temperature superconductor. This thin film has been deposited in two different stages. Initially, a sol-gel derived ion conducting metal oxide (ICMO) thin film has been deposited by spin coating. Afterward, Ag+ has been introduced inside ICMO thin film by a chemical method. Following this, a thin layer of Au has been deposited on top of that Ag ion-implanted oxide via thermal evaporation. The temperature dependent resistivit…
The effects of annealing and variation of temperature on the electrical and thermoelectric properties of e-beam evaporated InSe thin films has been investigated in details. The XRD study demonstrates that the as-deposited InSe thin films are amorphous while they become polycrystalline with the presence of In3Se4 phase after annealing. The SEM micrographs reveal that the surfaces of as-deposited films are smooth whereas they become non-uniform due to annealing. The heating and cooling cycles of the as-deposited films exhibit that the resistivity of the films shows an irreversible phase-transiti…
Assembling clusters on surfaces has emerged as a novel way to grow thin films with targeted properties. In particular, it has been proposed from experimental findings that fullerenes deposited on surfaces could give rise to thin films retaining the bonding properties of the incident clusters. However the microscopic structure of such films is still unclear. By performing quantum molecular dynamics simulations, we show that C_28 fullerenes can be deposited on a surface to form a thin film of nearly defect free molecules, which act as carbon superatoms. Our findings help clarify the structure of…
Thin films of Pr0.7Ca 0.3MnO3, Nd-0.5Ca0.5MnO3 and Nd0.5Sr0.5MnO3 have been fabricated. by pulse laser deposition. Magnetic and electrical transport properties of these films were compared with their bulk solids. All the films grow in (101) direction on LaAlO3(100). Electrical transport measurements carried out with and without magnetic field has shown dr/dT<0 in these thin films. Application of magnetic field has shown dilution of the insulating behavior. The magnetization studies of Nd-0.5Sr0.5MnO3 exhibited ferromagnetic behavior at 260K and showed antiferomagnetic feature below 130K. This …
Germanosilicide thin films are quite different from silicides and germanides. The germanium composition is not homogeneous, grains have a different shape, and the substrate is generally strained. This affects grain boundary grooving and favors agglomeration of germanosilicide films. Our thermodynamics model shows that the equilibrium Ge composition of germanosilicide films formed on strained substrates is inhomogeneous and these films are more likely to agglomerate than those formed on relaxed substrates, in agreement with experiments. Grain shape too can affect agglomeration: polygonal films,…
Very thin (1.2-2.5nm) self-assembled organic dielectric monolayers have been integrated into organic thin-film diode to achieve electrical characteristics. These dielectrics are fabricated by self-assembling deposition, resulting in smooth, strongly adherent, thermally stable, organosiloxane thin films having interesting electrical capacitances (around 150 nF cm-2 at -3V) and insulating properties (leakage current densities around 10-5 A cm2 at -1V).
The expression of temperature distribution along a film thickness is derived and distribution of temperature in the film as the substrate is heated is shown. The variation of film resistance with different substrate temperature is calculated and the existence of temperature gradient along the film thickness with finite thermal conductivity leads to hysteresis like behaviour on heating-cooling the film.
We present and apply a new method to measure directly weak magnetization in thin films. The polarization of a neutron beam channeling through a thin film structure is measured after exiting the structure edge as a microbeam. We have applied the method to a tri-layer thin film structure acting as a planar waveguide for polarized neutrons. The middle guiding layer is a rare earth based ferrimagnetic material TbCo5 with a low magnetization of about 20 mT. We demonstrate that the channeling method is more sensitive than the specular neutron reflection method.
Copper ferrite thin films were rf sputtered at a power of 50W. The as deposited films were annealed in air at 800°C and slow cooled. The transmission electron microscope (TEM) studies were carried out on as deposited as well as on slow cooled film. Significantly larger defect concentration, including stacking faults, was observed in 50W as deposited films than the films deposited at a higher rf power of 200W. The film annealed at 800°C and then slow cooled showed an unusual grain growth upto 180nm for a film thickness of ~240nm. These grains showed Kikuchi pattern.
Neodymium is a remarkable active component in numerous magnetic alloys that are used in various applications. However, the application of bare neodymium thin film is limited due to the lack of information about its electrical and magnetic properties. We report synergistic study of Nd thin film using experimental and theoretical techniques of polarized neutron reflectometry, magnetoresistance measurement and density functional theory. Unlike bulk Nd, thin film specimen is a very poor electrical conductor. Also, as grown thin film on silicon substrate does not exhibit any magnetism in zero field…
Based on Landau-Devonshire (LD) phenomenological theory, phase diagram of epitaxial BST50/50 thin films on anisotropic in-plane strains is investigated. Different from BaTiO3 thin films, the paraelectric phase appears under the anisotropic misfit strains on BST50/50 thin films at the room temperature. The pyroelectric property of the BST films is also calculated, we find that the position of pyroelectric peak greatly depends on anisotropic misfit strains. Keywords: anisotropic in-plane strains; BST thin films; phase diagram
We report measurements of viscoelastic properties of thin polymer films of 10-100 nm at the MHz range. These thin films are confined between a quartz crystal resonator and a millimetric bead layer, producing an increase of both resonance frequency and dissipation of the quartz resonator. The shear modulus and dynamic viscosity of thin films extracted from these measurements are consistent with the bulk values of the polymer. This modified quartz resonator provides an easily realizable and effective tool for probing the rheological properties of thin films at ambient environment.
