利用能带工程分离BaSnO3中的电子和施主
Separating Electrons and Donors in BaSnO3 via Band Engineering
摘要：
通过结合薄膜生长，硬X射线光电子能谱学（HAXPES），扫描透射电子显微镜/电子能量损失谱（STEM/EELS），磁输运测量，和运输建模，我们报告的调制掺杂BaSnO 3（BSO）使用较宽的带隙La掺杂SrSnO 3（LSSO）层的示范。硬X射线光电子能谱学（HAXPES）揭示了LSO和BSO之间0.71 +/- 0.02 eV的价带偏移，导致使用LSO远程掺杂BSO的有利导带偏移。LSSO/BSO异质结的非线性霍尔效应证实了电子从LSSO到BSO的转移导致的双通道导电，并与一维Poisson方程和薛定谔方程的自洽解结果保持良好的一致性.角相关的HAXPES测量揭示了电子在BSO中的2-3个晶胞上的空间分布。这些结果通过在非SrTiO 3基氧化物异质结构中建立调制掺杂方法，使钙钛矿氧化物更接近室温氧化物电子学。
英文摘要：
Through a combination of thin film growth, hard X-ray photoelectron spectroscopy (HAXPES), scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS), magneto-transport measurements, and transport modeling, we report on the demonstration of modulation-doping of BaSnO3 (BSO) using a wider bandgap La-doped SrSnO3 (LSSO) layer. Hard X-ray photoelectron spectroscopy (HAXPES) revealed a valence band offset of 0.71 +/- 0.02 eV between LSSO and BSO resulting in a favorable conduction band offset for remote doping of BSO using LSSO. Nonlinear Hall effect of LSSO/BSO heterostructure confirmed two-channel conduction owing to electron transfer from LSSO to BSO and remained in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Angle-dependent HAXPES measurements revealed a spatial distribution of electrons over 2-3 unit cells in BSO. These results bring perovskite oxides a step closer to room-temperature oxide electronics by establishing modulation-doping approaches in non-SrTiO3-based oxide heterostructure.
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