III-V三栅量子阱MOSFET：10 nm及以上工艺的量子弹道模拟研究
III-V Tri-Gate Quantum Well MOSFET: Quantum Ballistic Simulation Study for 10nm Technology and Beyond
摘要：
在这项工作中，量子弹道模拟研究的III-V族三栅MOSFET已经提出。同时，观察并给出了器件参数变化对弹道、亚阈值和短沟道性能的影响。弹道模拟结果也被用来观察该器件的静电性能和电容-电压特性。随着不断追求与摩尔定律保持同步，以及积极的缩放和接近弹道极限的器件操作，有必要在10 nm栅极长度上进行完整的量子输运研究。我们的模拟揭示了增加沟道横截面的器件漏极电流的增加。但随着信道截面的增大，短信道性能和亚阈值性能逐渐下降。增加器件横截面降低了器件的阈值电压。还观察了栅氧化层厚度对弹道器件性能的影响。顶部栅极氧化层厚度的增加仅在一定范围内影响器件性能。然而，顶栅氧化层的厚度对器件阈值电压没有明显的影响。弹道模拟研究已被进一步用于提取弹道注入载流子的速度和弹道载流子迁移率在沟道中。器件尺寸和栅氧化层厚度对弹道速度和有效载流子迁移率的影响也被提出。
英文摘要：
In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthrshold and short channel performance is observed and presented. The ballistic simulation result has also been used to observe the electrostatic performance and Capacitance-Voltage characteristics of the device. With constant urge to keep in pace with Moore's law as well as aggressive scaling and device operation reaching near ballistic limit, a full quantum transport study at 10nm gate length is necessary. Our simulation reveals an increase in device drain current with increasing channel cross-section. However short channel performance and subthreshold performance get degraded with channel cross-section increment. Increasing device cross-section lowers threshold voltage of the device. The effect of gate oxide thickness on ballistic device performance is also observed. Increase in top gate oxide thickness affects device performance only upto a certain value. The thickness of the top gate oxide however shows no apparent effect on device threshold voltage. The ballistic simulation study has been further used to extract ballistic injection velocity of the carrier and ballistic carrier mobility in the channel. The effect of device dimension and gate oxide thickness on ballistic velocity and effective carrier mobility is also presented.
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