arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1801.08440cond-mat.mes-hall
收藏

宽带极限下的瞬态电荷和能流

Transient charge and energy flow in the wide-band limit

F. Covito, F. G. Eich, R. Tuovinen, M. A. Sentef, A. Rubio

摘要:

宽带极限是分析纳米器件传输的常用近似值。在这项工作中,我们调查其适用性的电荷和热传输的研究,通过暴露于电压偏置和温度梯度的分子断裂结。我们发现,虽然这种近似忠实地描述了长时间的电荷和热输运,它未能表征的结的短时间行为。特别是,我们发现,流过设备的充电电流显示出不连续性时,施加温度梯度,而能量流是不连续的,当电压偏置被打开,甚至发散时,结暴露于温度梯度和电压偏置。我们为这种病态行为提供了一种解释,并提出了两种可能的解决方案。

英文摘要:

The wide-band limit is a commonly used approximation to analyze transport through nanoscale devices. In this work we investigate its applicability to the study of charge and heat transport through molecular break junctions exposed to voltage biases and temperature gradients. We find that while this approximation faithfully describes the long-time charge and heat transport, it fails to characterize the short-time behavior of the junction. In particular, we find that the charge current flowing through the device shows a discontinuity when a temperature gradient is applied, while the energy flow is discontinuous when a voltage bias is switched on and even diverges when the junction is exposed to both a temperature gradient and a voltage bias. We provide an explanation for this pathological behavior and propose two possible solutions to this problem.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑