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arXiv 1805.01992cond-mat.mtrl-sci
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PbTe/SnTe异质结构中的破镜对称性调谐拓扑输运

Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures

Feng Wei, Chieh-Wen Liu, Da Li, Chun-Yang Wang, Hong-Rui Zhang, Ji-rong Sun, Xuan P. A. Gao, Song Ma, Zhidong Zhang

摘要:

拓扑表面态的可调谐性和狄拉克能隙的可控打开对于拓扑材料的应用具有重要意义。在拓扑晶体绝缘体(TCI)中,晶体的对称性和能带的拓扑性相互交织,形成拓扑表面态,从而通过晶格的对称性破缺结构变化来调制狄拉克能隙。通过对由p型拓扑晶体绝缘体SnTe和n型常规半导体PbTe组成的异质结的输运测量,我们发现在PbTe/SnTe界面处由狄拉克费米子引起的巨线性磁电阻(在2K、14 T下高达2150%)。相反,在100 K以下,PbTe/SnTe样品表现出SnTe晶格的立方到菱面体结构的相变和弱的反局域化效应。这种独特的磁电阻行为归因于镜面对称性的破缺和拓扑表面态的能隙。我们的工作为未来基于TCI异质结构的磁电子学和自旋电子学提供了一个有前途的应用。

英文摘要:

The tunability of topological surface states and controllable opening of the Dirac gap are of great importance to the application of topological materials. In topological crystalline insulators (TCIs), crystal symmetry and topology of electronic bands intertwine to create topological surface states and thus the Dirac gap can be modulated by symmetry breaking structural changes of lattice. By transport measurement on heterostructures composed of p-type topological crystalline insulator SnTe and n-type conventional semiconductor PbTe, here we show a giant linear magnetoresistance (up to 2150% under 14 T at 2 K) induced by the Dirac Fermions at the PbTe/SnTe interface. In contrast, PbTe/SnTe samples grown at elevated temperature exhibit a cubic-to-rhombohedral structural phase transition of SnTe lattice below 100 K and weak antilocalization effect. Such distinctive magneto-resistance behavior is attributed to the broken mirror symmetry and gapping of topological surface states. Our work provides a promising application for future magneto-electronics and spintronics based on TCI heterostructures.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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