Triplet excitation and electroluminescence from a supramolecular monolayer embedded in a boron nitride tunnel barrier

Circularly polarized electroluminescence from silicon nanostructures heavily doped with boron

The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by δ-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a function of temperature and excitation levels. The CPEL dependences on the forward current and temperature show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW δ-barriers interface.

Polarized electroluminescence from silicon nanostructures

We present the first findings of the circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by δ-barriers heavily doped with boron. The CPEL dependences on the forward current and lateral electric field show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW - δ-barriers interface with the assistance of phosphorus donors.

The Effect of Dipole Boron Centers on the Electroluminescence of Nanoscale Silicon p+-n Junctions

Nanoscale silicon p(+)-n junctions with very high concentration of boron, 5 10^21 cm-3, are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree of the linear polarization along preferred crystallographic axis which can be controlled by the lateral voltage applied in the plane of the p(+)-n junction. Such behavior together with the temperature dependence of the EL intensity is attributed to the presence of the self-compensating dipole boron centers, B(+)-B(-), with negative correlation energy which …

Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors

Light emission from higher-order correlated excitonic states has been recently reported in hBN-encapsulated monolayer WSe2 and WS2 upon optical excitation. These exciton complexes are found to be bound states of excitons residing in opposite valleys in momentum space, a promising feature that could be employed in valleytronics or other novel optoelectronic devices. However, electrically-driven light emission from such exciton species is still lacking. Here we report electroluminescence from bright and dark excitons, negatively charged trions and neutral and negatively charged biexcitons, gener…

石墨烯-hBN范德华异质结中的双曲声子极化激元电致发光

Hyperbolic phonon-polariton electroluminescence in graphene-hBN van der Waals heterostructures

本研究在hBN/石墨烯异质结中实现了双曲声子极化激元的全电激发，揭示其源于带间跃迁和带内切伦科夫辐射，为电泵浦可调谐中红外/太赫兹声子极化激元激光器及电子器件高效散热提供新途径。

范德华半导体中孤立色心的室温电致发光

Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors

该研究首次实现六方氮化硼中孤立色心的室温电致发光，通过构建石墨烯-六方氮化硼-石墨烯隧道结器件，获得宽光谱范围的稳定窄带发射，为集成量子技术和片上光子电路提供了新的材料基础。