Topological superconductivity in a van der Waals heterostructure
Shawulienu Kezilebieke, Md Nurul Huda, Viliam Vaňo, Markus Aapro, Somesh C. Ganguli, Orlando J. Silveira, Szczepan Głodzik, Adam S. Foster, Teemu Ojanen, Peter Liljeroth
The designer approach has become a new paradigm in accessing novel quantum phases of matter. Moreover, the realization of exotic states such as topological insulators, superconductors and quantum spin liquids often poses challenging or even contradictory demands for any single material. For example, it is presently unclear if topological superconductivity, which has been suggested as a key ingredient for topological quantum computing, exists at all in any naturally occurring material . This problem can be circumvented by using designer heterostructures combining different materials, where the desired physics emerges from the engineered interactions between the different components. Here, we employ the designer approach to demonstrate two major breakthroughs - the fabrication of van der Waals (vdW) heterostructures combining 2D ferromagnetism with superconductivity and the observation of 2D topological superconductivity. We use molecular-beam epitaxy (MBE) to grow two-dimensional islands of ferromagnetic chromium tribromide (CrBr$_3$) on superconducting niobium diselenide (NbSe$_2$) and show the signatures of one-dimensional Majorana edge modes using low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The fabricated two-dimensional vdW heterostructure provides a high-quality controllable platform that can be integrated in device structures harnessing topological superconductivity. Finally, layered heterostructures can be readily accessed by a large variety of external stimuli potentially allowing external control of 2D topological superconductivity through electrical, mechanical, chemical, or optical means.
The emergence of a topological superconducting state in van der Waals heterostructures provides a new platform for exploring novel strategies to control topological superconductors. In particular, impurities in van der Waals heterostructures, generically featuring a moire pattern, can potentially lead to the unique interplay between atomic and moire length scales, a feature absent in generic topological superconductors. Here we address the impact of non-magnetic impurities on a topological moire superconductor, both in the weak and strong regime, considering both periodic arrays and single imp…
Research on graphene and other two-dimensional atomic crystals is intense and likely to remain one of the hottest topics in condensed matter physics and materials science for many years. Looking beyond this field, isolated atomic planes can also be reassembled into designer heterostructures made layer by layer in a precisely chosen sequence. The first - already remarkably complex - such heterostructures (referred to as 'van der Waals') have recently been fabricated and investigated revealing unusual properties and new phenomena. Here we review this emerging research area and attempt to identif…
The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. Given that any passivated, dangling bond-free surface will interact with another via vdW forces, the vdW heterostructure concept can be extended to include the integration of 2D materials with non-2D materials that adhere primarily through noncovalent interactions. In this review, we present a succinct and critical survey of emerging mixed-dimensional (2D + nD, where n is 0, 1 or 3) heterostructure devices. By comparing…
We present a phenomenological theory for coupled spin-charge dynamics in magnetic van der Waals heterostructures. The system studied consists of a layered antiferromagnet inserted into a capacitive vdW heterostructure. It has been recently demonstrated that charge doping in such layered antiferromagnets can modulate the strength, and even the sign, of exchange coupling between the layer magnetizations. This provides a mechanism for electrically generating magnetization dynamics. The central result we predict here is that the magnetization dynamics reciprocally results in inducing charge dynami…
Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be heterto-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS2 on top of suspended single-, bi-, tri- and four-layer (1L to…
Excitons dominate the optics of atomically-thin transition metal dichalcogenides and 2D van der Waals heterostructures. Interlayer 2D excitons, with an electron and a hole residing in different layers, form rapidly in heterostructures either via direct charge transfer or via Coulomb interactions that exchange energy between layers. Here, we report prominent intertube excitonic effects in quasi-1D van der Waals heterostructures consisting of C/BN/MoS$_2$ core/shell/skin nanotubes. Remarkably, under pulsed infrared excitation of excitons in the semiconducting CNTs we observed a rapid (sub-picose…
The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With new 2D materials, truly 2D physics has started to appear (e.g. absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc). Novel heterostructure devices are also starting to appear - tunneling transistors, resonant tunneling diodes, light emitting diodes, etc. Composed from individual 2D crystals, such devices utilize the properties of those crystals to create functionalities that are not accessible to us in other heterostructures. We re…
Stacked van der Waals (vdW) heterostructures where semi-conducting two-dimensional (2D) materials are contacted by overlayed graphene electrodes enable atomically-thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS2 devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. We can trace this behavior to the stacking-dependent response of the contact region to the capacitive electric field induced by the gate. The contact resistance is a central parameter and our observation e…
The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces between the individual two-dimensional materials which would affect device performance. We present here a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nit…
The large oscillator strength of excitons in transition metal dichalcogenide layers facilitates the formation of exciton-polariton resonances for monolayers and van-der-Waals heterostructures embedded in optical microcavities. Here, we show, that locally changing the number of layers in a WSe2/hBN/WSe2 van-der-Waals heterostructure embedded in a monolithic, high-quality-factor cavity gives rise to a local variation of the coupling strength. This effect yields a polaritonic stair case potential, which we demonstrate at room temperature. Our result paves the way towards engineering local polarit…
Assembling different two-dimensional (2D) crystals, covering a very broad range of properties, into van der Waals (vdW) heterostructures enables the unprecedented possibilities for combining the best of different ingredients in one objective material. So far, metallic, semiconducting, and insulating 2D crystals have been used successfully in making functional vdW heterostructures with properties by design. Here, we expand 2D superconducting crystals as a building block of the vdW hererostructures. A one-step growth of large-scale high-quality vdW heterostructures of graphene and 2D superconduc…
We predict angle-dependent superfluidity for a new class of 2D materials -- transition metals trichalcogenides (TMTC). Within a mean-field approach superfluidity of indirect excitons in TMTC van der Waals heterostructures (vdWHs) is studied. We use different potentials for charged carriers interaction to analyze the influence of the screening on the studied phenomena. Our study demonstrates the angle-dependent superfluidity temperature in TMTC vdWHs: for a given density a maximum and minimum $T_c$ of superfluidity occurs along chain and $a$-directions, respectively. This work can guide experim…
Graphene constitutes one of the key elements in many functional van der Waals heterostructures. However, it has negligible optical visibility due to its monolayer nature. Here we study the visibility of graphene in various van der Waals heterostructures and include the effects of the source spectrum, oblique incidence and the spectral sensitivity of the detector to obtain a realistic model. A visibility experiment is performed at different wavelengths, resulting in a very good agreement with our calculations. This allows us to reliably predict the conditions for better visibility of graphene i…
We employ here a picosecond ultrasonic technique to study Van der Waals heterostructures. Temporal variation of the reflection coefficient of the Al film that covers Van der Waals hBN/WSe$_2$/hBN heterostructures on a sapphire substrate after the femtosecond laser pulse excitation is carefully measured using an interferometric technique with spatial resolution. The laser pulse generates a broadband sound wave packet in aluminum film propagating perpendicular to the plane direction and partially reflecting from the heterostructural interfaces. The demonstrated technique has enough sensitivity t…
A van der Waals heterostructure combined with intrinsic magnetism and topological orders have recently paved attractive avenues to realize quantum anomalous Hall effects. In this work, using first-principles calculations and effective model analysis, we propose that the robust quantum anomalous Hall states with sizable band gaps emerge in the van der Waals heterostructure of germanene/Cr$_2$Ge$_2$Te$_6$. This heterostructure possesses high thermodynamic stability, thus facilitating its experimental fabrication. Furthermore, we uncover that the proximity effect enhances the coupling between the…
Transition metal dichalcogenide heterostructures can host interlayer excitons (IXs), which consist of electrons and holes spatially separated in different layers. IXs possess permanent dipoles and have proven to offer a wealth of novel physics. We develop a discrete, random-walk model which includes annihilation and repulsion interactions among IXs. Using this model, we simulate the trapping of IXs in traps of different depths, densities, and shapes. Our results show that dipole-dipole interactions play an important role in regulating IX trapping. The effects of dipole interactions can be miti…
We consider the role of deformations in graphene heterostructures with hexagonal crystals (including strain, wrinkles and dislocations) on the geometrical properties of moire patterns characteristic for a pair of two incommensurate misaligned isostructural crystals. By, employing a phenomenological theory to describe generic moire perturbation in van der Waals heterostructures of graphene and hexagonal crystals we investigate the electronic properties of such heterostructure.
Van der Waals semiconductor heterostructures could be a platform to harness hot photoexcited carriers in the next generation of optoelectronic and photovoltaic devices. The internal quantum efficiency of hot-carrier devices is determined by the relation between photocarrier extraction and thermalization rates. Using \textit{ab-initio} methods we show that the photocarrier thermalization time in single-layer transition metal dichalcogenides strongly depends on the peculiarities of the phonon spectrum and the electronic spin-orbit coupling. In detail, the lifted spin degeneracy in the valence ba…
Understanding the growth mechanisms of two-dimensional (2D) van der Waals (vdW) heterostructures is of great importance in exploring their functionalities and device applications. A custom-built system integrating physical vapor deposition and optical microscopy/Raman spectroscopy was employed to study the dynamic growth processes of 2D vdW heterostructures in situ. This allows us to identify a new growth mode with a distinctly different growth rate and morphology from those of the conventional linear growth mode. We propose a model that explains the difference in morphologies and quantifies t…
Converting solar energy into chemical energy by splitting water is a promising means to generate a sustainable and renewable solution without detrimental environmental impact. The two-dimensional semiconductors serve as potential catalysts in this regard, and here we combine Janus transition-metal dichalcogenides (MoXY, X/Y = S, Se, Te) and graphitic carbon nitride in a van der Waals heterostructure. Within the first-principles calculations, we investigate the electronic, optical and excitonic properties that determine the photocatalytic activity. Due to the internal electric field, the photog…
Van der Waals materials can be easily combined in lateral and vertical heterostructures, providing an outstanding platform to engineer elusive quantum states of matter. However, a critical problem in material science is to establish tangible links between real materials properties and terms that can be cooked up on the model Hamiltonian level to realize different exotic phenomena. Our review aims to do precisely this: we first discuss, in a way accessible to the materials community, what ingredients need to be included in the hybrid quantum materials recipe, and second, we elaborate on the spe…
We report experimental measurements for ultrathin (< 15 nm) van der Waals heterostructures exhibiting external quantum efficiencies exceeding 50%, and show that these structures can achieve experimental absorbance > 90%. By coupling electromagnetic simulations and experimental measurements, we show that pn WSe2/MoS2 heterojunctions with vertical carrier collection can have internal photocarrier collection efficiencies exceeding 70%.
Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moiré superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly.
Two-dimensional (2D) transition-metal dichalcogenide (TMD) MX$_2$ (M = Mo, W; X= S, Se, Te) possess unique properties and novel applications. In this work, we perform first-principles calculations on the van der Waals (vdW) stacked MX$_2$ heterostructures to investigate their electronic, optical and transport properties systematically. We perform the so-called Anderson's rule to classify the heterostructures by providing the scheme of the construction of energy band diagrams for the heterostructure consisting of two semiconductor materials. For most of the MX$_2$ heterostructures, the conducti…
We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of \Mo* and hexagonal boron nitride (hBN). The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.
Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena in excitonic systems and developing excitonic devices operational at high temperatures. We present the observation of IXs at room temperature in van der Waals TMD heterostructures based on monolayers of MoS$_2$ separated by atomically thin hexagonal boron nitride. The IXs realized in the TMD heterostructure have lifetimes orders of magnitude longer than lif…
In van der Waals heterostructures, the periodic potential from the Moiré superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (Nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4° and 4.3° respectively. Our measurements reveal six replicas of graphene Dirac cones at the superlattice Brillouin zone (SBZ) centers. The size of the SBZ and its relative rotation angle to the graphene BZ are in good agreement with Moiré s…
Van der Waals heterostructures formed by stacking different types of 2D materials are attracting increasing attention due to new emergent physical properties such as interlayer excitons. Recently synthesized atomically thin indium selenide (InSe) and antimony (Sb) individually exhibit interesting electronic properties such as high electron mobility in the former and high hole mobility in the latter. In this work, we present a first-principles investigation on the stability and electronic properties of ultrathin bilayer heterostructures composed of InSe and Sb single layers. The calculated elec…
Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration…
We report on the experimental demonstration of atomically thin molybdenum disulfide (MoS2)-graphene van der Waals (vdW) heterostructure nanoelectromechanical resonators with ultrawide frequency tuning. With direct electrostatic gate tuning, these vdW resonators exhibit exceptional tunability, in general, Δf/f0 >200%, for continuously tuning the same device and the same mode (e.g., from ~23 to ~107MHz), up to Δf/f0 = 370%, the largest fractional tuning range in such resonators to date. This remarkable electromechanical resonance tuning is investigated by two different analytical models and fini…
Van der Waals heterostructures built by vertically stacked transition metal dichalcogenides (TMDs) exhibit a rich energy landscape including interlayer and intervalley excitons. Recent experiments demonstrated an ultrafast charge transfer in TMD heterostructures. However, the nature of the charge transfer process has remained elusive. Based on a microscopic and material-realistic exciton theory, we reveal that phonon-mediated scattering via strongly hybridized intervalley excitons governs the charge transfer process that occurs on a sub-100fs timescale. We track the time-, momentum-, and energ…
We develop a theory for interlayer tunneling in van der Waals heterostructures driven under a strong electromagnetic field, using graphene/{\it h}-BN/graphene as a paradigmatic example. Our theory predicts that strong anti-resonances appear at bias voltage values equal to an integer multiple of the light frequency. These features are found to originate from photon-assisted resonant tunneling transitions between Floquet sidebands of different graphene layers, and are unique to two-band systems due to the interplay of both intraband and interband tunneling transitions. Our results point to the p…
Van der Waals heterostructures have recently been identified as providing many opportunities to create new two-dimensional materials, and in particular to produce materials with topologically interesting states. Here we show that it is possible to create such heterostructures with multiple topological phases in a single nanoscale island. We discuss their growth within the framework of diffusion-limited aggregation, the formation of moiré patterns due to the differing crystallographies of the materials comprising the heterostructure, and the potential to engineer both the electronic structure a…
Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined with microscopic many-particle theory to reveal the relevant microscopic charge transfer channels in epitaxial WS$_2$/graphene heterostructures. We find that the timescale for efficient ultrafast charg…
Van der Waals heterostructures formed by stacking different atomically thin layered materials have emerged as the sought-after device platform for electronic and optoelectronic applications. Determining the spatial extent of all the encapsulated components in such vertical stacks is key to optimal fabrication methods and improved device performance. Here we employ electrostatic force microscopy as a fast and non-invasive microscopic probe that provides compelling images of two dimensional layers buried over 30 nm below the sample surface. We demonstrate the versatility of the technique by stud…
The multi-scale computational method of combining first-principles calculation and finite element electromagnetic simulations is used to study plasmon-enhanced interlayer charge transfer (ICT) exciton of 2D lateral and van der Waals MoS2/WS2 heterostructure with 2H phase. The weak ICT excitons are observed in the 2H lateral and van der Waals MoS$_2$/WS$_2$ heterostructures. Theoretical results reveal the physical principle of plexciton resulting from strong coupling between plasmonic and ICT exciton. The weak CT exciton can be strongly enhanced by metal plasmon, can provide a new way to observ…
In van der Waals heterostructures, electronic bands of two-dimensional (2D) materials, their nontrivial topology, and electron-electron interactions can be dramatically changed by a moire pattern induced by twist angles between different layers. Such process is referred to as twistronics, where the tuning of twist angle can be realized through mechanical manipulation of 2D materials. Here we demonstrate an experimental technique that can achieve in situ dynamical rotation and manipulation of 2D materials in van der Waals heterostructures. Using this technique we fabricated heterostructures whe…
Vertically stacked van der Waals heterostructures constitute a promising platform for providing tailored band alignment with enhanced excitonic systems. Here we report observations of neutral and charged interlayer excitons in trilayer WSe2-MoSe2-WSe2 van der Waals heterostructures and their dynamics. The addition of a WSe2 layer in the trilayer leads to significantly higher photoluminescence quantum yields and tunable spectral resonance compared to its bilayer heterostructures at cryogenic temperatures. The observed enhancement in the photoluminescence quantum yield is due to significantly la…
The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI3 and a monolayer of WSe2. We observe unprecedented control of the spin and valley pseudospin in WSe2, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe2 valley splitting and polarization via flipping of the CrI3 magnetization. The WSe2 phot…
The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods which are cumbersome when fabricating multilayered stacks. Moreover, they tend to suffer from poor control over the lattice orientations and the presence of unwanted adsorbates between the stacked layers. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliat…
Using first-principles calculations, we study the structural and electronic properties of the bilayer SnS/graphene, bilayer SnS/bilayer graphene (AA-stacked), bilayer SnS/bilayer graphene (AB-stacked) and monolayer SnS/graphene/monolayer SnS van der Waals (vdW) heterostructures. Electronic properties of all components of the vdW heterostructures are well preserved, which reflects the weakness of the vdW interaction. In the cases of bilayer SnS/graphene and bilayer SnS/bilayer graphene (AA-stacked), an Ohmic contact is formed which can be turned first into p-type and then into n-type Schottky c…
We investigated the electronic and optoelectronic properties of vertical van der Waals heterostructure photodetectors using layered p type GaSe and n type InSe, with graphene as the transparent electrodes. Not only the photocurrent peaks from the layered GaSe and InSe themselves were observed, also the interlayer optical transition peak was observed, which is consistent with the first-principles calculation. The built-in electric field between p-n heterojunction and the advantage of the graphene electrodes can effectively separate the photo-induced electron-hole pairs, and thus lead to the res…
Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological insulators, vdW heterostructures can be assembled (with no requirement for lattice matching) to provide otherwise unattainable device structures and functionalities. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in van der Waals heterostructured Fe3GeTe2/graphite/Fe3GeTe2 devices. Unlike conventional giant magnetoresistance (GMR) which …
Two-dimensional (2D) van der Waals heterostructures serve as a promising platform to exploit various physical phenomena in a diverse range of novel spintronic device applications. The efficient spin injection is the prerequisite for these devices. The recent discovery of magnetic 2D materials leads to the possibility of fully 2D van der Waals spintronics devices by implementing spin injection through magnetic proximity effect (MPE). Here, we report the investigation of magnetic proximity effect in 2D CrBr3/graphene van der Waals heterostructures, which is probed by Zeeman spin Hall effect thro…
Formation of moiré superlattices is common in Van der Waals heterostructures as a result of the mismatch between lattice constants and misalignment of crystallographic directions of the constituent two-dimensional crystals. We discuss theoretically electron transport in a Van der Waals tunnelling transistor in which one of the electrodes is made of two crystals forming a moiré superlattice at their interface. By investigating structures containing either the aligned graphene/hexagonal boron nitride heterostructure or twisted bilayer graphene, we show that negative differential resistance is po…
Investigating thermal transport in van der Waals heterostructure is of scientific interest and practical importance for their applications in a broad range. In this work, thermal conductivity of one-dimensional heterostructure consisting of carbon and boron nitride nanotubes is systematically investigated via molecular dynamics simulations. Thermal conductivity is found to have strong dependences on temperature, length and diameter. In addition, the axial strain and intensity of van der Waals interaction are demonstrated to be able to modulate thermal conductivity up to about 43% and 37%, resp…
We investigate excitons in stacked transition metal dichalcogenide (TMDC) layers under perpendicularly applied electric field, herein MoSe$_2$/WSe$_2$ van der Waals heterostructures. Band structures are obtained with density functional theory calculations, along with the electron and hole wave functions in conduction and valence bands, respectively. Although the type-II nature of the heterostructure leads to fully charge separated inter-layer excitons, charge carriers distribution among the layers is shown to be easily tunable by external field. Our results show that moderate values of electri…
Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate complex devices, which would be otherwise very difficult to achieve by conventional bottom-up nanofabrication approaches, and to fabricate fully-encapsulated devices with exquisite electronic properties. …
Ferroelectric van der Waals heterostructures provide a natural platform to design a variety of electrically controllable devices. In this work, we demonstrate that AB bilayer graphene encapsulated in MoTe$_2$ acts as a valley valve that displays a switchable built-in topological gap, leading to ferroelectrically driven topological channels. Using a combination of ab initio calculations and low energy models, we show that the ferroelectric order of MoTe$_2$ allows the control of the gap opening in bilayer graphene and leads to topological channels between different ferroelectric domains. Moreov…
Detecting single charging events in quantum devices is an important step towards realizing practical quantum circuits for quantum information processing. In this work, we demonstrate that van derWaals heterostructure devices with gated nano-constrictions in monolayer WSe2 can be used as charge detectors for nearby quantum dots. These results open the possibility of implementing charge detection schemes based on 2D materials in complex quantum circuits.
The time-dependent spin current mediated spin transfer torque behaviour has been investigated via scattering formalism within density functional theory framework supported by Green's function. Quantum magnetotransport characteristics have been revealed in a model semiconducting MoS$_2$/phosphorene van der Waals heterostructure. The dynamics of spin current channelized heterolayer transport has been studied with rotational variation in magnetization angle. It is observed that the time-dependent spin transport torque remains invariant irrespective of magnetization angle direction. The polarized …
We investigate van der Waals (vdW) heterostructures made of germanene, stanene or silicene with hexagonal Boron Nitride (h-BN). The intriguing topological properties of these buckled honeycomb materials can be maintained and further engineered in the heterostructures, where the competition between the substrate effect and external electric fields can be used to control the tunable topological phase transitions. Using such heterostructures as building blocks, various vdW topological domain walls (DW) are designed, along which there exist valley polarized quantum spin Hall edge states or valley-…
We report the fabrication of perpendicular ferromagnetic electrodes for tunneling devices consist of van der Waals heterostructure. We found MgO/Co/Pt films on Hexagonal BN shows perpendicular magnetic anisotropy (PMA) with the easy axis perpendicular to the substrate. Vacuum annealing enhances the perpendicular anisotropy. The easy axis along the perpendicular direction persists up to room temperature with the Pt layer thickness ranges from 1.5 to 5 nm. We employed the PMA electrodes to construct tunneling devices on graphene and monolayer WSe2, where spin injection characteristics and field …
