arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1908.04994physics.app-phcond-mat.mtrl-sci
收藏

在太阳能电池数值模拟中解决带边特性空间变化和局域态载流子捕获和复合

Addressing band-edge-property spatial variations and localized-state carrier trapping and recombination in solar cell numerical modeling

Yiming Liu, Stephen Fonash

摘要:

传导和价带边缘性质随位置的变化以及引起能隙中的局域态的缺陷在确定太阳能电池性能中可起重要作用。了解它们对设备的影响对于解释复杂的实验观察和优化太阳能电池的性能是必要的。在这篇综述中,我们包括电子和空穴的带边特性的变化所产生的有效力与位置的太阳能电池性能的数值公式。此外,我们系统地分类和审查各种不同类型和分布的局域态,并包括在我们的数值输运模型的载流子捕获,电场修改,和这些局域态引起的复合。的成功实施的带边特性的变化和缺陷状态的影响的数值模拟的方法证明使用的太阳能电池模拟代码分析的微电子和光子结构(AMPS)及其衍生物。

英文摘要:

Conduction and valence band-edge-property variations with position as well as defects giving rise to localized states in the energy gap can play a significant role in determining solar cell performance. Understanding their effects on a device is necessary in interpreting complex experimental observations and in optimizing the performance of solar cells. In this overview, we include the effective forces arising from electron and hole band-edge-property variations with position in a numerical formulation of solar cell performance. Further we systematically catalogue and review a variety of localized states with different types and distributions, and include in our numerical transport model the carrier trapping, electric field modification, and recombination caused by these localized states. The successful implementation of the numerical modeling of band-edge-property variations and defect state effects is demonstrated using the methodology of the solar cell simulation code Analysis of Microelectronic and Photonic Structures (AMPS) and its derivatives.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑