All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is being explored for future ultrafast and energy-efficient magnetic storage and memories. It has been shown that femto-second light pulses induce magnetization reversal in a large variety of magnetic materials. However, so far, only GdFeCo-based ferrimagnetic thin films exhibit magnetization switching via a single optical pulse. Here we demonstrate the single-pulse switching of Co/Pt multilayers within a magnetic spin-valve structure ([Co/Pt] / Cu / GdFeCo) and further show that the four possible magnetic configurations of the spin valve can be accessed using a sequence of single femto-second light pulses. Our experimental study reveals that the magnetization final state of the ferromagnetic [Co/Pt] layer is determined by spin-polarized hot electrons generated by the light pulse interactions with the GdFeCo layer. This work provides a new approach to deterministically switch ferromagnetic layers and a pathway to engineering materials for opto-magnetic multi-bit recording.
We systematically investigated the spin wave-assisted magnetization switching (SWAS) of a L10-FePt / Ni81Fe19 (Permalloy; Py) exchange-coupled bilayer using a pulse-like rf field (hrf) and mapped the switching events in the magnetic field (H) - hrf frequency (f) plane to reveal the switching conditions. The switching occurred only in a limited region following the dispersion relationship of the perpendicular standing spin wave (PSSW) modes in Py. The results indicate that SWAS is a resonant magnetization switching process, which is different from the conventional microwave assisted switching, …
We have performed non-local spin injection into a nano-scale ferromagnetic particle configured in a lateral spin valve structure to switch its magnetization only by spin current. The non-local spin injection aligns the magnetization of the particle parallel to the magnetization of the spin injector. The responsible spin current for switching is estimated from the experiment to be about 200 $μ$A, which is reasonable compared with the values obtained for conventional pillar structures. Interestingly the switching always occurs from anti-parallel to parallel in the particle/injector magnetic conf…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel structures the possibility of an enhanced spin switching effect that, when normalized with respect to the current, is much bigger than that in multilayers. Some recent experimental results show evidence for the present picture.
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic instabilities via spin transfer torques (STT). At interface(s), spin current generated from the spin Hall effect in a neighboring layer can exert torques, referred to as the spin Hall torques, on the magnetic moments. Here, we study current induced magnetization switching in perpendicularly magnetized CoFeB/MgO heterostructures with a heavy metal (HM) underlayer. Dep…
Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is generally switched by applying external magnetic fields. Here we investigate current-induced spin-orbit torque (SOT) switching of the magnetization in Y3Fe5O12 (YIG)/Pt bilayers with in-plane magnetic anisotropy, where the switching is detected by spin Hall magnetoresistance. Reversible switching is found at room temperature for a threshold current density o…
We theoretically study the influence of a predominant field-like spin-orbit torque on the magnetization switching of small devices with a uniform magnetization. We show that for a certain range of ratios (0.23-0.55) of the Slonczewski to the field-like torques, it is possible to deterministically switch the magnetization without requiring any external assist field. A precise control of the pulse length is not necessary, but the pulse edge sharpness is critical. The proposed switching scheme is numerically verified to be effective in devices by micromagnetic simulations. Switching without any e…
Voltage-driven 180$^\circ$ magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180$^\circ$ magnetization switching at room temperature by combining first-principles calculations and temperature-dependent magnetization dynamics simulation. The electric field ($E$) induced interface charge is found to allow a giant modulation of the magnetic anisotropy ($K$) of the nanomagnet. Particularly $K$ is revealed to vary linearly with respect to $E$ and the epitaxial strain. Magnetization dynami…
We investigate the minimal field strength in precessional magnetization switching using the Landau-Lifshitz-Gilbert equation in under-critically damped systems. It is shown that precessional switching occurs when localized trajectories in phase space become unlocalized upon application of field pulses. By studying the evolution of the phase space, we obtain the analytical expression of the critical switching field in the limit of small damping for a magnetic object with biaxial anisotropy. We also calculate the switching times for the zero damping situation. We show that applying field along t…
The mechanisms of the magnetization switching of magnetic multilayers driven by a current are studied by including exchange interaction between local moments and spin accumulation of conduction electrons. It is found that this exchange interaction leads to two additional terms in the Landau-Lifshitz-Gilbert equation: an effective field and a spin torque. Both terms are proportional to the transverse spin accumulation and have comparable magnitudes.
We investigate different approaches towards a nonvolatile switching of the remanent magnetization in single-crystalline ferromagnets at room temperature via elastic strain using ferromagnetic thin film/piezoelectric actuator hybrids. The piezoelectric actuator induces a voltage-controllable strain along different crystalline directions of the ferromagnetic thin film, resulting in modifications of its magnetization by converse magnetoelastic effects. We quantify the magnetization changes in the hybrids via ferromagnetic resonance spectroscopy and superconducting quantum interference device magn…
Single-pulse switching has been experimentally demonstrated in ferrimagnetic GdFeCo and Mn$_2$Ru$_x$Ga alloys. Complete understanding of single-pulse switching is missing due to the lack of an established theory accurately describing the transition to the non-equilibrium reversal path induced by femtosecond laser photo-excitation. In this work we present general macroscopic theory for the magnetization dynamics of ferrimagnetic materials upon femtosecond laser excitation. Our theory reproduces quantitatively all stages of the switching process observed in experiments. We directly compare our t…
We show that dipole-field induced antiferromagnetic coupling, or RKKY ferromagnetic coupling, between Co layers can strongly affect the low magnetic field switching behavior of Co/Cu/Co nanopillars. Whereas current-assisted switching at low fields in uncoupled nanopillars is always hysteretic, strong coupling of either kind can change the switching to non-hysteretic (reversible). These differences can be understood with a simple picture of current-assisted thermal activation over a barrier.
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below 106 A/cm2. A recent work [Wang et al., Nature Mater., vol. 11, pp 64-68, Jan. 2012] has experimentally demonstrated the possibility to perform magnetization switching assisted by an electric-field at ultra-low current density. Theoretically, this switching has been studied by using a macrospin approach only. Here, we show a full micromagnetic study. We found t…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear with an applied current. Typical structures studied so far comprise a nonmagnet/ferromagnet (NM/FM) bilayer, where the spin Hall effect in the NM is responsible for the switching. Here we show that an antiferromagnet/ferromagnet (AFM/FM) bilayer system also exhibits a SOT large enough to switch the magnetization of FM. In this material system, thanks to the …
We compare magnetoresistances (MR) and switching currents (I_s) at room temperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoing current-induced magnetization switching (CIMS), with non-magnetic metals N = Cu, Ag, and Au. The N-metal thickness is held fixed at 10 nm. Any systematic differences in MR and I_s for the different N-metals are modest, suggesting that Ag and Au represent potentially viable alternatives for CIMS studies and devices to the more widely used Cu.
Electric field effect on magnetism is an appealing technique for manipulating the magnetization at a low cost of energy. Here, we show that the local magnetization of the ultra-thin Co film can be switched by just applying a gate electric field without an assist of any external magnetic field or current flow. The local magnetization switching is explained by the nucleation and annihilation of the magnetic domain through the domain wall motion induced by the electric field. Our results lead to external field free and ultra-low energy spintronic applications.
We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative orientations of the magnetic layers, and spin-dependent scattering properties of the interfaces and the bulk of the magnetic layers. We show how our data are explained in terms of current-dependent effective magnetic temperature.
We report the first demonstration of the current-induced magnetization switching in a perpendicularly magnetized A1 CoPt single layer. We show that good perpendicular magnetic anisotropy can be obtained in a wide composition range of the A1 Co1-xPtx single layers, which allows to fabricate perpendicularly magnetized CoPt single layer with composition gradient to break the inversion symmetry of the structure. By fabricating the gradient CoPt single layer, we have evaluated the SOT efficiency and successfully realized the SOT-induced magnetization switching. Our study provides an approach to rea…
Spin-orbit torque (SOT) provides an efficient way to achieve charge-to-spin conversion and can switch perpendicular magnetization, which is essential for designing novel energy-efficient spintronic devices. An out-of-plane SOT could directly switch perpendicular magnetization. Encouragingly, field-free perpendicular magnetization switching of a two-dimensional (2D) material WTe2/ferromagnet (FM) bilayer has been reported recently, but the working temperature (200 K) is below room temperature. Here, we report the field-free perpendicular magnetization switching carried out at room temperature o…
Current-induced magnetization switching through spin-orbit torques (SOTs) is the fundamental building block of spin-orbitronics. The SOTs generally arise from the spin-orbit coupling of heavy metals. However, even in a heterostructure where a metallic magnet is sandwiched by two different insulators, a nonzero current-induced SOT is expected because of the broken inversion symmetry; an electrical insulator can be a spin-torque generator. Here, we demonstrate current-induced magnetization switching using an insulator. We show that oxygen incorporation into the most widely used spintronic materi…
Inplane magnetization reversal of a permalloy/platinum bilayer was detected using the spin rectification effect. Using a sub GHz microwave frequency to excite spin torque ferromagnetic resonance (ST FMR) in the bilayer induces two discrete DC voltages around an external static magnetic field of 0 mT. These discrete voltages depend on the magnetization directions of the permalloy and enable detection of the inplane magnetization reversal. The threshold current density for the magnetization reversal is from 10 to 20 MA/cm^2, the same order as for known spin orbit torque (SOT) switching with in-p…
Despite intense experimental effort, theoretical proposals and modeling approaches, a lack of consensus exists about the intrinsic mechanisms driving ultrafast magnetization dynamics in 3$d$ ferromagnets. In this work, we find evidence of electron-phonon mediated spin-flip as the driving mechanism for the ultrafast magnetization dynamics in all three 3$d$ ferromagnets; nickel, iron and cobalt. We use a microscopic three temperature model with parameters calculated from first-principles, which has been validated by direct comparison to the electron and lattice dynamics extracted from previous e…
A major challenge in spin-based electronics is reducing power consumption for magnetization switching of ferromagnets, which is being implemented by injecting a large spin-polarized current. The alternative approach is to control the magnetic anisotropy (MA) of the ferromagnet by an electric field. However, the voltage-induced MA is too weak to deterministically switch the magnetization without an assisting magnetic field, and the strategy towards this goal remains elusive. Here, we demonstrate a new scheme of orbital-controlled magnetization switching (OCMS): A sharp change in the MA is induc…
Magnetization manipulation in the absence of an external magnetic field is a topic of great interest, since many novel physical phenomena need to be understood and promising new applications can be imagined. Cutting-edge experiments have shown the capability to switch the magnetization of magnetic thin films using ultrashort polarized laser pulses. In 2007, it was first observed that the magnetization switching for GdFeCo alloy thin films was helicity-dependent and later helicity-independent switching was also demonstrated on the same material. Recently, all-optical switching has also been dis…
Magnetic tunnel junctions (MTJ) have been grown by using molecular beam epitaxy on c-plane Al2O3 substrates. The MTJ stacks consist of two ferromagnetic hcp-Co layers separated by a thin insulating h-BN barrier. The samples have been grown in a single run revealing single crystalline epitaxial structures with sharp interfaces as observed by applying transmission electron microscopy. The in-plane magnetization experiments have revealed separate magnetization switching of a thin top Co (soft) layer and a thick bottom Co (hard) layer. At zero magnetic field the two Co layers are found in an antip…
Using time-resolved magneto-optical Kerr effect (TR-MOKE) method, helicity-dependent all-optical magnetization switching (HD-AOS) is observed in ferrimagnetic TbFeCo films. The thermal effect and opto-magneto effects are separately justified after single circularly polarized laser pulse. The integral evolution of this ultrafast switching is characterized on different time scales and the defined magnetization reversal time of 460 fs is the fastest ever observed. Combining the heat effect and inverse Faraday effect (IFE), micromagnetic simulations based on a single macro-spin model are performed…
We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs connected to the storage nodes of a standard SRAM cell with CIMS architecture enables fully electrical store and restore operations for nonvolatile logic information. The proposed NV-SRAM is expected to be a key component of next-generation power-gating logic systems with extremely low static-power dissipation.
Energy-efficient control of magnetization without the help of a magnetic field is a key goal of spintronics. Purely heat-induced single-pulse all-optical toggle switching has been demonstrated, but so far only in Gd based amorphous ferrimagnet films. In this work, we demonstrate toggle switching in the half-metallic compensated ferrimagnetic Heusler alloys Mn2RuxGa, which have two crystallographically-inequivalent Mn sublattices. Moreover, we observe the switching at room temperature in samples that are immune to external magnetic fields in excess of 1 T, provided they exhibit compensation abo…
First-principles density-functional theory calculations show switching magnetization by 90 degree can be achieved in ultrathin BFO film by applying external electric-field. Up-spin carriers appear to the surface with positive field while down-spin ones to the negative field surface, arising from the redistribution of Fe-t2g orbital. The half-metallic behavior of Fe-3d states in the surface of R phase film makes it a promising candidate for AFM/FM bilayer heterostructure possessing electric-field tunable FM magnetization reversal and opens a new way towards designing spintronic multiferroics. T…
Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal nanopillars. We show all four combinations of normal and inverse behaviors, at both room temperature and 4.2K. In all cases studied, the direction of switching is set by the net scattering anisotropy of the fixed (polarizing) ferromagnet. We provide simple arguments for what we see.
Identifying an efficient pathway to change the order parameter via a subtle excitation of the coupled high-frequency mode is the ultimate goal of the field of ultrafast phase transitions. This is an especially interesting research direction in magnetism, where the coupling between spin and lattice excitations is required for magnetization reversal. Despite several attempts however, the switching between magnetic states via resonant pumping of phonon modes has not yet been demonstrated. Here we show how an ultrafast resonant excitation of the longitudinal optical phonon modes in magnetic garnet…
An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magnetic anisotropy parameters through inverse magneto-striction, which triggers precession, and eventually reversal. Using the micromagnetic parameters of a fully characterized layer of the magnetic semic…
Using photo-emission electron microscopy with X-ray magnetic circular dichroism as a contrast mechanism, new insights into the all-optical magnetization switching (AOS) phenomenon in GdFe based rare-earth transition metal ferrimagnetic alloys are provided. From a sequence of static images taken after single linearly polarized laser pulse excitation, the repeatability of AOS can be measured with a correlation coefficient. It is found that low coercivity enables thermally activated domain wall motion, limiting in turn the repeatability of the switching. Time-resolved measurement of the magnetiza…
We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = lambda/t greater than or equal to 3 for a Cu spacer layer, and diffusive to r = lambda/t less than or equal to 0.4 for a CuGe alloy spacer layer, where lambda is the mean-free-path in the N-layer of fixed thickness t = 10 nm. The average switching currents for the alloy spacer layer are only modestly larger…
Electrical manipulation of magnetization is essential for integration of magnetic functionalities such as magnetic memories and magnetic logic devices into electronic circuits. The current induced spin-orbit torque (SOT) in heavy metal/ferromagnet (HM/FM) bilayers via the spin Hall effect in the HM and/or the Rashba effect at the interfaces provides an efficient way to switch the magnetization. In the meantime, current induced SOT has also been used to switch the in-plane magnetization in single layers such as ferromagnetic semiconductor (Ga,Mn)As and antiferromagnetic metal CuMnAs with global…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and out-of-plane anisotropy respectively, are separated by a spacer Ta layer, which plays a dual role of inducing antiferromagnetic interlayer coupling, and contributing to the current-induced effective magnetic field through the spin Hall effect. The current-induced magnetization switching behavior can be tuned by pre-magnetizing the in-plane Co layer. The antiferrom…
The theoretical limit of the minimal magnetization switching field and the optimal field pulse design for uniaxial Stoner particles are investigated. Two results are obtained. One is the existence of a theoretical limit of the smallest magnetic field out of all possible designs. It is shown that the limit is proportional to the damping constant in the weak damping regime and approaches the Stoner-Wohlfarth (SW) limit at large damping. For a realistic damping constant, this limit is more than ten times smaller than that of so-called precessional magnetization reversal under a non-collinear stat…
A new way of magnetization switching employing both the spin-transfer torque and the torque by a magnetic field is proposed. The solution of the Landau-Lifshitz-Gilbert equation shows that the dynamics of the magnetization in the initial stage of the switching is similar to that in the precessional switching, while that in the final stage is rather similar to the relaxing switching. We call the present method the relaxing-precessional switching. It offers a faster and lower-power-consuming way of switching than the relaxing switching and a more controllable way than the precessional switching.
We investigate the effect of Al doping on the magnetic properties of the alloy CoFeB. Comparative measurements of the saturation magnetization, the Gilbert damping parameter $α$ and the exchange constant as a function of the annealing temperature for CoFeB and CoFeAlB thin films are presented. Our results reveal a strong reduction of the magnetization for CoFeAlB in comparison to CoFeB. If the prepared CoFeAlB films are amorphous, the damping parameter $α$ is unaffected by the Al doping in comparison to the CoFeB alloy. In contrast, in the case of a crystalline CoFeAlB film, $α$ is found to be…
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C are found to be as low as 7.8 x 10^5 A/cm^2 and 8.8 x 10^5 A/cm^2 with accompanying tunnel magnetoresistance (TMR) ratios of 49% and 73 %, respectively. Further annealing of the samples at 350C increases TMR ratio to 160 %, while accompanying Jc increases to 2.5 x 10^6 A/cm^2. We attribute the low Jc to the high spin-polarization of tunnel current and small …
Domain-Wall Mediated Polarization Switching in Ferroelectric AlScN: Strain Relief and Field-Dependent Dynamics
Jilin University（吉林大学）；University of Arkansas（阿肯色大学）；Guangdong Technion – Israel Institute of Technology（广东以色列理工学院）；Technion – Israel Institute of Technology（以色列理工学院）
研究铁电AlScN中极化开关机制，发现域壁通过缓解应变导致场依赖的开关动力学，提出通过域工程调控 coercive field 的策略。
Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular magnetic anisotropy that are demanded by the high-density magnetic storage and memory devices. Here, we demonstrate that this limitation can be overcome by exploiting a magnetic spin Hall effect in noncollinear antiferromagnets, such as Mn3Sn. The magnetic group symmetry of Mn3Sn allows generation of the out-of-plane spin current carrying spin polarization induc…
This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered structure on MgO(001) substrates. The SOT was characterized by harmonic Hall measurements in a Co2MnGa/Ti/CoFeB heterostructure and a relatively large spin Hall efficiency of -7.8% was obtained.The SOT-induced magnetization switching of the perpendicularly magnetized CoFeB layer was further demonstrated using the structure. The symmetry of second harmonic signals, t…
Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol. 8, 587 (2013); Qiu et al., Sci. Rep. 4, 4491 (2014)]. We theoretically investigate magnetization switching and domain wall motion in a perpendicularly magnetized layer, induced by angle-dependent spin-orbit torque. We obtain analytic expressions of the switching current and domain wall velocity, in agreement with numerical results. Based on the expressions, w…
Generalized Helicity-Dependent Magnetization Switching via Substrate Phonons
Radboud University（拉德堡德大学）；HFML-FELIX, Radboud University（哈塞尔巴赫磁学实验室-自由电子激光设施，拉德堡德大学）；Radboud University, Institute for Molecules and Materials（拉德堡德大学分子与材料研究所）；College of Science and Technology, Nihon University（日本大学生命理工学部）
We have measured the in-plane angular variation of nucleation and annihilation fields of a multi-domain magnetic single dot with a microsquid. The dots are Fe/Mo(110) self-assembled in UHV, with sub-micron size and a hexagonal shape. The angular variations were quantitatively reproduced by micromagnetic simulations. Discontinuities in the variations are observed, and shown to result from bifurcations related to the interplay of the non-uniform magnetization state with the shape of the dot.
We investigate current-induced magnetization switching for a multilayer structure that allows a reduced switching current while maintaining high thermal stability of the magnetization. The structure consists of a perpendicular polarizer, a perpendicular free-layer, and an additional free-layer having in-plane magnetization. When the current runs perpendicular to the structure, the in-plane free-layer undergoes a precession and supplies an internal rf field to the perpendicular free-layer, resulting in a reduced switching current for one current polarity. For the other polarity, the in-plane fr…
The magnetization switching dynamics of biaxial single-domain homogeneous ferromagnetic particles, in which the two easy axes are perpendicular to each other, is simulated using a 4-state clock model. A zero-field mapping of the statics between the symmetric 4-state clock model and two decoupled Ising models is extended to non-zero field statics and to the dynamics. This significantly simplifies the analysis of the simulation results. We measure the magnetization switching time of the model and analyze the results using droplet theory. The switching dynamics in the asymmetric model is more com…
Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state, resulting in "non-toggle" switching. T…
