提出了一种在低温下测量毫秒级脉冲磁场中磁致伸缩的高分辨率方法，灵敏度为$1.11\times10^{-11}/\sqrt{\rm Hz}$。将样品粘合到薄压电板，使得当样品的长度改变时，其使压电体应变并引起电压变化。这种方法比光纤布拉格光栅方法更灵敏。它可以同时测量两个轴而不是一个轴。该真空计体积小，用途广泛，可在直流和毫秒脉冲磁场中工作。我们证明了它的使用通过测量钙$_3$钴$_{1.03}$锰$_{0.97}$ O $_6$单晶在脉冲磁场中的磁致伸缩。通过比较我们的数据，新的和以前发表的结果从光纤布拉格光栅磁致伸缩设置，我们确认，这种方法检测磁致伸缩效应。我们还证明了这种技术的小尺寸和多功能性，通过测量角度依赖于在65 T毫秒脉冲磁场中的转子探头中施加的磁场。
英文摘要：
We present a high resolution method for measuring magnetostriction in millisecond pulsed magnetic fields at cryogenic temperatures with a sensitivity of $1.11\times10^{-11}/\sqrt{\rm Hz}$. The sample is bonded to a thin piezoelectric plate, such that when the sample's length changes, it strains the piezoelectric and induces a voltage change. This method is more sensitive than a fiber-Bragg grating method. It measures two axes simultaneously instead of one. The gauge is small and versatile, functioning in DC and millisecond pulsed magnetic fields. We demonstrate its use by measuring the magnetostriction of Ca$_3$Co$_{1.03}$Mn$_{0.97}$O$_6$ single crystals in pulsed magnetic fields. By comparing our data to new and previously published results from a fiber-Bragg grating magnetostriction setup, we confirm that this method detects magnetostriction effects. We also demonstrate the small size and versatility of this technique by measuring angle dependence with respect to the applied magnetic field in a rotator probe in 65 T millisecond pulsed magnetic fields.
Note: Optical filter method for high-resolution magnetostriction measurement using fiber Bragg grating under millisecond-pulsed high magnetic fields at cryogenic temperatures
Improved magnetostructural and magnetocaloric reversibility in magnetic Ni-Mn-In shape-memory Heusler alloy by optimizing the geometric compatibility condition
本文报道了磁性形状记忆合金Ni $_{1.8}$ Mn $_{1.8}$ In $_{0.4}$的磁致伸缩可逆性和逆磁热效应的改善。我们表明，磁致伸缩和MCE的关键取决于奥氏体和马氏体相的几何相容性。从X射线衍射数据计算的变换矩阵中获得了关于两相相容性的详细信息。晶格参数的唯一性导致磁致伸缩和MCE的可逆性改善。在马氏体相变的热滞区，脉冲磁场作用下的最大相对长度变化为0.3%，绝热温度变化为$ΔT_{ad}\approx -10$ K。我们的研究结果表明，几何相容性的方法将允许一个设计材料的可逆磁致伸缩和可逆逆MCE在一阶磁结构相变的形状记忆Heusler合金。
Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films
我们证明了可再现的电压诱导的非易失性开关的磁化外延薄Fe 81 Ga 19膜。开关是在室温下诱导的，没有外部磁场的帮助。这是通过由附接到层的压电换能器引起的机械应变来修改磁各向异性来实现的。外延Fe81Ga19被证明具有良好的立方磁各向异性和大磁致伸缩的组合，以实现这一功能与实验可访问的应变水平。磁化的切换通过磁畴壁的运动进行，也由电压感应应变控制。
