范德华半导体中孤立色心的室温电致发光
Room temperature electroluminescence from isolated colour centres in van der Waals semiconductors
AI总结：
该研究首次实现六方氮化硼中孤立色心的室温电致发光，通过构建石墨烯-六方氮化硼-石墨烯隧道结器件，获得宽光谱范围的稳定窄带发射，为集成量子技术和片上光子电路提供了新的材料基础。
摘要：
宽禁带半导体中的缺陷近来已成为固态量子光学技术的极具潜力的候选材料。发射体的电激发有望为可扩展片上器件铺平道路，因此备受追捧。然而，大多数宽禁带材料难以实现高效掺杂，这进而给高效电激发和片上集成带来了挑战。本文中，我们首次展示了六方氮化硼（hexagonal boron nitride, hBN）中孤立色心的室温电致发光。我们利用二维材料的范德华（van der Waals, vdW）结构，设计了由石墨烯-hBN-石墨烯隧道结构成的纳米级器件。在施加偏压下，载流子被注入hBN中，并引发hBN色心的局域光发射。值得注意的是，我们的器件可在室温下工作，产生覆盖从可见光到近红外宽光谱范围的稳定窄带发射。我们的工作标志着范德华材料研究的一个重要里程碑，彰显了其在集成量子技术和片上光子电路方面的广阔应用前景。
英文摘要：
Defects in wide bandgap semiconductors have recently emerged as promising candidates for solid-state quantum optical technologies. Electrical excitation of emitters may pave the way to scalable on-chip devices, and therefore is highly sought after. However, most wide band gap materials are not amenable to efficient doping, which in turn poses challenges on efficient electrical excitation and on-chip integration. Here, we demonstrate for the first time room temperature electroluminescence from isolated colour centres in hexagonal boron nitride (hBN). We harness the van der Waals (vdW) structure of two-dimensional materials, and engineer nanoscale devices comprised of graphene - hBN - graphene tunnel junctions. Under an applied bias, charge carriers are injected into hBN, and result in a localised light emission from the hBN colour centres. Remarkably, our devices operate at room temperature and produce robust, narrowband emission spanning a wide spectral range - from the visible to the near infrared. Our work marks an important milestone in van der Waals materials and their promising attributes for integrated quantum technologies and on-chip photonic circuits.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
