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arXiv 1709.04512physics.optics
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集成波导布里渊Laser

Integrated Waveguide Brillouin Laser

Sarat Gundavarapu, Matthew Puckett, Taran Huffman, Ryan Behunin, Jianfeng Wu, Tiequn Qiu, Grant M. Brodnik, Cátia Pinho, Debapam Bose, Peter T. Rakich, Jim Noha… 展开作者

Sarat Gundavarapu, Matthew Puckett, Taran Huffman, Ryan Behunin, Jianfeng Wu, Tiequn Qiu, Grant M. Brodnik, Cátia Pinho, Debapam Bose, Peter T. Rakich, Jim Nohava, Karl D. Nelson, Mary Salit, Daniel J. Blumenthal

摘要:

对高性能芯片级激光器的需求推动了集成光子学的快速增长。这种低噪声激光源的产生对于新兴的片上应用至关重要,这些应用包括相干光通信、光子微波振荡器遥感和光学旋转传感器。虽然布里渊激光器是解决这些挑战的一种有前途的解决方案,但需要新的策略来通过晶圆级集成来创建鲁棒、紧凑、低功率和低成本的布里渊激光器技术。迄今为止,由于在商业集成平台上实现这些激光器的困难,芯片级布里渊激光器仍然难以捉摸。在本文中,我们展示了,第一次,单片集成布里渊激光器使用的晶圆级工艺的基础上超低损耗Si 3 N4/SiO2波导平台。级联的受激布里渊激光到10斯托克斯订单中观察到的集成总线耦合谐振器的加载Q因子超过28万。我们实验量化了激光器的性能,包括阈值,斜率效率和级联动力学,并与理论结果进行了比较。大模体积集成谐振器和增益介质支持仅TE谐振和独特的2.72 GHz自由光谱范围,这对于高性能集成布里渊激光至关重要。该激光器是基于一个非声学的指导设计,提供了广泛的布里渊增益带宽。由于腔内光功率大,阈值功率低,高性能的激光特性得到了证实。一致的激光器性能报告的多个芯片跨越多个晶圆。这种设计适合于在芯片上实现实用的高产量、高相干布里渊激光器的晶片级集成。

英文摘要:

The demand for high-performance chip-scale lasers has driven rapid growth in integrated photonics. The creation of such low-noise laser sources is critical for emerging on-chip applications, ranging from coherent optical communications, photonic microwave oscillators remote sensing and optical rotational sensors. While Brillouin lasers are a promising solution to these challenges, new strategies are needed to create robust, compact, low power and low cost Brillouin laser technologies through wafer-scale integration. To date, chip-scale Brillouin lasers have remained elusive due to the difficulties in realization of these lasers on a commercial integration platform. In this paper, we demonstrate, for the first time, monolithically integrated Brillouin lasers using a wafer-scale process based on an ultra-low loss Si3N4/SiO2 waveguide platform. Cascading of stimulated Brillouin lasing to 10 Stokes orders was observed in an integrated bus-coupled resonator with a loaded Q factor exceeding 28 million. We experimentally quantify the laser performance, including threshold, slope efficiency and cascading dynamics, and compare the results with theory. The large mode volume integrated resonator and gain medium supports a TE-only resonance and unique 2.72 GHz free spectral range, essential for high performance integrated Brillouin lasing. The laser is based on a non-acoustic guiding design that supplies a broad Brillouin gain bandwidth. Characteristics for high performance lasing are demonstrated due to large intra-cavity optical power and low lasing threshold power. Consistent laser performance is reported for multiple chips across multiple wafers. This design lends itself to wafer-scale integration of practical high-yield, highly coherent Brillouin lasers on a chip.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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