The optical reflectivity of Pb$_{0.865}$Sn$_{0.135}$Se and Pb$_{0.75}$Sn$_{0.25}$Se solid solutions was measured in the THz spectral region energetically corresponding to bulk optical phonon excitations and in the temperature range from 40 K to 280 K. The analysis of Pb$_{0.75}$Sn$_{0.25}$Se data performed within the dynamic dielectric function formalism revealed a new effect due to the electron-phonon coupling resulting in resonant changes of LO phonon frequency for energy gap equal to zero or to LO phonon energy. This effect is absent for Pb$_{0.865}$Sn$_{0.135}$Se that exhibits an open energy gap with trivial band ordering at all temperatures. These results show that reflectivity in the THz range constitute a versatile experimental method for precise determination of band inversion in narrow-gap topological materials. For Pb$_{0.75}$Sn$_{0.25}$Se the transition from trivial insulator to topological crystalline insulator phase takes place at temperature T$_0$ = (172 $\pm$ 2) K.
We present a theoretical prediction of a new mechanism for carrier population inversion in semiconductors under an applied electric field. The mechanism is originated from a coherent capture-emission type inelastic scattering of resonant states. We support our theory with concrete calculations for shallow acceptor resonant states in strained p-Ge where a lasing in THz frequency region has been recently observed.
Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter bar-rier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion di…
Chirality is ubiquitous in nature and plays crucial roles in biology, medicine, physics and materials science. Understanding and controlling chirality is therefore an important research challenge with broad implications in fundamental and applied sciences. Unlike other classes of chiral colloids, such as nanocellulose or filamentous viruses, amyloid fibrils form nematic phases but appear to miss their twisted form in the phase diagram, the so-called cholesteric or chiral nematic phases, and this despite a well-defined chirality at the single fibril level. Here we report the discovery of choles…
Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial to nontrivial topological phase transition. To understand how the properties critical to thermoelectric efficiency are affected by the band inversion, we measured the broadband optical response of Pb$_{0.77}$Sn$_{0.23}$Se as a function of temperature. We find clear optical evidence of the band inversion at $160\pm15$ K, and use the extended Drude model to a…
Topological phase transition in a single material usually refers to transitions between a trivial band insulator and a topological Dirac phase, but the transition may also occur between different classes of topological Dirac phases. However, it is a fundamental challenge to realize quantum transition between Z2 nontrivial topological insulator (TI) and topological crystalline insulator (TCI) in one material because Z2 TI and TCI are hardly both co-exist in a single material due to their contradictory requirement on the number of band inversions. The Z2 TIs must have an odd number of band inver…
In a topological crystalline insulator (TCI) the inversion of the bulk valence and conduction bands is a necessary condition to observe surface metallic states. Solid solutions of Pb$_{1-x}$Sn$_x$Te have been shown to be TCI, where band inversion occurs as a result of the band gap evolution upon alloying with Sn. The origins of this band inversion remain unclear. Herein the role of Sn insertion into the PbTe matrix is investigated for the $p$-type Pb$_{1-x}$Sn$_x$Te series with $x$ = 0, 0.35, 0.60, and 1.00 via nuclear magnetic resonance (NMR) and transport measurements. $^{207}$Pb, $^{119}$Sn…
We examine the ultrafast optical response of the crystalline and amorphous phases of the phase change material Ge$_2$Sb$_2$Te$_5$ below the phase transformation threshold. Simultaneous measurement of the transmissivity and reflectivity of thin film samples yields the time-dependent evolution of the dielectric function for both phases. We then identify how lattice motion and electronic excitation manifest in the dielectric response. The dielectric response of both phases is large but markedly different. At 800 nm, the changes in amorphous GST are well described by the Drude response of the gene…
We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.
We observe magnetic effects in ultra-high quality factor crystalline quartz Bulk Acoustic Wave resonators at milli-Kelvin temperature. The study reveals existence of hysteresis loops, jumps and memory effects of acoustical resonance frequencies. These loops arise as a response to the external magnetic field and span over few Hertz range for modes with linewidths of about $25$mHz, which constitute a frequency shift of order 60 linewidths. The effects are broadband but get stronger towards higher frequencies where both nonlinear effects and losses are limited by two level systems. This suggests …
Crystalline materials with ultralow thermal conductivity are highly desirable for thermoelectric applications. Many known crystalline materials with low thermal conductivity, including PbTe and Bi2Te3, possess a special kind of chemical bond called "resonant bond". Resonant bonds consist of superposition of degenerate bonding configurations that leads to structural instability, anomalous long-range interatomic interaction and soft optical phonons. These factors contribute to large lattice anharmonicity and strong phonon-phonon scattering, which result in low thermal conductivity. In this work,…
Cr resonant impurity for studies of band inversion and band offsets in IV-VI semiconductors
Institute of Physics, Polish Academy of Sciences（波兰科学院物理研究所）；Center for Science and Innovation in Spintronics, Tohoku University（东北大学自旋电子学科学与创新中心）；Research Institute of Electrical Communication, Tohoku University（东北大学电气通信研究所）；International Research Centre MagTop, Institute of Physics Polish Academy of Sciences（波兰科学院物理研究所磁顶国际研究中心）；ENSEMBLE3 Centre of Excellence for Nanophotonics, Advanced Materials and Novel Crystal growth-based Technologies（纳米光子学、先进材料及新型晶体生长技术卓越中心 ENSEMBLE3）；Faculty of Physics, University of Warsaw（华沙大学物理学院）
Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the films by the measurements of electrical transport and optical second harmonic generation. In this system, one can control the inversion of band gap, the electric polarization that breaks the inversion symmetry, and the Fermi level position by tuning the Pb/Sn ratio and In composition. A plethora of topological electronic phases are expected to emerge, such a…
We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that, in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit a equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photolumines…
We consider the non-radiative resonant energy transfer from a two-dimensional Wannier exciton (donor) to a Frenkel exciton of a molecular crystal overlayer (acceptor). We characterize the effect of the optical anisotropy of the organic subsystem on this process. Using realistic values of material parameters, we show that it is possible to change the transfer rate within typically a factor of two depending on the orientation of the crystalline overlayer. The resonant matching of donor and acceptor energies is also partly tunable via the organic crystal orientation.
We use atomistic simulations to study the resonant acoustic modes and compare different calculations of the acoustic mean-free path in amorphous systems with nanometric crystalline spherical inclusions. We show that the resonant acoustic properties are not a simple combination of the vibrations in the inclusions and in the amorphous matrix. The presence of the inclusion affects the transport properties mainly in the frequency range separating simple scattering from multiple scattering processes. However, propagation of acoustic wavepackets is spatially heterogeneous and shows that the amorphou…
Linking structure is a new concept characterizing topological semimetals, which indicates the interweaving of gap-closing nodes at the Fermi energy ($E_F$) with other nodes below $E_F$. As the number of linked nodes can be changed only via pair-creation or pair-annihilation, a linked node is more stable and robust than ordinary nodes without linking. Here we propose a new type of a linked nodal structure between a nodal line (nodal surface) at $E_F$ with another nodal line (nodal surface) below $E_F$ in two-dimensional (three-dimensional) spinless fermion systems with $\mathcal{IT}$ symmetry w…
We study the nature of (001) surface states in Pb_{0.73}Sn_{0.27}Se in the newly discovered topological-crystalline-insulator (TCI) phase as well as the corresponding topologically trivial state above the band-gap-inversion temperature. Our calculations predict not only metallic surface states with a nontrivial chiral spin structure for the TCI case, but also nonmetallic (gapped) surface states with nonzero spin polarization when the system is a normal insulator. For both phases, angle- and spin-resolved photoelectron spectroscopy measurements provide conclusive evidence for the formation of t…
We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discussed in the manuscript. It results that thermally-induced effective exchange coupling mediated by spin-dependent on and off resonant tunnelling of electrons via localized mid-gap defect states in the ZnSe…
We predict a new class of topological crystalline insulators (TCI) in the anti-perovskite material family with the chemical formula A$_3$BX. Here the nontrivial topology arises from band inversion between two $J=3/2$ quartets, which is described by a generalized Dirac equation for a "Dirac octet". Our work suggests that anti-perovskites are a promising new venue for exploring the cooperative interplay between band topology, crystal symmetry and electron correlation.
Motivated by the recent synthesis of Ba$_2$CuO$_{3+δ}$ (BCO), a high temperature superconducting cuprate with putative $d_{3z^2-r^2}$ ground state symmetry, we investigated its electronic structure by means of Cu $L_3$ x-ray absorption (XAS) and resonant inelastic x-ray scattering (RIXS) at the Cu $L_3$ edge on a polycrystalline sample. We show that the XAS profile of BCO is characterised by two peaks associated to inequivalent Cu sites, and that its RIXS response features a single, sharp peak associated to crystal-field excitations. We argue that these observations are only partially compatib…
Recent attempts at topological materials have revealed a large class of materials that show gapless surface states protected by time-reversal symmetry and crystal symmetries. Among them, topological insulating states protected by crystal symmetries, rather than time-reversal symmetry are classified as topological crystalline insulators. We computationally predict the signature of new three-dimensional topological crystalline insulating compounds of space group 139(I/4mmm). After conducting a full volume optimization process by allowing to rearrange of atomic positions and lattice parameters, t…
Dirac semimetals associated with bulk Dirac fermions are well-known in topological electronic systems. In sharp contrast, three-dimensional (3D) Dirac phonons in crystalline solids are still unavailable. Here we perform symmetry arguments and first-principles calculations to systematically investigate 3D Dirac phonons in all space groups with inversion symmetry. The results show that there are two categories of 3D Dirac phonons depending on their protection mechanisms and positions in momentum space. The first category originates from the four-dimensional irreducible representations at the hig…
Soft x-ray emission and absorption spectroscopy of the O K-edge are employed to investigate the electronic structure of wurtzite ZnO(0001). A quasiparticle band structure calculated within the GW approximation agrees well with the data, most notably with the energetic location of the Zn3d - O2p hybridized state and the anisotropy of the absorption spectra. Dispersion in the band structure is mapped using the coherent k-selective part of the resonant x-ray emission spectra. We show that a more extensive mapping of the bands is possible in the case of crystalline anisotropy such as that found in…
SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perp…
Two-dimensional (2D) topological crystalline insulators (TCIs) were recently predicted in thin films of the SnTe class of IV-VI semiconductors, which can host metallic edge states protected by mirror symmetry. As thickness decreases, quantum confinement effect will increase and surpass the inverted gap below a critical thickness, turning TCIs into normal insulators. Surprisingly, based on first-principles calculations, here we demonstrate that (001) monolayers of rocksalt IV-VI semiconductors XY (X=Ge, Sn, Pb and Y= S, Se, Te) are 2D TCIs with the fundamental band gap as large as 260 meV in mo…
Topological phases, especially topological crystalline insulators (TCIs), have been intensively explored observed experimentally in three-dimensional (3D) materials. However, the two-dimensional (2D) films are explored much less than 3D TCI, and even 2D topological insulators. Based on ab initio calculations, here we investigate the electronic and topological properties of 2D PbTe(001) few-layers. The monolayer and trilayer PbTe are both intrinsic 2D TCIs with a large band gap reaching 0.27 eV, indicating a high possibility for room-temperature observation of quantized conductance. The origin …
We report two new first-order Raman modes in the spectra of few-layer MoS$_2$ at 286~cm$^{-1}$ and 471~cm$^{-1}$ for excitation energies above 2.4~eV. These modes appear only in few-layer MoS$_2$; therefore their absence provides an easy and accurate method to identify single-layer MoS$_2$. We show that these modes are related to phonons that are not observed in the single layer due to their symmetry. Each of these phonons leads to several nearly degenerate phonons in few-layer samples. The nearly degenerate phonons in few-layer materials belong to two different symmetry representations, showi…
In the search for more efficient thermoelectric materials, scientists have placed high hopes in the possibility of enhancing the power factor using resonant states. In this study, we investigate theoretically the effects of randomly distributed resonant impurities on the power factor. Using the Chebyshev Polynomial Green's Function method, we compute the electron transport properties for very large systems (10 million atoms) with an exact treatment of disorder. The introduction of resonant defects can lead to a large enhancement of the power factor together with a sign inversion in the Seebeck…
Free electron laser-powered pulsed electron paramagnetic resonance (EPR) experiments performed at 240 GHz / 8.56 T on the crystalline organic radical BDPA reveal a tip-angle dependent resonant frequency. Frequency shifts as large as 11 MHz (45 ppm) are observed during a single Rabi oscillation. We attribute the frequency shifts to a "dressing" of the nutation by spin-spin interactions. A nonlinear semi-classical model which includes a temperature- and sample-geometry-dependent demagnetizing field reproduces experimental results. Because experiments are performed without a cavity, radiation dam…
Mechanical losses of crystalline silicon and calcium fluoride have been analyzed in the temperature range from 5 to 300 K by our novel mechanical spectroscopy method, cryogenic resonant acoustic spectroscopy of bulk materials (CRA spectrocopy). The focus lies on the interpretation of the measured data according to phonon-phonon interactions and defect induced losses in consideration of the excited mode shape.
ThTaN$_3$, a rare cubic perovskite nitride semiconductor, has been studied using {\it ab initio} methods. Spin-orbit coupling (SOC) results in band inversion and a band gap of 150 meV at the zone center. In spite of the trivial $Z_2$ indices, two pairs of spin-polarized surface bands cross the gap near the zone center, indicating that this system is a topological crystalline insulator with the mirror Chern number of $|{\cal C}_m|=2$ protected by the mirror and $C_4$ rotational symmetries. Additionally, SOC doubles the Seebeck coefficient, leading to a maximum of $\sim$400 $μ$V/K at 150 K for c…
Topological crystalline insulators are new states of matter in which the topological nature of electronic structures arises from crystal symmetries. Here we predict the first material realization of topological crystalline insulator in the semiconductor SnTe, by identifying its nonzero topological index. We predict that as a manifestation of this nontrivial topology, SnTe has metallic surface states with an even number of Dirac cones on high-symmetry crystal surfaces such as {001}, {110} and {111}. These surface states form a new type of high-mobility chiral electron gas, which is robust again…
We report on an infrared magneto-spectroscopy study of Pb$_{1-x}$Sn$_x$Se, a topological crystalline insulator. We have examined a set of samples, all in the inverted regime of electronic bands, with the tin composition varying from $x=0.2$ to $0.33$. Our analysis shows that the observed response, composed of a series of interband inter-Landau level excitations, can be interpreted and modelled using the relativistic-like Hamiltonian for three-dimensional massive Dirac electrons, expanded to include diagonal quadratic terms that impose band inversion. In our data, we have not found any clear si…
The search for topological systems has recently broadened to include random substitutional alloys, which lack the specific crystalline symmetries that protect topological phases, raising the question whether topological properties can be preserved, or are modified by disorder. To address this question, we avoid methods that assumed at the outset high (averaged) symmetry, using instead a fully-atomistic, topological description of alloy. Application to PbSe-SnSe alloy reveals that topology survives in an interesting fashion: (a) spatial randomness removes the valley degeneracy (splitting larger…
The physics related to Berry curvature is now a central research topic in condensed matter physics. The Berry curvature dipole (BCD) is a significant and intriguing condensed matter phenomenon that involves inversion symmetry breaking. However, the creation and controllability of BCDs have so far been limited to far below room temperature (RT) and non-volatile (i.e., ferroic) BCDs have not yet been discovered, hindering further progress in topological physics. In this work, we demonstrate a switchable and non-volatile BCD effect at RT in a topological crystalline insulator, Pb1-xSnxTe (PST), w…
The intra-crystalline diffusion of normal alkanes in LTL and ZSM-12 zeolite was experimentally studied via gravimetric measurements performed at different temperatures. A periodic dependence of the diffusion coefficient on the number of carbon atoms in alkane was detected, which is an experimental proof for resonant diffusion. The present observations were described on the base of the existing theory of the resonant diffusion and several important parameters of the alkane-zeolite interaction and zeolite vibrations were obtained. In the considered temperature region the diffusion coefficient fo…
The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we propose that the electronic properties of a free-standing nanomembrane of topological crystalline insulator (TCI) SnTe and Pb$_{1-x}$Sn$_x$(Se,Te) are highly tunable by engineering elastic strain and controlling membrane thickness, resulting in tunable band gap and giant piezoconductivity. Membrane thickness governs the hybridization of topological electronic states on opposite surfaces, while elastic strain can further modulate the hybridiz…
We perform systematic angle-resolved photoemission spectroscopic measurements on the lead tin telluride Pb1-xSnxTe pseudobinary alloy system. We show that the (001) crystalline surface, which is a crystalline surface symmetric about the (110) mirror planes of the Pb1-xSnxTe crystal, pos- sesses four metallic surface states within its surface Brillouin zone. Our systematic Fermi surface and band topology measurements show that the observed Dirac-like surface states lie on the symmetric momentum-space cuts. We further show that upon going to higher electron binding energies, the surface states' …
Based on first-principles calculations and symmetry analysis, we propose that a transition metal rutile oxide, in particular $β'$-PtO$_2$, can host a three-dimensional topological Dirac semimetal phase. We find that $β'$-PtO$_2$ possesses a linked nodal rings structure when spin-orbit coupling is neglected. Incorporating spin-orbit coupling gaps the nodal rings, while preserving a single pair of three-dimensional Dirac points protected by a screw rotation symmetry. This Dirac point is created by a band inversion of two $d$ bands, which is a realization of a DSM phase in correlated electron sys…
Recent discovery of superconductivity in CeRh$_2$As$_2$ clarified an unusual $H$-$T$ phase diagram with two superconducting phases [Khim et al. arXiv:2101.09522]. The experimental observation has been interpreted based on the even-odd parity transition characteristic of locally noncentrosymmetric superconductors. Indeed, the inversion symmetry is locally broken at the Ce site, and CeRh$_2$As$_2$ molds a new class of exotic superconductors. The low-temperature and high-field superconducting phase is a candidate for the odd-parity pair-density-wave state, suggesting a possibility of topological …
We investigate the anisotropic nature of magnetocrystalline coupling between the crystallographic and skyrmion crystal (SKX) lattices in the chiral magnet MnSi by magnetic field-angle resolved resonant ultrasound spectroscopy. Abrupt changes are observed in the elastic moduli and attenuation when the magnetic field is parallel to the [011] crystallographic direction. These observations are interpreted in a phenomenological Ginzburg-Landau theory that identifies switching of the SKX orientation to be the result of an anisotropic magnetocrystalline coupling potential. Our paper sheds new light o…
The Raman effect -- inelastic scattering of light by lattice vibrations (phonons) -- produces an optical response closely tied to a material's crystal structure. Here we show that resonant optical excitation of IR and Raman phonons gives rise to a Raman scattering effect that can induce giant shifts to the refractive index and induce new optical constants that are forbidden in the equilibrium crystal structure. We complete the description of light-matter interactions mediated by coupled IR and Raman phonons in crystalline insulators -- currently the focus of numerous experiments aiming to dyna…
Three-dimensional (3D) topological insulators (TIs) are new forms of quantum matter that are characterized by their insulating bulk state and exotic metallic surface state, which hosts helical Dirac fermions1-2. Very recently, BiTeCl, one of the polar semiconductors, has been discovered by angle-resolved photoemission spectroscopy to be the first strong inversion asymmetric topological insulator (SIATI). In contrast to the previously discovered 3D TIs with inversion symmetry, the SIATI are expected to exhibit novel topological phenomena, including crystalline-surface-dependent topological surf…
