Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-factor is enhanced to around 6.8, more than three times the value in bulk ZnO. We show that the effective mass m^{*} increases as the electron density decreases, resulting from the strong electron-electron interactions. In this strongly interacting 1D system we study features matching the 0.7 conductance anomalies up to the fifth subband. This paper demonstrates that high-mobility oxide heterostructures such as this can provide good alternatives to conventional III-V semiconductors in spintronics and quantum computing as they do not have their unavoidable dephasing from nuclear spins. This paves a way for the development of qubits benefiting from the low defects of an undoped heterostructure together with the long spin lifetimes achievable in silicon.
Surface acoustic waves (SAWs) have been used to transport single electrons across long distances of several hundreds of microns. They can potentially be instrumental in the implementation of scalable quantum processors and quantum repeaters, by facilitating interaction between distant qubits. While most of the work thus far has focused on SAW devices in doped GaAs/AlGaAs heterostructures, we have developed a method of creating lateral p-n junctions in an undoped heterostructure containing a quantum well, with the expected advantages of having reduced charge noise and increased spin-coherence l…
We investigate spin pumping and the effective spin mixing conductance in heterostructures based on magnetic oxide trilayers composed of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO), LaNiO$_3$ (LNO), and SrRuO$_3$ (SRO). The heterostructures serve as a model system for an estimation of the effective spin mixing conductance at the different interfaces. Our results show that by introducing a LNO interlayer between LSMO and SRO, the total effective spin mixing conductance increases due to the much more favourable interface of LSMO/LNO with respect to the LSMO/SRO interface. Neverheless, the spin current int…
The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in in-situ prepared ferromagnetic EuO/W thin film bilayers with magnetically and chemically well-defined interfaces. We characterize the magnetoresistance effects utilizing angle-dependent and field-dependent magnetotransport measurements as a function of temperature. Applying the established SMR model, we derive and quantify the real and imaginary parts of the compl…
Half-quantized anomalous Hall conductance in topological insulator/ferromagnet van der Waals heterostructures
Linnaeus University（林奈大学）；Nordita, KTH Royal Institute of Technology and Stockholm University（北欧原子理论中心，皇家理工学院和斯德哥尔摩大学）；University of Connecticut（康涅狄格大学）；University of Texas at El Paso（德克萨斯大学埃尔帕索分校）；University of Texas at Austin（德克萨斯大学奥斯汀分校）
We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined optothermal Raman techniques, and reveal very high interfacial thermal conductance between hBN and MoS2. By studying the Raman shift of hBN and MoS2 in suspended and substrate-supported thin films under varying laser power and temperature, we calibrate lateral (in-plane) thermal conductivity of hBN and MoS2 and the vertical interfacial thermal conductance in the hBN/MoS2/hBN heterostructure as well as the interfaces b…
Increased power density in modern microelectronics has led to thermal management challenges which can cause degradation in performance and reliability. In many high-power electronic devices, the power consumption and heat removal are limited by the thermal boundary conductance (TBC) at the interfaces of dissimilar materials. Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (h-BN) have attracted interest as a conductor/insulator pair in next-generation devices because of their unique physical properties; however, the thermal transport at the interfaces must be underst…
Indian Institute of Technology Delhi（印度德里理工学院）；Inter-University Accelerator Center（大学间加速器中心）；University of Gothenburg（哥德堡大学）；Research Institute of Electrical Communication, Tohoku University（东北大学电气通信研究所）
We measure electronic transport through point contacts in the high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around $T \sim 10 K$ for all investigated electron densities and point contact widths. For high electron densities this conductance exceeds the fundamental ballistic limit (Sharvin limit). These observations are in agreement with a viscous electron transport model and previous experiments in graphene.
We numerically investigate the magnon-mediated spin transport and scaling behaviors of a nonmagnetic metal/nonmagnetic metal/ferromagnetic insulator (NM/NM/FI) heterostructure in the presence of Anderson disorders. For the two-dimensional (2D) NM/NM/FI system, an enhancement of spin conductance in the weak disorder regime is found due to the increasing of the interfacial density of states (DOS) at NM/FI interface. As a result, a new scaling regime is uncovered in the metallic regime where the spin conductance fluctuation rms(G) scales linearly with the average spin conductance <G>, independent…
Motivated by the recent findings of unconventional superconductivity in $\mathrm{CoSi_2 / TiSi_2}$ heterostructures, we study the effect of interface induced Rashba spin orbit coupling on the conductance of a three terminal "T" shape superconducting device. We calculate the differential conductance for this device within the quasi-classical formalism that includes the mixing of triplet-singlet pairing due to the Rashba spin orbit coupling. We discuss our result in the light of the conductance spectra reported by Chiu {\it et al.} for $\mathrm{CoSi_2 / TiSi_2}$ heterostructures.
In this study, the electrostatically induced quantum confinement structure, quantum point contact, has been realized in p-type trilayer tungsten diselenide-based van der Waals heterostructure with modified van der Waals contact method with degenerately doped transition metal dichalcogenide crystals. Clear quantized conductance and pinch-off state through the one-dimensional confinement were observed by dual-gating of split gate electrodes and top gate. Conductance plateaus were observed at step of 0.5 $\times$ 2e$^{2}$/h at zero and high magnetic field in addition to quarter plateaus at a fini…
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the…
The long-sought Majorana fermion is expected to manifest in a topological-superconductor heterostructure as a zero bias conductance peak (ZBCP). As one promising platform for such heterostructures, we investigate the cleaved surface of the topological semimetal Sb(111) using scanning tunneling microscopy and spectroscopy. Remarkably, we find a robust ZBCP on some terraces of the cleaved surface, although no superconductor is present. Using quasiparticle interference imaging, Landau level spectroscopy and density functional theory, we show that the ZBCP originates from a van Hove singularity pu…
We investigate phonon spin transport in an insulating ferromagnet-nonmagnet-ferromagnet heterostructure. We show that the magnetoelastic interaction between the spins and the phonons leads to nonlocal spin transfer between the magnets. This transfer is mediated by a local phonon spin current and accompanied by a phonon spin accumulation. The spin conductance depends nontrivially on the system size, and decays over millimeter length scales for realistic material parameters, far exceeding the decay lengths of magnonic spin currents.
The effect of split gate size on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure
Unconventional superconductivity and in particular triplet superconductivity have been front and center of topological materials and quantum technology research. Here we report our observation of triplet superconductivity in nonmagnetic CoSi$_2$/TiSi$_2$ heterostructures on silicon. CoSi$_2$ undergoes a sharp superconducting transition at a critical temperature $T_c \approx$ 1.5 K, while TiSi$_2$ is a normal metal. We investigate conductance spectra of both two-terminal CoSi$_2$/TiSi$_2$ tunnel junctions and three-terminal T-shaped CoSi$_2$/TiSi$_2$ superconducting proximity structures. We rep…
The $ν= 2/3$ fractional quantum Hall state is the hole-conjugate state to the primary Laughlin $ν= 1/3$ state. We investigate transmission of edge states through quantum point contacts fabricated on a GaAs/AlGaAs heterostructure designed to have a sharp confining potential. When a small but finite bias is applied, we observe an intermediate conductance plateau with $G = 0.5 \frac{e^2}{h}$. This plateau is observed in multiple QPCs, and persists over a significant range of magnetic field, gate voltage, and source-drain bias, making it a robust feature. Using a simple model which considers scatt…
The broad tunability of the proximity exchange effect between transition-metal dichalcogenides (TMDCs) and chromium iodide (CrI$_3$) heterostructures offers intriguing possibilities for the use of TMDCs in two-dimensional magnetoelectrics. In this work, the influence of the twist angle and the gate electric field on the electric and thermal transport in a TMDC/CrI$_3$ junction is investigated using the Dirac -Bogoliubov-de Gennes equation. We show that significant amounts can be controlled by spin-splitting of band structures due to spin-orbit interaction, and that the exchange-splitting of ba…
We investigate the electronic transport property of lateral heterojunctions of semiconducting and metallic transition-metal dichalcogenide monolayers, MoSe$_2$ and NbSe$_2$, respectively. We calculate the electronic transmission probability by using a multi-orbital tight-binding model based on the first-principles band structure. The transmission probability depends on the spin and valley degrees of freedom. This dependence qualitatively changes by the interface structure. The heterostructure with a zig-zag interface preserves the spin and the valley of electron in the transmission process. On…
In transition metal dichalcogenides, defects have been found to play an important role, affecting doping, spin-valley relaxation dynamics, and assisting in proximity effects of spin-orbit coupling. Here, we study localized states in $\mathrm{WS}_2$ and how they affect tunneling through van der Waals heterostructures of h-BN/graphene/$\mathrm{WS}_2$/metal. The obtained conductance maps as a function of bias and gate voltage reveal single-electron transistor behavior (Coulomb blockade) with a rich set of transport features including excited states and negative differential resistance regimes. Ap…
Non-Majorana-origin of the half-integer conductance quantization elucidated by multi-terminal superconductor-quantum anomalous Hall insulator heterostructure
