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arXiv 1902.04530cond-mat.mtrl-sci
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二维碳基杂化材料XC(X = Si,Ge,Sn)的电子-声子动力学

Electron-phonon dynamics in 2D carbon based-hybrids XC (X = Si, Ge, Sn)

L. B. Drissi, N. B-J. Kanga, S. Lounis, F. Djeffal, S. Haddad

摘要:

在从头算微扰理论的框架下研究了SiC、GeC和SnC杂化材料中电子-声子(e-ph)耦合的影响。的电子爆炸间隙的热依赖性揭示了正常的单调下降的SiC和GeC半导体,而SnC表现出异常的行为。的电子线宽进行了评估和声学和光学声子模式的自能的虚部的贡献进行了测定。结果表明,e-ph散射速率在SiC中受面外声横模ZA的控制,而在GeC中受ZA和ZO的控制.在SnC中,面外横向光学模式ZO是最主要的。光激发电子的弛豫寿命表明,SiC、GeC和SnC中热载流子的热化分别发生在90 fs、100 fs和120 fs。本研究适当地描述了亚皮秒的时间尺度后,阳光照射使用的方法,不需要经验数据。研究结果使得所研究的结构适合于使用2D材料提供低成本和高性能的光通信和监控应用。

英文摘要:

The effect of the presence of electron-phonon (e-ph) coupling in the SiC, GeC and SnC hybrids is studied in the framework of the ab initio perturbation theory. The electronic bang gap thermal dependence reveals a normal monotonic decrease in the SiC and GeC semiconductors, whereas SnC exhibits an anomalous behavior. The electron line widths were evaluated and the contributions of acoustic and optical phonon modes to the imaginary part of the self-energy were determined. It has been found that the e-ph scattering rates are globally controlled by the out-of-plane acoustic transverse mode ZA in SiC while both ZA and ZO are overriding in GeC. In SnC, the out-of-plane transverse optical mode ZO is the most dominant. The relaxation lifetime of the photo-excited electrons shows that the thermalization of the hot carrier occurs at 90 fs, 100 fs and 120 fs in SiC, GeC and SnC, respectively. The present study properly describes the subpicosecond time scale after sunlight illumination using an approach that requires no empirical data. The results make the investigated structures suitable for providing low cost and high-performance optical communication and monitoring applications using 2D materials.

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