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arXiv 1901.09306cond-mat.mtrl-scicond-mat.str-el
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二维Cr2Ge2Se6中具有大反常霍尔电导的应变诱导室温铁磁半导体

Strain-Induced Room-Temperature Ferromagnetic Semiconductors with Large Anomalous Hall Conductivity in Two-Dimensional Cr2Ge2Se6

Xue-Juan Dong, Jing-Yang You, Bo Gu, Gang Su

摘要:

通过密度泛函理论计算,我们预测了一个稳定的二维(2D)铁磁半导体Cr $_2$ Ge $_2$ Se $_6$,其中的居里温度$T$ $_c$可以显着提高超过室温,通过施加百分之几的应变。此外,2D Cr $_2$ Ge $_2$ Se $_6$和Cr $_2$ Ge $_2$ Te $_6$中的异常霍尔电导率被预测为与Fe和Ni的铁磁金属中的异常霍尔电导率相当,并且比稀磁半导体Ga(Mn,As)中的异常霍尔电导率大一个数量级。基于超交换相互作用,应变对二维Cr $_2$ Ge $_2$ Se $_6$中$T$ $_c$的增强可以通过Cr的3个$d$轨道和Se的4个$p$轨道之间能量差的减小来理解。我们的发现突出了通过应变获得室温铁磁半导体的微观机制。

英文摘要:

By density functional theory calculations, we predict a stable two-dimensional (2D) ferromagnetic semiconductor Cr$_2$Ge$_2$Se$_6$, where the Curie temperature $T$$_c$ can be dramatically enhanced beyond room temperature by applying a few percent strain. In addition, the anomalous Hall conductivity in 2D Cr$_2$Ge$_2$Se$_6$ and Cr$_2$Ge$_2$Te$_6$ is predicted to be comparable to that in ferromagnetic metals of Fe and Ni, and is an order of magnitude larger than that in diluted magnetic semiconductor Ga(Mn,As). Based on superexchange interactions, the enhanced $T$$_c$ in 2D Cr$_2$Ge$_2$Se$_6$ by strain can be understood by the decreased energy difference between 3$d$ orbitals of Cr and 4$p$ orbitals of Se. Our finding highlights the microscopic mechanism to obtain the room temperature ferromagnetic semiconductors by strain.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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