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arXiv 1911.00530cond-mat.mes-hall
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无序二维材料的原子$T$-矩阵理论:束缚态、光谱特性、准粒子散射和输运

Atomistic $T$-matrix theory of disordered 2D materials: Bound states, spectral properties, quasiparticle scattering, and transport

Kristen Kaasbjerg

摘要:

在这项工作中,我们提出了一个原子的第一性原理框架,用于模拟具有随机分布的点缺陷(杂质)的无序二维(2D)材料的低温电子和输运性质。该方法是基于结合现实的密度泛函理论(DFT)描述的缺陷和它们的散射矩阵元素的$T$矩阵形式主义。从$T$矩阵近似到无序平均格林函数(GF)和玻尔兹曼输运方程中的碰撞积分,该方法允许计算,例如,态密度(DOS)包括来自束缚缺陷态的贡献、准粒子谱和谱线宽度(散射率)以及无序2D材料的电导率/迁移率。我们通过检查这些量的原型2D材料石墨烯和过渡金属二硫属化物(TMD)的空位缺陷和替代杂质原子污染的单层的方法。通过比较玻恩和$T$矩阵近似,我们还证明了玻恩近似对2D材料中缺陷的强烈破坏,表现在明显的重整化,例如,散射率的高阶$T$矩阵方法。由于$T$矩阵近似对于稀无序基本上是精确的,即,低缺陷浓度($c_\text{dis} \ll 1$)或密度($n_\text{dis}\ll A_\text{cell}^{-1}$,其中$A_\text{cell}$是晶胞面积),我们的第一原理方法提供了一个极好的框架,用于模拟具有与器件相关的缺陷浓度的无序2D材料的性质。

英文摘要:

In this work, we present an atomistic first-principles framework for modeling the low-temperature electronic and transport properties of disordered two-dimensional (2D) materials with randomly distributed point defects (impurities). The method is based on the $T$-matrix formalism in combination with realistic density-functional theory (DFT) descriptions of the defects and their scattering matrix elements. From the $T$-matrix approximations to the disorder-averaged Green's function (GF) and the collision integral in the Boltzmann transport equation, the method allows calculations of, e.g., the density of states (DOS) including contributions from bound defect states, the quasiparticle spectrum and the spectral linewidth (scattering rate), and the conductivity/mobility of disordered 2D materials. We demonstrate the method by examining these quantities in monolayers of the archetypal 2D materials graphene and transition metal dichalcogenides (TMDs) contaminated with vacancy defects and substitutional impurity atoms. By comparing the Born and $T$-matrix approximations, we also demonstrate a strong breakdown of the Born approximation for defects in 2D materials manifested in a pronounced renormalization of, e.g., the scattering rate by the higher-order $T$-matrix method. As the $T$-matrix approximation is essentially exact for dilute disorder, i.e., low defect concentrations ($c_\text{dis} \ll 1$) or density ($n_\text{dis}\ll A_\text{cell}^{-1}$ where $A_\text{cell}$ is the unit cell area), our first-principles method provides an excellent framework for modeling the properties of disordered 2D materials with defect concentrations relevant for devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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