We reported the first spin potentiometric measurement to electrically detect spin polarization arising from spin-momentum locking in topological insulator (TI) surface states using ferromagnet/tunnel barrier contacts [1]. This method has been adopted to measure the current generated spin in other TI systems [2-10], albeit with conflicting signs of the measured spin voltage [1,2,4,6-10]. Tian et al. wish to use their model as presented in Ref. [4] to determine the sign of the induced spin polarization, and thereby determine whether the claims of various groups to have sampled the topologically protected surface states in bulk TIs are correct. The central point of our Reply is that the model as presented is incapable of doing so because it fails to include separate physical contributions which independently effect the sign of the spin polarization measured.
Reply to the Comment by Tikhonov and Khrapai on "Long-range crossed Andreev reflection in a topological insulator nanowire proximitized by a superconductor"
3D carbon allotropes: Topological quantum materials with obstructed atomic insulating phases, multiple bulk-boundary correspondences, and real topology
Topological insulator ribbon: Surface states and dynamical response
从理论上研究了具有实际矩形截面的拓扑绝缘体带的电荷和自旋极化分布。由于在两个横向方向上的收缩，表面态离散成一系列的子带内的体带隙。电荷和自旋分布显示出不同于理想拓扑表面态的有趣特征。分析了四种不同的表面态合并成一个新的表面态的效果。研究了该带的光学电导率和动态自旋极化率。与单一理想表面不同，带的光学响应和动态自旋极化率之间并没有明确的对应关系。动力学自旋极化率可以用来确定Bi $_2$ Se $_3$更合适的模型。
