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arXiv 1902.02485cond-mat.mes-hall

Topological Edge States Induced by Zak's Phase in A3B Monolayers

Tomoaki Kameda, Feng Liu, Sudipta Dutta, Katsunori Wakabayashi

英文摘要:

In crystalline systems, charge polarization is related to Zak's phase determined by bulk band topology. Nontrivial charge polarization induces robust edge states accompanied with fractional charge. In Su-Schrieffer-Heeger (SSH) model, it is known that the strong modulation of electron hopping causes nontrivial charge polarization even in the presence of inversion symmetry. Here, we consider a bi-atomic honeycomb lattice to introduce such strong modulation, i.e. A$_3$B sheet. By tuning hopping ratio and onsite potential difference between A and B atoms, we show that topological phase transition characterized by Zak's phase occurs. Furthermore, we propose that C$_3$N and BC$_3$ are the possible realistic materials on the basis of first-principles calculations. Both of them display topological edge states induced by Zak's phase without spin-orbital couplings and external fields unlike conventional topological insulators.

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