用于纳米或微电子器件中multi-kGy辐照的多功能紧凑型高强度电子束
A versatile and compact high-intensity electron beam for multi-kGy irradiation in nano or micro-electronic devices
摘要：
介绍了一种用于材料老化的紧凑型低能高强度电子源。激光诱导等离子体在30 kV二极管内移动，并在阳极位置产生5 MW电子束。可以沉积到硅或镓样品中的相应剂量估计为每次激光照射25 kGy。剂量分布强烈依赖于阴极电压，并且可以在100 nm至1 $μ$ m范围内进行调节。有了这个多功能的源，一个路径打开，研究高辐射下的微或纳米电子元件，没有标准的辐射防护问题。
英文摘要：
A compact low-energy and high-intensity electron source for material aging applications is presented. A laser-induced plasma moves inside a 30 kV diode and produces a 5 MW electron beam at the anode location. The corresponding dose that can be deposited into silicon or gallium samples is estimated to be 25 kGy per laser shot. The dose profile strongly depends on the cathode voltage and can be adjusted from 100 nm to 1 $μ$m. With this versatile source, a path is opened to study micro or nano-electronic components under high irradiation, without the standard radioprotection issues.
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