Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We have recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm$^{2}$V$^{-1}$s$^{-1}$. In this study, we examine which scattering mechanism limits the mobility of our FETs through theoretical calculations. Our calculations reveal that the dominant carrier scattering is caused by surface charged impurities with the density of $\approx$1$\times10^{12}$ cm$^{-2}$, and suggest a possible increase in mobility over 1000 cm$^{2}$V$^{-1}$s$^{-1}$ by reducing the impurities.
Two novel properties, unique for semiconductors: a negative electron affinity [1-2], and a high p-type surface electrical conductivity [3-4], were discovered in diamond at the end of the last century. Both properties appear when the diamond surface is hydrogenated. A natural question arises: is the influence of the surface hydrogen on diamond limited only to the electrical properties? Here, we report the first observation of a transparency peak at 1328 cm-1 in IR absorption of hydrogen-terminated pure (undoped) nanodiamonds. This new optical property is ascribed to Fano-type destructive interf…
Transistors operating at high frequencies are the basic building blocks of millimeter-wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open way for ultra-fast group IV transistors with similar or even better performance than can be achieved with III-V based semiconductors. However, the progress of high-speed graphene transistors has been hampered due to fabrication issues, influence of adjacent materials, and self-heating effects. Here, we report a graphene field-effect transistor (FET) on a diamond substrate, with a $f_{max}$ up to 54 GHz for a…
Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages, temperatures and frequencies with low energy losses, and have been of increasing importance in power and high-frequency electronics. However, the poor performance of p-channel transistors compared with that of n-channel transistors has constrained the production of energy-efficient complimentary circuits with integrated n- and p-channel transistors. The p-type surface conductivity of hydrogen-terminated diamond offers great potential for solving this problem, but surface transfer doping, which is commonl…
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively investigated for high-power and high-frequency electronic applications. The quality of their charge transport (i.e., mobility), however, has been limited due to charged impurities near the diamond surface. Here, we fabricate diamond field effect transistors by using a monocrystalline hexagonal boron nitride as a gate dielectric. The resulting high mobility o…
The application of imaging techniques based on ensembles of nitrogen-vacancy (NV) sensors in diamond to characterise electrical devices has been proposed, but the compatibility of NV sensing with operational gated devices remains largely unexplored. Here we fabricate graphene field-effect transistors (GFETs) directly on the diamond surface and characterise them via NV microscopy. The current density within the gated graphene is reconstructed from NV magnetometry under both mostly p- and n-type doping, but the exact doping level is found to be affected by the measurements. Additionally, we obse…
Pseudosymmetric bias and correct estimation of Coulomb/confinement energy for unintentional quantum dot in channel of metal-oxide-semiconductor field-effect transistor
In-Substrate Imaging of Diamond hBN FET Current via Widefield Quantum Diamond Microscopy
Indian Institute of Technology Bombay（印度理工学院孟买分校）；Indian Institute of Science（印度科学学院）；Tata Consultancy Services（塔塔咨询服务公司）；National Institute for Materials Science（国立材料研究所）
Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond surfaces to study electronic properties, which is far from the experimentally observed hydrogen coverage. In this work, we have carried out a detailed study using fully atomistic reactive molecular dyn…
Noise is a detrimental issue for nitrogen-vacancy (NV) centers in diamond, causing line broadening and decreasing the coherence time (T2). Following our previous electric and magnetic field noise work, we investigate noise caused by the diamond surface roughness, which is a source for charge density fluctuations and incoherent photon scattering. We find that the varying surface charge density noise source is prevalent throughout the entire NV dynamical decoupling frequency range, while the photon scattering noise is almost negligible. Next, we combine the results from various noise sources to …
