The ever-increasing demand for high speed and large bandwidth has made photonic systems a leading candidate for the next generation of telecommunication and radar technologies. The photonic platform enables high performance while maintaining a small footprint and provides a natural interface with fiber optics for signal transmission. However, producing sharp, narrow-band filters that are competitive with RF components has remained challenging. In this paper, we demonstrate all-silicon RF-photonic multi-pole filters with $\sim100\times$ higher spectral resolution than previously possible in silicon photonics. This enhanced performance is achieved utilizing engineered Brillouin interactions to access long-lived phonons, greatly extending the available coherence times in silicon. This Brillouin-based optomechanical system enables ultra-narrow (3.5 MHz) multi-pole response that can be tuned over a wide ($\sim10$ GHz) spectral band. We accomplish this in an all-silicon optomechanical waveguide system, using CMOS compatible fabrication techniques. In addition to bringing greatly enhanced performance to silicon photonics, we demonstrate reliability and robustness, necessary to transition silicon-based optomechanical technologies from the scientific bench-top to high-impact field-deployable technologies.
We experimentally demonstrate tunable, highly-stable frequency combs with high repetition-rates using a single, charge injection based silicon PN modulator. In this work, we demonstrate combs in the C-band with over 8 lines in a 20-dB bandwidth. We demonstrate continuous tuning of the center frequency in the C-band and tuning of the repetition-rate from 7.5GHz to 12.5GHz. We also demonstrate through simulations the potential for bandwidth scaling using an optimized silicon PIN modulator. We find that, the time varying free carrier absorption due to carrier injection, an undesirable effect in d…
We experimentally demonstrate wide-band (>100 THz) frequency down-conversion of near-infrared (NIR) femtosecond-scale pulses from an Er:fiber laser to the mid-infrared (MIR) using four-wave-mixing (FWM) in photonic-chip silicon-nitride waveguides. The engineered dispersion in the nanophotonic geometry, along with the wide transparency range of silicon nitride, enables large-detuning FWM phase-matching and results in tunable MIR from 2.6-3.6 um on a single chip with 100-pJ-scale pump-pulse energies. Additionally, we observe > 20 dB broadband parametric gain for the NIR pulses when the FWM proce…
We propose and demonstrate a self-coupled microring resonator for resonance splitting by mutual mode coupling of cavity mode and counter-propagating mode in Silicon-on-Insulator platform The resonator is constructed with a self-coupling region that can excite counter-propagating mode. We experimentally study the effect of self-coupling on the resonance splitting, resonance extinction, and quality-factor evolution and stability. Based on the coupling, we achieve 72% of FSR splitting for a cavity with FSR 2.1 nm with < 5% variation in the cavity quality factor. The self-coupled resonance splitti…
We present design, fabrication and characterization of a MEMS VCSEL which utilizes a silicon-on-insulator wafer for the microelectromechanical system and encapsulates the MEMS by direct InP wafer bonding, which improves the protection and control of the tuning element. This procedure enables a more robust fabrication, a larger free spectral range and facilitates bidirectional tuning of the MEMS element. The MEMS VCSEL device uses a high contrast grating mirror on a MEMS stage as the bottom mirror, a wafer bonded InP with quantum wells for amplification and a deposited dielectric DBR as the top…
Room-temperature polariton repulsion and ultra-strong coupling for a non-trivial topological one-dimensional tunable Fibonacci-conjugated porous-Silicon photonic quasi-crystal showing quasi bound-states-in-the-continuum
Here, we demonstrate a spectrally broadband, GHz-fast Mach-Zehnder interferometeric modulator, exhibiting a miniscule VpL of 95 V-um, deploying a sub-wavelength short electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics.
Si photonics has an immense potential for the development of compact and low-loss opto-electronic oscillators (OEO), with applications in radar and wireless communications. However, current Si OEO have shown a limited performance. Si OEO relying on direct conversion of intensity modulated signals into the microwave domain yield a limited tunability. Wider tunability has been shown by indirect phase-modulation to intensity-modulation conversion, requiring precise control of the phase-modulation. Here, we propose a new approach enabling Si OEOs with wide tunability and direct intensity-modulatio…
Electrically driven single-photon sources are essential for building compact, scalable and energy-efficient quantum information devices. Recently, color centers in SiC emerged as promising candidates for such nonclassical light sources. However, very little is known about how to control, dynamically tune and switch their single-photon electroluminescence (SPEL), which is required for efficient generation of single photons on demand. Here, we propose and theoretically demonstrate a concept of a gate-tunable single-photon emitting diode, which allows not only to dynamically tune the SPEL rate in…
We report a fully integrated microwave photonic passband filter on a silicon photonic chip. The on-chip integrated microwave photonic filter (IMPF) consists of a high-speed phase modulator (PM), a thermally tunable high-Q micro-disk resonator (MDR), and a high-speed photodetector (PD). The bandpass filtering function of the IMPF is implemented based on phase modulation and phase-modulation to intensity-modulation conversion, to translate the spectral response of an optical filter, which is the MDR in the IMPF, to the spectral response of a microwave filter. By injecting a CW light from a laser…
We evaluate the transient response of an optically tunable meta-atom composed of an electric inductor-capacitor resonator that is loaded with a piece of high-resistivity silicon and perform a proof-of-concept experiment to demonstrate the storage and release of electromagnetic waves using this meta-atom in the microwave region. The transient time of the meta-atom immediately after commencing laser light illumination of the silicon in the meta-atom is found to be inversely proportional to the incident laser power. The transmittance of the meta-atom at the resonance frequency increases to ten ti…
Visible and near-infrared spectrum photonic integrated circuits are quickly becoming a key technology to address the scaling challenges in quantum information and biosensing. Thus far, integrated photonic platforms in this spectral range have lacked integrated photodetectors. Here, we report the first silicon nitride-on-silicon waveguide photodetectors that are monolithically integrated in a visible light photonic platform on silicon. Owing to a leaky-wave silicon nitride-on-silicon design, the devices achieved a high external quantum efficiency of > 60% across a record wavelength span from $λ…
As the optical analogue to integrated electronics, integrated photonics has already found widespread use in data centers in the form of optical interconnects. As global network traffic continues its rapid expansion, the power consumption of such circuits becomes a critical consideration. Electrically tunable devices in photonic integrated circuits contribute significantly to the total power budget, as they traditionally rely on inherently power-consuming phenomena such as the plasma dispersion effect or the thermo-optic effect for operation. Here, we demonstrate ultra-low-power refractive inde…
Automatic reconfiguration of optical filters is the key to novel flexible RF photonic receivers and Software Defined Radios (SDRs). Although silicon photonics (SiP) is a promising technology platform to realize such receivers, process variations and lack of in-situ tuning capability limits the adoption of SiP filters in widely-tunable RF photonic receivers. To address this issue, this work presents a first `in-situ' automatic reconfiguration algorithm and demonstrates a software configurable integrated optical filter that can be reconfigured on-the-fly based on user specifications. The present…
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables reconfigurable and nonvolatile NAND or OR operation in one device. The device for the spin XOR gate consists of three iron (Fe)/cobalt (Co)/magnesium oxide (MgO) electrodes, i.e., two input and one output electrodes. Spins are injected into the Si channel from the input electrodes whose spin angular momentum corresponds to the binary input 1 or 0. The spin drift…
We develop a thermally tunable hybrid photonic platform comprising gallium arsenide (GaAs) photonic crystal cavities, silicon nitride (SiN$_x$) grating couplers and waveguides, and chromium (Cr) microheaters on an integrated photonic chip. The GaAs photonic crystal cavities are evanescently connected to a common bus waveguide, separating the computation and communication layers. The microheaters are designed to continuously and reversibly tune distant photonic crystal cavities to a common resonance. This architecture can be implemented in a coherent optical network for dedicated optical comput…
Coherent optomechanical interaction between acoustic and optical waves known as stimulated Brillouin scattering (SBS) can enable ultra-high resolution signal processing and narrow linewidth lasers important for next generation wireless communications, precision sensing, and quantum information processing. While SBS has recently been studied extensively in integrated waveguides, many implementations rely on complicated fabrication schemes, using suspended waveguides, or non-standard materials such as As$_2$S$_3$. The absence of SBS in standard and mature fabrication platforms prevents large-sca…
We report a tunable optical filter based on phase change material $Ge_{2}Sb_{2}Te_{5}$ embedded in a silicon microring resonator. The high thermo-optic coefficient of $Ge_{2}Sb_{2}Te_{5}$ in amorphous phase enables tuning of resonance wavelength in broad range with a very small active volume. The low-loss indium-tin-oxide electrodes are employed to induce Joule heating in $Ge_{2}Sb_{2}Te_{5}$-Si active waveguide region. The electrically induced heating in the active region alters the effective refractive index of hybrid microring resulting in a wavelength tuning of 1.04 nm for an applied volta…
Fano resonance is widely discussed in designing novel terahertz components, such as sensors, filters, modulators, and group delay modules. Usually, high quality (Q) factor and flexible tunability of Fano resonance are key requirements for these applications. Here, we present tunable terahertz Fano resonance with a Q factor of 2095 at 0.439 THz in coupled terahertz whispering-gallery-mode resonators (WGMRs). Coupling between a relatively low Q (578) quartz ring and a high Q (2095) silicon ring is employed to generate the Fano resonance. The resonant frequency of the Fano resonance can be active…
We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS foundry, enables scalable active photonic integrated circuits for visible wavelengths, and the piezoelectric actuation functions without performance degradation down to cryogenic temperatures. As an example of the potential of the platform, we demonstrate a compact (~40 μm diameter) silicon nitride ring resonator modulator operating at 780 nm with intrinsic…
We report a silicon nitride RF photonic notch filter with unprecedented performance including 8 dB of RF gain, record-low noise figure of 15.6 dB, and spurious-free dynamic range of 116 dB while achieving an ultra-deep rejection of beyond 50 dB in the stopbands.
We demonstrate for the first time, to the best of our knowledge, reconfigurable and real-time orthogonal time-domain demultiplexing of coherent multilevel Nyquist signals in silicon photonics. No external pulse source is needed and frequencytime coherence is used to sample the incoming Nyquist OTDM signal with orthogonal sinc-shaped Nyquist pulse sequences using Mach-Zehnder modulators. All the parameters such as bandwidth and channel selection are completely tunable in the electrical domain. The feasibility of this scheme is demonstrated through a demultiplexing experiment over the entire C-b…
