用非平衡格林函数法计算三栅极和FinFET器件的接触电阻
Contact resistances in trigate and FinFET devices in a Non-Equilibrium Green's Functions approach
摘要：
我们计算的接触电阻$R_{\rm c}$在三栅极和FinFET器件的宽度和高度在4至24 nm的范围内，使用非平衡格林函数的方法。考虑了电子-声子、表面粗糙度和库仑散射。我们发现，$R_{\rm c}$代表了一个显着的一部分，总电阻的子30 nm的栅极长度的设备。准费米能级分布的分析表明，重掺杂的源/漏极和栅极之间的间隔物是接触电阻的主要贡献者。电导确实受到对间隔物下的载流子密度的不良静电控制的限制。然后，我们解开的弹道和扩散组件的$R_{\rm c}$，并分析了不同的设计参数（截面和掺杂分布的接触）的电性能的影响。当沟道的横截面积低于$\simeq 50$ nm $^2$时，接触电阻和可变性迅速增加。我们还强调了在硅和间隔材料之间的界面处捕获的电荷的作用。
英文摘要：
We compute the contact resistances $R_{\rm c}$ in trigate and FinFET devices with widths and heights in the 4 to 24 nm range using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that $R_{\rm c}$ represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the quasi-Fermi level profile reveals that the spacers between the heavily doped source/drain and the gate are major contributors to the contact resistance. The conductance is indeed limited by the poor electrostatic control over the carrier density under the spacers. We then disentangle the ballistic and diffusive components of $R_{\rm c}$, and analyze the impact of different design parameters (cross section and doping profile in the contacts) on the electrical performances of the devices. The contact resistance and variability rapidly increase when the cross sectional area of the channel goes below $\simeq 50$ nm$^2$. We also highlight the role of the charges trapped at the interface between silicon and the spacer material.
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