In this paper, we present ab initio computer models of Cu-doped amorphous Ta2O5 , a promising candidate for Conducting Bridge Random Access Memory (CBRAM) memory devices, and study the structural, electronic, charge transport and vibrational properties based on plane-wave density functional methods. We offer an atomistic picture of the process of phase segregation/separation between Cu and Ta2O5 subnetworks. Electronic calculations show that the models are conducting with extended Kohn-Sham orbitals around the Fermi level. In addition to that, we also characterize the electronic transport using the Kubo-Greenwood formula modified suitably to calculate the space-projected conductivity (SPC). Our SPC calculations show that Cu clusters and under-coordinated Ta adjoining the Cu are the conduction-active parts of the network. We also report information about the dependence of the electrical conductivity on the connectivity of the Cu sub-matrix. Vibrational calculations for one of the models has been undertaken with an emphasis on localization and animation of representative modes.
A disorder-order transition from amorphous carbon (aC) to layered amorphous graphene (LAG) has been predicted using ab-initio methods. Amorphous carbon at densities close to the graphitic density show a strong proclivity to layer in NVT simulations near 3000K . Our calculations have shown that graphitization is strongly dependent on the simulation temperature and is not observed under 2500K. The origin of such a disorder-order transition has been studied using various structural analyses. Each layer of LAG is a layer of amorphous graphene (aG) including pentagons and heptagons in addition to h…
We discuss a novel approach that allows to obtain effective potentials from ab initio trajectories. Our method consists in fitting the weighted radial distribution functions obtained from the ab initio data with the ones obtained from simulations with the effective potential, and using the parameters of the latter as fitting variables. As a case study, we consider the example of amorphous silica, a material that is highly relevant in the field of glass science as well as in geology. Our approach is able to obtain an effective potential that gives a better description with respect to structural…
Polymeric nitrogen with single bonds can be created from the molecular form at high pressure and due to large energy difference between triple and single bonds it is interesting as energetic material. Its structure and properties are, however, still not well understood. We studied amorphous nitrogen by \textit{ab initio} simulations, employing molecular dynamics and evolutionary algorithms. Amorphous nitrogen was prepared at pressure of 120 GPa by quenching from hot liquid, by pressure-induced amorphization of molecular crystal and by evolutionary search. All three amorphous forms were found t…
We present an ab initio calculation of the DC conductivity of amorphous silicon and hydrogenated amorphous silicon. The Kubo-Greenwood formula is used to obtain the DC conductivity, by thermal averaging over extended dynamical simulation. Its application to disordered solids is discussed. The conductivity is computed for a wide range of temperatures and doping is explored in a naive way by shifting the Fermi level. We observed the Meyer-Neldel rule for the electrical conductivity with E_MNR = 0.06 eV and a temperature coefficient of resistance, TCR ~ -2.0% K^-1 for a-Si:H. In general, experime…
We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation with an in situ technique, evidencing the growth of an absorption signal whose profile is characterized by two main peaks near 4.5eV and 5.7eV and whose shape depends on time. Electron spin resonance measurements performed ex situ a few hours after the end of exposure permit to complete the information acquired by optical absorption by detection of the param…
We investigated the origin of ferromagnetism in epitaxially grown Mn-doped Ge thin films. Using low-temperature molecular beam epitaxy, Mn-doped Ge films were successfully grown without precipitation of ferromagnetic Ge-Mn intermetallic compounds, such as Mn5Ge3. Magnetic circular dichroism measurements revealed that the epitaxially grown Mn-doped Ge films exhibited clear ferromagnetic behavior, but the Zeeman splitting observed at the critical points was not induced by the s,p-d exchange interactions. High-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy an…
We perform an {\it ab initio} modeling of amorphous copper-doped alumina (a-Al$_2$O$_3$:Cu), a prospective memory material based on resistance switching, and study the structural origin of electronic conduction in this material. We generate molecular dynamics based models of a-Al$_2$O$_3$:Cu at various Cu-concentrations and study the structural, electronic and vibrational properties as a function of Cu-concentration. Cu atoms show a strong tendency to cluster in the alumina host, and metallize the system by filling the band gap uniformly for higher Cu-concentrations. We also study thermal fluc…
Ferromagnetism above room temperature was observed in Cr-doped hydrogenated amorphous silicon films deposited by rf magnetron-sputtering. Structure analysis reveals that films are amorphous without any detectable precipitates up to the solubility limit 16 atomic percentages of Cr. Experimental results suggest that hydrogenation has a dramatic influence on magnetic properties, electrical conductivity and carrier concentration in the thin films. Pronounced anomalous Hall effect and magnetization curve both suggest the origin of the ferromagnetism may arises from percolation of magnetic polarons.
We have studied the photoinduced transformation of small rings (3-membered) in amorphous silica by Car-Parrinello simulations. The process of ring opening leading to the formation of a couple of paramagnetic centers, namely an E' and a non-bridging-oxygen hole center (NBOHC), has been proposed experimentally to occur in silica exposed to F2 laser irradiation (at 7.9 eV). By using a new scheme for the simulation of rare events in ab-initio molecular dynamics (Iannuzzi, Laio and Parrinello, Phys. Rev. Lett. 90, 238303 (2003)), we have identified the transformation path for the opening of a 3-mem…
We review our previous work on the dynamic structure factor S(k,omega) of liquid Ge (l-Ge) at temperature T = 1250 K, and of amorphous Ge (a-Ge) at T = 300 K, using ab initio molecular dynamics [Phys. Rev. B67, 104205 (2003)]. The electronic energy is computed using density-functional theory, primarily in the generalized gradient approximation, together with a plane wave representation of the wave functions and ultra-soft pseudopotentials. We use a 64-atom cell with periodic boundary conditions, and calculate averages over runs of up to 16 ps. The calculated liquid S(k,omega) agrees qualitativ…
Since the pioneering efforts of Duwez and coworkers in 1965, when a solid amorphous phase of Pd-Si ($a$-PdSi) was obtained in the vicinity of the eutectic concentration, much work has been done. However, some points related to the atomic structures remain to be systematized. In this work, 8 amorphous Pd$_{100-c}$Si$_{c}$ alloys (c = 2.5, 5, 10, 13.34, 15, 17.5, 20, and 22 at %) were generated by molecular dynamics $ab$ $initio$ simulations; the short-range structure is analyzed using several correlation functions, like Pair Distribution Functions, reduced Pair Distribution Functions, Plane Ang…
We report results of ab initio constant-pressure molecular dynamics simulations of sulfur compression leading to structural transition and pressure-induced amorphization. Starting from the orthorhombic S-I phase composed of S$_8$ ring molecules we find at room temperature and pressure of 20 GPa a transformation to monoclinic phase where half of the molecules develop a different conformation. Upon further compression, the monoclinic phase undergoes pressure-induced amorphization into an amorphous phase, in agreement with experiments. We study the dynamics of the amorphization transition and inv…
Boron doped amorphous conducting carbon films show MI transition induced by doping. In this paper we discuss the ac conductivity of the films, which lie on the insulating side of MI transition. The ac conductivity data is analyzed as a function of frequency as well as temperature for both real as well as imaginary part of the conductivity data. The ac conductivity of these samples shows enhanced interaction effect at low temperature. The conduction mechanism at high frequency and at low temperature is due to the tunneling mechanism. At intermediate temperatures and at moderate frequencies, the…
Boron nitride (BN) is a structurally versatile insulator since it can be found in several crystalline structures with interesting mechanical and electrical properties, making this material attractive for technological applications. Seeking to improve its features, experimental and simulational studies for the amorphous phase (a-BN) have been carried out by some groups, focusing on the electrical and structural properties, pressure-induced phase transformations, and hydrogenated a-BN. In this work two amorphous structures are computationally generated and studied using ab initio Molecular Dynam…
This paper presents an $ab$ $initio$ study of hydrogen dynamics inside nanometer-size voids in $a$-Si within the framework of the density-functional theory for a varying hydrogen load of 10 to 30 H atoms/void at the low and high temperature of 400 K and 700 K, respectively. Using the local density approximation and its generalized-gradient counterpart, the dynamics of hydrogen atoms inside the voids are examined with an emphasis on the diffusion of H atoms/molecules, and the resulting nanostructural changes of the void surfaces. The results from simulations suggest that the microstructure of t…
By employing $ab$ $initio$ molecular dynamics simulations at constant pressure, we investigated behavior of amorphous carbon dioxide between 0-100 GPa and 200-500 K and found several new amorphous forms. We focused on evolution of the high-pressure polymeric amorphous form known as a-carbonia on its way down to zero pressure, where it eventually converts into a molecular amorphous solid. During decompression, two nonmolecular amorphous forms with different proportion of three and four-coordinated carbons and two mixed molecular-nonmolecular forms were observed. Transformation from a-carbonia t…
Realistic models of amorphous ZrO2 are generated in a ``melt-and-quench'' fashion using ab-initio molecular dynamics in a plane-wave pseudopotential formulation of density-functional theory. The structural properties of the resulting amorphous models are analyzed, with special attention to coordination statistics. The vibrational and dielectric properties of one of these models are then investigated from first principles using linear-response methods. The electronic dielectric constant and Born effective charges are found to be very similar to those of the crystalline phases. Encouragingly, th…
The electronic and structural properties of (i) boron doped graphene sheets, and (ii) the chemisorption processes of hydrogen adatoms on the boron doped graphene sheets have been examined by {\it ab initio} total energy calculations.
The deposition of boron-doped amorphous carbon thin films on SiO2 substrate was achieved via a focused ion beam-assisted chemical vapor deposition of triphenyl borane (C18H15B) and triphenyl borate (C18H15BO3). The existence of boron in the deposited film from triphenyl borane, with a precursor temperature of 90 °C, was confirmed by a core level X-ray photoelectron spectroscopy analysis. The film exhibited a semiconducting behavior with a band gap of 285 meV. Although the band gap was decreased to 197 meV after an annealing process, the film was still semiconductor. Additionally, a drastic red…
We present a microscopic picture of silver dynamics in GeSe$_{3}$:Ag glass obtained from {\it ab initio} simulation. The dynamics of Ag is explored at two temperatures, 300K and 700K. In the relaxed network, Ag occupies bond centers between suitably separated host sites. At 700K, Ag motion proceeds via a trapping-release dynamics, between "super traps" or cages consisting of multiple bond-center sites in a small volume. Our work offers a first principles identification of trapping centers invoked in current theories, with a description of their properties. We compute the charge state of the Ag…
We calculate the dynamic structure factor S(k,omega) of liquid Ge (l-Ge) at temperature T = 1250 K, and of amorphous Ge (a-Ge) at T = 300 K, using ab initio molecular dynamics. The electronic energy is computed using density-functional theory, primarily in the generalized gradient approximation, together with a plane wave representation of the wave functions and ultra-soft pseudopotentials. We use a 64-atom cell with periodic boundary conditions, and calculate averages over runs of up to 16 ps. The calculated liquid S(k,omega) agrees qualitatively with that obtained by Hosokawa et al, using in…
Density functional theory (DFT) calculations are carried out to study the structure and electronic structure of amorphous zinc oxide (a-ZnO). The models were prepared by the "melt-quench" method. The models are chemically ordered with some coordination defects. The effect of trivalent dopants in the structure and electronic properties of a-ZnO is investigated. Models of a-X_0.375 Z_0.625 O (X=Al, Ga and In) were also prepared by the "melt- quench" method. The trivalent dopants reduce the four-fold Zn and O, thereby introducing some coordination defects in the network. The dopants prefer to bon…
We discuss the efficacy of evolutionary method for the purpose of structural analysis of amorphous solids. At present ab initio molecular dynamics (MD) based melt-quench technique is used and this deterministic approach has proven to be successful to study amorphous materials. We show that a stochastic approach motivated by Darwinian evolution can also be used to simulate amorphous structures. Applying this method, in conjunction with density functional theory (DFT) based electronic, ionic and cell relaxation, we re-investigate two well known amorphous semiconductors, namely silicon and indium…
The magnetic rare earth element gadolinium (Gd) was doped into thin films of amorphous carbon (hydrogenated \textit{a}-C:H, or hydrogen-free \textit{a}-C) using magnetron co-sputtering. The Gd acted as a magnetic as well as an electrical dopant, resulting in an enormous negative magnetoresistance below a temperature ($T'$). Hydrogen was introduced to control the amorphous carbon bonding structure. High-resolution electron microscopy, ion-beam analysis and Raman spectroscopy were used to characterize the influence of Gd doping on the \textit{a-}Gd$_x$C$_{1-x}$(:H$_y$) film morphology, compositi…
Atomic Structure of Amorphous Optical Coatings of TiO$_2$-doped GeO$_2$ by Grazing-Incidence Total X-ray Scattering Measurements
Kennesaw State University（肯尼索州立大学）；Northeastern University（东北大学）；Sungkyunkwan University（成均馆大学）；Colorado State University（科罗拉多州立大学）；Université de Montréal（蒙特利尔大学）；Stanford University（斯坦福大学）；SLAC National Accelerator Laboratory（SLAC国家加速器实验室）；Xerion Advanced Battery Corp.（Xerion先进电池公司）；California Institute of Technology（加州理工学院）
Following the finite-temperature ab initio calculation framework based on the relativistic disordered local moments, we computationally demonstrate the possibility of doping-enhanced coercivity at high-temperatures, taking YCo$_5$ as a working material in order to extract the $3d$-electron part of the electronic structure of the rare-earth permanent magnets. Alkaline-earth dopants are shown to be the candidates to realize the proposed phenomenon.
The magnetic and electrical transport properties of Mn-doped amorphous silicon (\textit{a-}Mn$_{x}$Si$_{1-x}$) thin films have been measured. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of $x$ (0.005-0.175) and the saturation moment is small. While all Mn atoms contribute to the electrical transport, only a small fraction (interstitial Mn$^{2+}$ states with $J$=$S$=5/2) contribute to the magnetization. The majority of the Mn atoms do not possess any magnetic moment, contrary to what is predicted by the Ludwig-Woodbury model for Mn in crystalline silicon. Unlike \text…
We have extended our experimentally constrained molecular relaxation technique (P. Biswas {\it et al}, Phys. Rev. B {\bf 71} 54204 (2005)) to hydrogenated amorphous silicon: a 540-atom model with 7.4 % hydrogen and a 611-atom model with 22 % hydrogen were constructed. Starting from a random configuration, using physically relevant constraints, {\it ab initio} interactions and the experimental static structure factor, we construct realistic models of hydrogenated amorphous silicon. Our models confirm the presence of a high frequency localized band in the vibrational density of states due to Si-…
The paper presents an $ab$ $initio$ study of temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon. By using large $a$-Si models, obtained from classical molecular-dynamics simulations, with a realistic void-volume density of 0.2%, the dynamics of Si and H atoms on the surface of the nanometer-size cavities were studied and their effects on the shape and size of the voids were examined using first-principles density-functional simulations. The results from $ab$ $initio$ calculations were compared with those obtained from using the modified Stillinger-Weber po…
We present the first ab-initio band-theory-based description of spin-compensated polarons (known as Zhang-Rice singlets) in a hole-doped cuprate, specifically one-dimensional Ca_{2+x} Y_{2-x} Cu_5 O_10. Zhang-Rice singlets are many-particle configurations relevant to the exotic behavior of hole-doped cuprates, stemming from spontaneous charge localization. They appear in our case-study material above a threshold doping, successively turning the insulating undoped antiferromagnet into a gap insulator, a singlet-rich metallic paramagnet, and finally, a singlet-saturated insulating diamagnet.
Based on first-principles calculation, it has been predicted that the magnetic anisotropy energy (MAE) in Co-doped ZnO (Co:ZnO) depends on electron-filling. Results show that the charge neutral Co:ZnO presents a "easy plane" magnetic state. While modifying the total number of electrons, the easy axis rotates from in-plane to out-of-plane. The alternation of the MAE is considered to be the change of the ground state of Co ion, resulting from the relocating of electrons on Co d-orbitals with electron-filling.
I discuss the properties of electron states in amorphous Si based on large scale calculations with realistic several thousand atom models. A relatively simple model for the localized to extended (Anderson) transition is reviewed. Then, the effect of thermal disorder on localized electron states is considered. It is found that under readily accessible conditions, localized (midgap or band tail) states and their conjugate energies may fluctuate dramatically. The possible importance of non-adiabatic atomic dynamics to doped or photo-excited systems is briefly discussed.
We calculate the photoemission spectra of suspended and epitaxial doped graphene using an ab initio cumulant expansion of the Green's function based on the GW self-energy. Our results are compared to experiment and to standard GW calculations. For doped graphene on a silicon carbide substrate, we find, in contrast to earlier calculations, that the spectral function from GW only does not reproduce experimental satellite properties. However, ab initio GW plus cumulant theory combined with an accurate description of the substrate screening results in good agreement with experiment, but gives no p…
Intrinsic Defects in Amorphous Optical Coatings of TiO$_2$-doped GeO$_2$ for Gravitational-wave Detectors
Kennesaw State University（肯尼索州立大学）；Sungkyunkwan University（成均馆大学）；Stanford University（斯坦福大学）；Colorado State University（科罗拉多州立大学）；Ohio University（俄亥俄大学）；California Institute of Technology（加州理工学院）
Using ab-initio calculations, we study the electronic structure of gallium-doped germanium, which was found recently to be a superconductor, with a critical temperature of 0.5 Kelvins, and a particularly low density of Cooper pairs. The calculations of the electronic properties reveal that no sign of an impurity band is observed, and that the Fermi level lies in the valence band of Germanium. Moreover, the calculation of the phonon frequencies shows that a new mode associated to the Ga atom is appearing, around 175$ cm-1.
The current generation of advanced gravitational wave detectors utilize titania-doped tantala/silica multilayer stacks for their mirror coatings. The properties of the low-refractive-index silica are well known; however, in the absence of detailed direct measurements, the material parameters of Young's modulus and coefficient of thermal expansion (CTE) of the high refractive index material, titania-doped tantala, have been assumed to be equal to values measured for pure tantala coatings. In order to ascertain the true values necessary for thermal noise calculations, we have undertaken measurem…
The PEO3:LiCF3SO3 polymer electrolyte has attracted significant research due to its enhanced stability at the lithium/polymer interface of high conductivity polymer batteries. Experimental studies have shown that, depending on the preparation conditions, both the PEO3:LiCF3SO3 crystalline complex and the PEO3:LiCF3SO3 amorphous phase can be formed. However, previous theoretical investigations focused on the short chain amorphous PEO3:LiCF3SO3 system. We report ab initio density-functional-theory calculations of crystalline PEO3:LiCF3SO3. The calculated results about the bonding configuration, …
Because of their unique structure, it has been proposed that carbon nanotube ropes may well provide an ideal container for the storage of molecular hydrogen. Indeed, there has been some experimental evidence of enhanced hydrogen uptake in doped Li and other alkali metal systems [Chen et al, Science 285, 91 (1999)]. We have therefore addressed this issue of hydrogen storage in Li-doped graphite and carbon nanotube systems theoretically with ab initio simulations. Our results find no evidence for such enhanced storage, based on the induced structural changes. In addition, we have also investigat…
Localized basis ab initio molecular dynamics simulation within the density functional framework has been used to generate realistic configurations of amorphous silicon carbide (a-SiC). Our approach consists of constructing a set of smart initial configurations that conform essential geometrical and structural aspects of the materials obtained from experimental data, which is subsequently driven via first-principles force-field to obtain the best solution in a reduced solution space. A combination of a priori information (primarily structural and topological) along with the ab-initio optimizati…
The local magnetic moment of Ti:ZnO is calculated from first principles by using the corrected-band-gap scheme (CBGS). The results shows that the system is magnetic with the magnetization of 0.699 $μ_B$ per dopant. The origin of the local magnetic moment is considered to be the impurity band partially occupied by the donor electrons in the conduction band. Further, the impacts of applying Hubbard U to Ti-d orbital on the magnetic moment have been investigated.
We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device applications. The Bi$_2$Se$_3$ films are bonded to a-SiO$_2$ mediated by van der Waals interactions. Upon interaction with the substrate, the Bi$_2$Se$_3$ topological surface and interface states remain present, however the degeneracy between the Dirac-like cones is broken. The energy separation between the two Dirac-like cones increases with the number of Bi$_2$Se…
First-principles alloy theory, formulated within the exact muffin-tin orbitals method in combination with the coherent-potential approximation, is used to study the mechanical properties of ferromagnetic body-centered cubic (bcc) Fe$_{1-x}$M$_x$ alloys (M=Mn or Ni, $0\le x \le 0.1$). We consider several physical parameters accessible from \emph{ab initio} calculations and their combinations in various phenomenological models to compare the effect of Mn and Ni on the properties of Fe. Alloying is found to slightly alter the lattice parameters and produce noticeable influence on elastic moduli. …
SmCo5 permanent magnets exhibit enormous uniaxial magnetocrystalline anisotropy energy and have a high Curie temperature. However, a low energy product presents a significant drawback in the performance of SmCo5 permanent magnets. In order to increase the energy product in SmCo5, we propose substituting fixed amount of cobalt with iron in a new magnet, SmFe3CoNi, where inclusion of nickel metal makes this magnet thermodynamically stable. We further discuss some basic theoretical magnetic properties of the SmCo5 compound.
The way doping affects the spin wave stiffness and the exchange stiffness of permalloy (Py) is investigated via ab-initio calculations, using the Korringa-Kohn-Rostoker (KKR) Green function formalism. By considering various types of dopants of different nature (V, Gd, and Pt), we are able to draw general conclusions. To describe the trends of the stiffness with doping is it sufficient to account for the exchange coupling between nearest neighbors. The polarizability of the impurities is not an important factor for the spin wave stiffness. Rather, the decisive factor is the hybridization betwee…
We present an ab initio study of dopant-dopant interactions in beryllium-doped InGaAs. We consider defect formation energies of various interstitial and substitutional defects and their combinations. We find that all substitutional-substitutional interactions can be neglected. On the other hand, interactions involving an interstitial defect are significant. Specially, interstitial Be is stabilized by about 0.9/1.0 eV in the presence of one/two BeGa substitutionals. Ga interstitial is also substantially stabilized by Be interstitials. Two Be interstitials can form a metastable Be-Be-Ga complex …
We show that newly found BF3-doped polyaniline, though highly conducting, remains amorphous. Magnetic studies reveal many unusual properties, while suggesting that the intrinsic conductivity of this system is significantly larger than all other known forms of conducting polyaniline, establishing it as an interesting class of highly conducting amorphous polymer.
Transport properties of permalloy doped with V, Co, Pt, and Au are explored via ab-initio calculations. The Kubo-Bastin formula is evaluated within the fully relativistic Korringa-Kohn-Rostoker Green function formalism. Finite temperature effects are treated by means of the alloy analogy model. It is shown that the fact that the host is disordered and not crystalline has a profound effect on how the conductivities characterizing the anomalous Hall effect and the spin Hall effect depend on the dopant concentration. Several relationships between quantities characterizing charge and spin transpor…
Monte Carlo simulations, supplemented by ab initio calculations, shed light into the energetics and thermodynamic stability of nanostructured amorphous carbon. The interaction of the embedded nanocrystals with the host amorphous matrix is shown to determine in a large degree the stability and the relative energy differences among carbon phases. Diamonds are stable structures in matrices with sp^3 fraction over 60%. Schwarzites are stable in low-coordinated networks. Other sp^2-bonded structures are metastable.
In this paper, we review some recent work on amorphous materials using current "first principles" electronic structure/molecular dynamics techniques. The main theme of the paper is to emphasize new directions in the use of such ab initio methods. Some of these, being quite new, need development, but we believe have promise for solving new and important kinds of problems in the physics of glassy and amorphous materials. Initially, we discuss first principles calculations in broad outline and comment on the various approximations in common use. Then, we describe methods for forming a computer mo…
Thermoelectric properties of the system La$_2$NiO$_{4+δ}$ have been studied ab initio. Large Seebeck coefficient values are predicted for the parent compound, and to some extent remain in the hole-doped metallic phase, accompanied of an increase in the conductivity. This system, due to its layered structure would be a suitable candidate for an improvement of its thermoelectric figure of merit by nanostructurization in thin films, that has already been shown to increase the electrical conductivity ($σ$). Our calculations show that in the region around La$_2$NiO$_{4.05}$ the system has a large t…
