arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1906.06012cond-mat.mtrl-sci
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在高达约37 GPa的压力下TaAs2中的鲁棒磁电阻

Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa

Hongyuan Wang, Cuiying Pei, Hao Su, Zhenhai Yu, Mingtao Li, Wei Xia, Xiaolei Liu, Qifeng Liang, Jinggeng Zhao, Chunyin Zhou, Na Yu, Xia Wang, Zhiqiang Zou, Lin … 展开作者

Hongyuan Wang, Cuiying Pei, Hao Su, Zhenhai Yu, Mingtao Li, Wei Xia, Xiaolei Liu, Qifeng Liang, Jinggeng Zhao, Chunyin Zhou, Na Yu, Xia Wang, Zhiqiang Zou, Lin Wang, Yanpeng Qi, Yanfeng Guo

摘要:

半导体材料中极大的磁电阻效应(XMR)由于其独特的物理性质和潜在的应用前景而引起人们的广泛关注。我们报告的结果同步辐射X射线衍射(SXRD)和电输运测量TaAs 2的压力下高达~ 37 GPa,这揭示了各向异性压缩的晶胞,形成不寻常的As-As键以上9.5 GPa,和金属性的增强。有趣的是,TaAs 2在压力下的MR变化平缓,在1.7 GPa下为96.6%,在36.6 GPa下仍为36.7%。在压力下几乎鲁棒的MR可能与从头计算揭示的近稳定的电子结构有关。这一发现将扩大XMR的潜在用途,即使在高压下。

英文摘要:

The extremely large magnetoresistance (XMR) in nonmagnetic semimetals has inspired growing interest owing to both intriguing physics and potential applications. We report results of synchrotron X-ray diffraction (SXRD) and electrical transport measurements on TaAs2 under pressure up to ~ 37 GPa, which revealed an anisotropic compression of the unit cell, formation of unusual As-As bonds above 9.5 GPa, and enhancement of metallicity. Interestingly, the MR of TaAs2 under pressure changed gently, which at 1.7 GPa is 96.6% and at 36.6 GPa is still 36.7%. The almost robust MR under pressure could be related to the nearly stable electronic structure unveiled by the ab initio calculations. The discovery would expand the potential use of XMR even under high pressure.

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