MoS2/WSe2异质结晶体管局域电导的可视化
Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors
摘要：
范德华（vdW）材料的垂直堆叠为二维（2D）系统的研究引入了一个新的自由度。层间耦合强烈地影响异质结构的能带结构，从而产生可用于电子和光电子应用的新颖性质。基于微波显微镜的研究，我们报告的定量电成像门控二硫化钼（MoS2）/二硒化钨（WSe2）异质结构器件，表现出有趣的反双极效应的传输特性。有趣的是，在具有显著源极-漏极电流的区域中，n型MoS2中的电子和p型WSe2段中的空穴几乎平衡，而异质结构区域耗尽了移动电荷。该配置类似于p-i-n二极管，其中注入的载流子在复合电流中占主导地位。局域电导的空间演化可以归因于横向能带弯曲和沿MoS2-异质结构-WSe2线形成耗尽区。我们的工作生动地展示了新的输运行为的微观起源，这是重要的vdW异质结研究的充满活力的领域。
英文摘要：
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing anti-ambipolar effect in the transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The configuration is analogous to the p-i-n diode, where the injected carriers dominate in the recombination current. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.
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