用于MOSFET和纳米生物传感器的三层TMDC异质结构
Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors
摘要：
过渡金属二硫属化合物（Transition Metal Dichalcogenides，TMDC）及其二层/三层异质结材料由于在电子学和光电子学领域具有广阔的应用前景，近年来成为研究热点。在这项工作中，我们探索了三层TMDC异质结构（MoS 2/MX2/MoS 2; M=Mo或，W和X=S或，Se）金属氧化物半导体场效应晶体管（MOSFET）在量子弹道制度的器件级性能。我们的模拟表明，器件的“开”电流可以通过在两个二硫化钼单层之间插入WS 2单层来提高。双轴拉伸应变的应用揭示了漏极电流的减少，这可以归因于载流子的有效质量随着拉伸应变的增加而降低。此外，发现栅极欠重叠几何形状通过改善亚阈值摆幅来改善静电器件性能。然而，沟道电阻的增加降低了漏极电流。除了探索这些材料在器件性能方面的前景外，还提出了新型三层TMDC异质结构双栅场效应晶体管（FET）用于传感纳米生物分子以及用于pH传感。底栅操作确保这些FET的操作超过能斯特极限的59 mV/pH值。在这项工作中发现的模拟结果表明，底栅氧化物的缩放导致更好的灵敏度，而顶部氧化物缩放表现出相反的趋势。还发现，对于相同的操作条件，所提出的TMDC FET pH传感器显示出超能斯特灵敏度，表明这些材料是实现这种传感器的潜在候选者。除pH传感外，所有这些材料作为纳米生物传感器中的沟道材料在亚阈值区显示出高灵敏度，而MoS 2/WS 2/MoS 2 FET在它们中显示出最低的灵敏度。
英文摘要：
Two dimensional materials such as Transition Metal Dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation in recent years due to their promising applications in electronics and optoelectronics. In this work, we have explored device level performance of trilayer TMDC heterostructure (MoS2/MX2/MoS2; M=Mo or, W and X=S or, Se) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in the quantum ballistic regime. Our simulation shows that device 'on' current can be improved by inserting a WS2 monolayer between two MoS2 monolayers. Application of biaxial tensile strain reveals a reduction in drain current which can be attributed to the lowering of carrier effective mass with increased tensile strain. In addition, it is found that gate underlap geometry improves electrostatic device performance by improving sub-threshold swing. However, increase in channel resistance reduces drain current. Besides exploring the prospect of these materials in device performance, novel trilayer TMDC heterostructure double gate Field Effect Transistors (FETs) are proposed for sensing Nano biomolecules as well as for pH sensing. Bottom gate operation ensures these FETs operating beyond Nernst limit of 59 mV/pH. Simulation results found in this work reveal that scaling of bottom gate oxide results in better sensitivity while top oxide scaling exhibits an opposite trend. It is also found that, for identical operating conditions, proposed TMDC FET pH sensors show super-Nernst sensitivity indicating these materials as potential candidates in implementing such sensor. Besides pH sensing, all these materials show high sensitivity in the sub-threshold region as a channel material in nanobiosensor while MoS2/WS2/MoS2 FET shows the least sensitivity among them.
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