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arXiv 1809.00610cond-mat.mtrl-sci
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$a$ - Si3N4体系振动模的局域化性质

Localization properties of vibrational modes in $a$-Si3N4

Luigi Giacomazzi

摘要:

本文用第一性原理研究了非晶氮化硅($a$ -Si $_3$ N $_4$)中振动模的局域化性质。我们的研究进一步证实,在氮化硅的红外光谱中,在$\sim$ 471 cm $^{-1}$处的峰的振动模式主要由垂直于由三个Si最近邻定义的平面的方向上的氮运动组成。在$\sim$ 700 cm $^{-1}$以上,N-Si键的面内拉伸变得主要。特别地,在825 cm $^{-1}$处的红外峰下的振动模式由N-Si键拉伸运动产生。如果N-N同极键存在,我们表明,N-N键拉伸发生以上$\sim$ 1100厘米$^{-1}$。此外,我们还通过计算振动模的逆参与比(IPR)和相商,研究了振动模的局域化特性。从这一分析中,我们推断,模式以上600 cm $^{-1}$显示出逐步增加的本地化程度和光学行为,特别是超过1000 cm $^{-1}$。在大约650 cm $^{-1}$处,考虑到相当大的IPR值,并且基于对NSi $_3$单元的硅呼吸式运动的投影分析,我们认为振动模式可能涉及相邻SiN $_4$四面体的相关运动。

英文摘要:

We present a first-principles investigation of the localization properties of vibrational modes in amorphous silicon nitride ($a$-Si$_3$N$_4$). Our investigation further confirms that the vibrational modes underlying the peak at $\sim$471 cm$^{-1}$ in the infrared spectrum of silicon nitride mainly consist of nitrogen motion in the direction normal to the plane defined by the three Si nearest neighbors. In-plane stretching of N--Si bonds becomes largely dominant above $\sim$700 cm$^{-1}$. In particular vibrational modes underlying the infrared peak at 825 cm$^{-1}$ arise from the N--Si bond stretching motions. If N--N homopolar bonds were present, we show that N--N bond stretching occurs above $\sim$1100 cm$^{-1}$. Furthermore, we investigate the localization properties of vibrational modes by calculating their inverse participation ratio (IPR) and phase quotient. From this analysis we infer that modes above 600 cm$^{-1}$ shows a progressive increase of the localization degree and optic-like behavior, especially above 1000 cm$^{-1}$. At about 650 cm$^{-1}$, given the considerable IPR value, and on the basis of projectional analysis on silicon-breathing-like motions of the NSi$_3$ units, we suggest that vibrational modes may involve correlated motions of neighboring SiN$_4$ tetrahedra.

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