We report temperature dependent measurements of ambient pressure specific heat, magnetic susceptibility, anisotropic resistivity and thermal expansion as well as in-plane resistivity under pressure up to 20.8 kbar on single crystals of EuAg$_4$As$_2$. Based on thermal expansion and in-plane electrical transport measurements at ambient pressure this compound has two, first order, structural transitions in 80 - 120 K temperature range. Ambient pressure specific heat, magnetization and thermal expansion measurements show a cascade of up to seven transitions between 8 and 16 K associated with the ordering of the Eu$^{2+}$ moments. In-plane electrical transport is able to detect more prominent of these transitions: at 15.5, 9.9, and 8.7 K as well as a weak feature at 11.8 K at ambient pressure. Pressure dependent electrical transport data show that the magnetic transitions shift to higher temperatures under pressure, as does the upper structural transition, whereas the lower structural transition is suppressed and ultimately vanishes. A jump in resistivity, associated with the upper structural transition, decreases under pressure with an extrapolated disappearance (or a change of sign) by 30-35 kbar. In the 10 - 15 kbar range a kink in the pressure dependence of the upper structural transition temperature as well as the high and low temperature in-plane resistivities suggest that a change in the electronic structure may occur in this pressure range. The results are compared with the literature data for SrAg$_4$As$_2$.
A new ferromagnetic semiconductor system of Eu$_{1-x}$Sr$_x$AgP $(x = 0.0-0.6)$ compounds: Crystallographic, magnetic, and magneto-resistive properties
Magnetic field and pressure tuning of the heavy fermion antiferromagnet CePdIn
University of Augsburg（奥格斯堡大学）；New Cornerstone Science Laboratory, Center for Correlated Matter and School of Physics, Zhejiang University（浙江大学 correlated matter 中心与新基石科学实验室物理学院）；Max Planck Institute for Chemistry（马克斯·普朗克化学研究所）；Department of Physics, University of Tokyo（东京大学物理学系）；Department of Quantum Matter, Graduate School of Advanced Science and Engineering, Hiroshima University（广岛大学先进理工学研究科量子物质学系）；Department of Low Temperature Experiment, Integral Experimental Support/Research Division, N-BARD, Hiroshima University（广岛大学 N-BARD 综合实验支持/研究部低温实验系）
High-Pressure Tuning of Electrical Transport in Freestanding Oxide Films
Anhui Provincial Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences（中国科学院合肥物质科学研究院、安徽省低能量子材料与器件重点实验室）；Science Island Branch of Graduate School, University of Science and Technology of China（中国科学技术大学研究生院科学岛分部）；School of Microelectronics and Control Engineering, Changzhou University（常州大学微电子与控制工程学院）；Spin-X Institute, School of Chemistry and Chemical Engineering, South China University of Technology（华南理工大学化学与化工学院自旋X研究所）
Pressure-tuning of electronic structure of CeTe3 probed by femtosecond collective mode spectroscopy
Institute of Physics, Johannes Gutenberg-University（约翰内斯·古腾堡大学物理研究所）；Institute for Quantum Materials and Technologies, Karlsruhe Institute of Technology（卡尔斯鲁厄理工学院量子材料与技术研究所）；Department of Physics, University of Konstanz（康斯坦茨大学物理系）；Department of Applied Physics, Stanford University（斯坦福大学应用物理系）；Department of Physics, Universidad de Los Andes（安第斯大学物理系）；Geballe Laboratory for Advanced Materials, Stanford University（斯坦福大学加巴勒先进材料实验室）；Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory（斯坦福材料能源科学研究所，SLAC国家加速器实验室）
Pressure tuning of superconductivity independent of disorder in Tl$_{2}$Ba$_{2}$CaCu$_{2}$O$_{8+δ}$
在大范围内改变铜氧化物超导体的超导转变温度是确定超导机制的必要步骤。化学掺杂或元素取代已被证明是有效的，但也带来晶格无序。即使在固定的掺杂水平下，这种无序也可以完全破坏超导性。压力被认为是调整超导性的最干净的方法。然而，从最近的实验中认识到压力引起的无序增加。通过选择一个无序的Tl $_{2}$ Ba $_{2}$ CaCu $_{2}$ O $_{8+δ}$在最佳掺杂，我们进行单晶X射线衍射和磁化率测量在高压下。所获得的结构数据提供了证据的强大功能，这种材料的无序在研究的压力范围内。这一特征确保了压力对超导性的影响与无序区分开来。导出的抛物线状行为的转变温度与压力高达近30 GPa，具有最大值约7 GPa，提供了一个平台，用于测试任何现实的理论模型在一个几乎恒定的无序环境。当考虑载流子浓度和配对相互作用强度作为两个压力本征变量时，可以理解这种行为。
Pressure tuning domain-wall chirality in noncentrosymmetric magnetic Weyl semimetal CeAlGe
拓扑磁性Weyl半金属是一类具有可控手性畴壁的半导体材料，具有广阔的应用前景。为了在应用程序中利用它们，重要的是要有一个适当的方法来调整和操纵这些域墙。一种可能的方式是通过磁致弹性耦合。最近提出的$R$ Al $X$（$R$ =稀土，$X$ =Si和Ge）族磁性Weyl半金属中稀土的参与可以提供这样的平台。在这里，我们提出的运输和流体静压下的CeAlGe的热力学性质。我们发现，压力增强CeAlGe的反铁磁交换，但基本上保留其磁性结构。在磁有序态中观察到具有明显环形状的大拓扑霍尔效应，并且在压力下它分裂成两个区域。这种不寻常的电磁响应被推断为手性磁畴壁的结果。压力下的反铁磁序的重新进入和前所未有的伴随其演变强烈建议通过磁弹性耦合在非中心对称磁性Weyl半金属开关这种电磁响应的能力。
Hydrostatic and uniaxial pressure tuning of iron-based superconductors: Insights into superconductivity, magnetism, nematicity and collapsed tetragonal transitions
铁基超导体以其有趣的相图而闻名，该相图显示了电子，磁性和结构自由度的复杂相互作用。在观察到的相变中有超导、磁性和几种类型的结构转变，包括四边形到正交晶系和四边形-四边形转变。特别地，广泛观察到的四方晶到斜方晶的转变被认为是与晶格耦合的电子有序的结果，因此被称为四方晶转变。因此，向列性是这些材料的一个突出特征，这表明了电子和晶格性质耦合的重要性。相应地，这些系统特别容易通过压力（流体静力学、单轴或某种组合）进行调谐。我们审查的努力，以探测压力调谐铁基超导体的相图，强烈关注我们自己最近的见解，这类材料的几个成员在静水压力下的相图。这些研究FeSe，Ba（Fe $_{1-x}$ Co $_x$）$_2$ As $_2$，Ca（Fe $_{1-x}$ Co $_x$）$_2$ As $_2$和CaK（Fe $_{1-x}$ Ni $_x$）$_4$ As $_4$，在很大程度上，由于在不同压力环境下使用的测量方法的进步而成为可能。我们指出了这些工具的潜在影响更广泛的类强关联电子系统的研究。
Research progress in high-pressure tuning of layered magnetic materials
Yanshan University（燕山大学）；Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University（燕山大学高压科学中心亚稳态材料科学与技术国家重点实验室）；Hebei Key Laboratory of Microstructure Materials Physics, School of Science, Yanshan University（燕山大学理学院河北省微观结构材料物理重点实验室）
Comparing charge transfer tuning effects by chemical substitution and uniaxial pressure in the organic charge transfer complex tetramethoxypyrene-tetracyanoquinodimethane
Adaptive fine-tuning of foundation models for crystal structure prediction: Discovery of high-pressure phases in the CaFeNi system
Joint Institute for Nuclear Research（苏联联合核研究所）；Vereshchagin Institute of High Pressure Physics, Russian Academy of Sciences（俄罗斯科学院韦列夏金高压物理研究所）；Vatolin Institute of Metallurgy of the Ural Branch of the Russian Academy of Sciences（俄罗斯科学院乌拉尔分支瓦托林冶金研究所）；Ural Federal University（乌拉尔联邦大学）
