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arXiv 1901.01475cond-mat.mes-hallcond-mat.mtrl-sci
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垂直准二维器件中电荷密度波相变的低频噪声谱

Low-Frequency Noise Spectroscopy of Charge-Density-Wave Phase Transitions in Vertical Quasi-2D Devices

Ruben Salgado, Amirmahdi Mohammadzadeh, Fariborz Kargar, Adane Geremew, Chun-Yu Huang, Matthew A. Bloodgood, Sergey Rumyantsev, Tina T. Salguero, Alexander A. Balandin

摘要:

我们报告的结果,关于电子输运在垂直准二维层状1 T-TaS 2电荷密度波器件。低频噪声谱被用来作为一种工具,研究在室温以下的准二维材料的跨平面的电特性的变化。噪声谱密度在与电阻阶跃紧密匹配的温度下显示出强峰-变化超过一个数量级。一些噪声峰出现的温度下的相称的接近相称的电荷密度波过渡,可能表明存在争议的“隐藏”相变。这些结果证实了潜在的噪音光谱的电子输运和相变在新材料的调查。

英文摘要:

We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of the quasi-2D material below room temperature. The noise spectral density revealed strong peaks - changing by more than an order-of-magnitude - at the temperatures closely matching the electrical resistance steps. Some of the noise peaks appeared below the temperature of the commensurate to nearly-commensurate charge-density-wave transition, possibly indicating the presence of the debated "hidden" phase transitions. These results confirm the potential of the noise spectroscopy for investigations of electron transport and phase transitions in novel materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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