To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved at temperatures below 500°C, by exploring the effects of chemisorption time, substrate temperature and plasma exposure time on material properties. Reduction in chemisorption time mitigates premature precursor decomposition at T_S > 375°C , and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450°C, compatible with CMOS processes, with 0.5s chemisorption time and 25s plasma exposure exhibited a high plasmonic figure of merit (|ε^'/ε^''|) of 2.8 and resistivity of 31 μΩ-cm. These TiN thin films fabricated with subwavelength apertures were shown to exhibit extraordinary transmission.
In this paper, a thermal DC plasma torch was designed and developed for plasma spraying of a titanium nitride layer. Thermal plasma spray torch is a kind of non-transferred torch which can produce a high energy and high temperature plasma arc jet. Ti powders were injected into the plasma jet interacted with nitrogen plasma, resulted in a thick and hard layer of titanium nitride. Coating sample produced by this method was analysed with Raman spectroscopy confirming titanium nitride production. To study the thickness of the layer optical microscopy was used. It was found that the resulted layer …
Developing colloidal plasmonic nanomaterials with high carrier density that show optical resonances and photochemical activity extending from the visible to the mid-infrared (MIR) ranges remains a challenging pursuit. Here, we report the fabrication of titanium nitride (TiN) nanobars obtained using a two step procedure based on a wet chemical route synthesis of TiO2 nanowires and their subsequent high temperature annealing in ammonia flow. Electromagnetic simulations of the resulting TiN nanobars reveal a rich set of optical resonances featuring transverse, longitudinal and mixed transverse lo…
Here, we propose titanium nitride (TiN) as an alternative plasmonic material for an on-chip silicon plasmonic Schottky photodetector that is based on an internal photoemission process and operating at telecom wavelengths. The examined structure employs an asymmetric metal-semiconductor-metal waveguide structure with one of the electrodes being gold and the second either gold, titanium or titanium nitride. Apart from the excellent optical properties desired for this type of photodetector such as high absorption losses and reasonably high real part of the permittivity, titanium nitride is a CMOS…
We demonstrate a selectively emitting optical Fabry-Pérot resonator based on a few-nm-thin continuous metallic titanium nitride film, separated by a dielectric spacer from an optically thick titanium nitride back-reflector, which exhibits excellent stability at 1070 K against chemical degradation, thin-film instabilities and melting point depression. The structure paves the way to the design and fabrication of refractory thermal emitters using the well-established processes known from the field of multilayer and rugate optical filters. We demonstrate that a few-nanometer thick films of titaniu…
Transition metal nitrides have received significant interest for use within plasmonic and optoelectronic devices. However, deposition temperature remains a significant barrier to the integration of transition metal nitrides as plasmonic materials within CMOS fabrication processes. Binary, ternary and layered transition metal nitride thin films based on titanium and niobium nitride are deposited using High Power Impulse Magnetron Sputtering (HIPIMS). The increased plasma densities achieved in the HIPIMS process allow high quality plasmonic thin films to be deposited at CMOS compatible temperatu…
Graphene has emerged as an ultrafast optoelectronic material for on-chip photodetector applications. The 2D nature of graphene enables its facile integration with complementary metal-oxide semiconductor (CMOS) microelectronics and silicon photonics, yet graphene absorbs only $\sim$2.3% of light. Plasmonic metals can enhance the responsivity of graphene photodetectors, but may result in CMOS-incompatible devices, depending on the choice of metal. Here, we propose a plasmon-enhanced photothermoelectric graphene detector using CMOS-compatible titanium nitride (TiN) on the silicon-on-insulator (SO…
Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide (CPW) resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric region's contribution to resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal-air interface dominates the loss in the Al device…
Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9-110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/square. For films thicker than 14 nm, quality factors measured in the quantum regime range from 0.4 to 1.0 million and are likely limited by dielectric two-level systems. Additionally, we show characteristic impedances up to 28 kOhm, with no significan…
Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities. Recent results have demonstrated that the optical properties of titanium nitride, a refractory and CMOS-compatible plasmonic material, can be tuned by adding silicon and oxygen dopants. However, to fully leverage the potential of titanium (silicon oxy)nitride, a reliable and scalable fabrication process with few-nm precision is needed. In this work, we deve…
Photothermal therapy (PTT) has shown significant potential in cancer treatment. However, developing nanomaterial-based photothermal agents with good biocompatibility and high photothermal conversion efficiency (PTCE) remains a key challenge. Titanium has been widely employed as biomedical materials based on their excellent biocompatibility. In this work, the titanium based plasmonic photothermal therapy (Ti-PPTT) is demonstrated. Using the liquid-phase exfoliation (LPE), the metallic Ti can be fabricated into the two-dimensional (2D) nanosheets (NSs), similar to exfoliating other layered 2D ma…
Photonic crystals can integrate plasmonic materials such as indium tin oxide (ITO) in their structure. Exploiting ITO plasmonic properties it is possible to tune the photonic band gap of the photonic crystal upon the application of an external stimuli. In this work, we have fabricated a one-dimensional multilayer photonic crystal via radiofrequency sputtering and we have triggered its optical response with ultrafast pump-probe spectroscopy. Upon photoexcitation we observe a change in the refractive index of indium tin oxide. Such effect has been used to create a photonic crystal that change it…
Group 4 transition metal nitride (TMN) nanoparticles (NPs) display strong plasmonic responses in the visible and near-infrared regimes, exhibit high melting points and significant chemical stability and thus are potential earth-abundant alternatives to Au and Ag based plasmonic applications. However, a detailed understanding of the relationship between TMN NP properties and plasmonic response is required to maximize their utility. In this study, the localized surface plasmon resonance (LSPR) frequency, bandwidth, and extinction of titanium nitride (TiN), zirconium nitride (ZrN), and hafnium ni…
The unique properties of the emerging photonic materials - conducting nitrides and oxides - especially their tailorability, large damage thresholds, and the so-called epsilon-near-zero (ENZ) behavior, have enabled novel photonic phenomena spanning optical circuitry, tunable metasurfaces, and nonlinear optical devices. This work explores direct control of the optical properties of polycrystalline titanium nitride (TiN) and aluminum-doped zinc oxide (AZO) by tailoring the film thickness, and their potential for ENZ-enhanced photonic applications. We demonstrate that TiN-AZO bilayers act as Ferre…
Synaptic devices with linear high-speed switching can accelerate learning in artificial neural networks (ANNs) embodied in hardware. Conventional resistive memories however suffer from high write noise and asymmetric conductance tuning, preventing parallel programming of ANN arrays as needed to surpass conventional computing efficiency. Electrochemical random-access memories (ECRAMs), where resistive switching occurs by ion insertion into a redox-active channel address these challenges due to their linear switching and low noise. ECRAMs using two-dimensional (2D) materials and metal oxides suf…
The metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a subnanometer accuracy that enables reusability without affecting the enhancement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer owing to its multifold advantages over the traditional dielectric thin films. With rhodamine 6G as a repre…
Transition metal nitrides have recently gained attention in the fields of plasmonics, plasmon-enhanced photocatalysis, photothermal applications, and nonlinear optics because of their suitable optical properties, refractory nature, and large laser damage thresholds. This work reports comparative studies of the transient response of films of titanium nitride, zirconium nitride, and Au under femtosecond excitation. Broadband transient optical characterization helps to adjudicate earlier, somewhat inconsistent reports regarding hot electron lifetimes based upon single wavelength measurements. The…
