Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBi2Se4 /Bi2Se3 heterostructure which was fabricated by self-assembling a MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the co-deposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBi2Se4 /Bi2Se3 heterostructure shows ferromagnetism up to room temperature and a clear Dirac-cone gap opening of ~100 meV without any other significant changes in the rest of the band structure. It can be considered as a result of the direct interaction of the surface Dirac cone and the magnetic layer rather than a magnetic proximity effect. This spontaneously formed self-assembled heterostructure with a massive Dirac spectrum, characterized by a nontrivial Chern number C = -1, has a potential to realize the QAHE at significantly higher temperatures than reported up to now and can serve as a platform for developing future " topotronics" devices.
We use first-principles calculations to investigate the adsorption and incorporation of non-metal impurities (N, C) at the anatase TiO$_2$(001)-(1$\times$4) reconstructed surface. We analyze in detail the influence of the surface structure and local strain on the impurity binding sites and incorporation pathways and identify important intermediates which facilitate impurity incorporation. We find various subsurface interstitial binding sites and corresponding surface $\rightarrow$ subsurface penetration pathways on the reconstructed surface. This surface also favors the presence of subsurface …
The incorporation of oxygen atoms has been simulated into either nitrogen or uranium vacancy at the UN(001) surface, sub-surface or central layers. For calculations on the corresponding slab models both the relativistic pseudopotentials and the method of projector augmented-waves (PAW) as implemented in the VASP computer code have been used. The energies of O atom incorporation and solution within the defective UN surface have been calculated and discussed. For different configurations of oxygen ions at vacancies within the UN(001) slab, the calculated density of states and electronic charge r…
Secondary-ion Mass Spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium containing nitride semiconductor multilayer heterostructures: ScxGa1-xN/GaN and ScxAl1-xN/AlN grown by molecular beam epitaxy (MBE). In the ScxGa1-xN/GaN heterostructure grown in metal rich conditions on GaN-SiC template substrates with Sc contents up to 28 atomic percent, the oxygen concentration is found to be below 1x1019/cm3, with an increase directly correlated with the Scandium content. In the ScxAl1-xN-AlN heterostructure grown in nitrogen rich conditions on AlN-Al2O3…
Depth-resolved cathodoluminescence spectroscopy of atomically flat TiO2-terminated SrTiO3 single crystal surfaces reveals dramatic differences in native point defects produced by conventional etching with buffered HF (BHF) and an alternative procedure using HCl-HNO3 acidic solution (HCLNO), which produces three times fewer oxygen vacancies before and nearly an order of magnitude fewer after pure oxygen annealing. BHF-produced defect densities extend hundreds of nm below the surface, whereas the lower HCLNO-treated densities extend less than 50 nm. This "Arkansas" HCLNO etch and anneal method a…
Iron oxides (FeOx) are among the most common support materials utilized in single atom catalysis. The support is nominally Fe2O3, but strongly reductive treatments are usually applied to activate the as-synthesized catalyst prior to use. Here, we study Rh adsorption and incorporation on the (1-102) surface of hematite (α-Fe2O3), which switches from a stoichiometric (1x1) termination to a reduced (2x1) reconstruction in reducing conditions. Rh atoms form clusters at room temperature on both surface terminations, but Rh atoms incorporate into the support lattice as isolated atoms upon annealing …
Self-selective growth of GaAs1-xBix on GaAs zinc blende/wurtzite nanowire heterostructures
Lund University（隆德大学）；NanoLund, Lund University（隆德大学纳米隆德）；Centre for Analysis and Synthesis, Lund University（隆德大学分析与合成中心）；MAX IV Laboratory, Lund University（隆德大学MAX IV实验室）；Niels Bohr Institute, University of Copenhagen（哥本哈根大学尼尔斯玻尔研究所）
Van der Waals heterostructures (vdWHs) combine different layered materials with properties of interest,1 such as two-dimensional (2D) semimetals, semiconductors, magnets or superconductors. These heterostructures provide the possibility of engineering new materials with emergent functionalities that are not accessible in another way. Beyond inorganic 2D materials, layered molecular materials remain still rather unexplored, with only few examples regarding their isolation as atomically thin-layers. By a proper chemical design, the physical properties of these systems can be tuned, as illustrate…
Hydrogen (deuterium) dynamics and thermal stability in ion-irradiated platinum-hydride thin films synthesized at low temperature
Institute of Industrial Science, The University of Tokyo（东京大学工业科学研究所）；School of Materials and Chemical Technology, Institute of Science Tokyo（东京科学大学材料化学技术学院）；Department of Chemistry, The University of Tokyo（东京大学化学系）；Advanced Science Research Center, Japan Atomic Energy Agency（日本原子力研究开发机构先进科学研究中心）
The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properti…
Growth of GaMnAs by molecular beam epitaxy is typically performed at low substrate temperatures (250C) and high As overpressures leading to the incorporation of excess As and Mn interstitials, which quench optical signals such as photoluminescence (PL). We report on optical-quality Ga(1-x)Mn(x)As/Al(0.4)Ga(0.6)As quantum wells (QWs) with x < 0.2% grown at a substrate temperature of 400C. Electrical and structural measurements demonstrate that this elevated temperature reduces As defects while allowing the substitutional incorporation of Mn into Ga sites. From a combination of Hall and secondar…
Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving independent control of electronic doping in the ferromagnetic semiconductor (Ga,Mn)As. Samples are comprised of superlattices of 0.5 monolayer (ML) MnAs alternating with 20 ML GaAs and are grown by low temperature (230 C) atomic layer epitaxy (ALE). This allows for the reduction of excess As incorporation and hence the number of charge-compensating As-relate…
Two-dimensional (2D) van der Waals (vdW) materials show a range of profound physical properties that can be tailored through their incorporation in heterostructures and manipulated with external forces. The recent discovery of long-range ferromagnetic order down to atomic layers provides an additional degree of freedom in engineering 2D materials and their heterostructure devices for spintronics, valleytronics and magnetic tunnel junction switches. Here, using direct imaging by cryo-Lorentz transmission electron microscopy we show that topologically nontrivial magnetic-spin states, skyrmionic …
The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits…
Competition between clustering and dispersion of cobalt atoms on perovskite surfaces: SrTiO3(001) and KTaO3(001)
Charles University（查理大学）；University of the Basque Country UPV/EHU（巴斯克大学）；CNR – Istituto Officina dei Materiali (IOM)（意大利国家研究委员会材料研究所）；Slovak Academy of Sciences（斯洛伐克科学院）；Jagiellonian University（雅盖隆大学）
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in magnetostrictive/piezoelectric systems may pave the way toward ultra low-power electronics. Although the former effect has been demon-strated in several multiferroic heterostructures, the incorporation of such complex geometries into practical magnetic memory and logic nanodevices has been lacking. Here, we demonstrate the room temperature control of a domain wall gate with an elec…
Dilute magnetic semiconductors, achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room-temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels…
Array-patterned CoPd-based heterostructures are created through e-beam lithography and plasma pretreatment that induces oxidation with depth gradient in the CoPd alloy films, breaking the central symmetry of the structure. Effects on the magnetic properties of the follow-up hydrogenation of the thin film are observed via magneto-optic Kerr effect microscopy. The system exhibits strong vertical and lateral antiferromagnetic coupling in the perpendicular component between the areas with and without plasma pretreatment, and asymmetric domain-wall propagation in the plasma-pretreated areas during …
Polarization effects are included exactly in a model for a quantum dot in close proximity to a planar interface. Efficient incorporation of this potential into the Schrödinger equation is utilized to map out the influence of the image potential effects on carrier tunneling in such heterostructures. In particular, the interplay between carrier mass and the dielectric constants of a quantum dot, its surrounding matrix, and the electrode is studied. We find that the polarizability of the planar electrode structure can significantly increase the tunneling rates for heavier carriers, potentially re…
Self-organization mechanism in Bridgman-grown MnBi2Te4/(Bi2Te3)n: influence on layer sequence and magnetic properties
Institute of Physics, Polish Academy of Sciences（波兰科学院物理研究所）；Faculty of Chemistry, Biological and Chemical Research Centre, University of Warsaw（华沙大学化学学院生物与化学研究中心）；Faculty of Physics, University of Warsaw（华沙大学物理学院）；Center for Science and Innovation in Spintronics, Tohoku University（东北大学自旋电子学科学与创新中心）；Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University（东北大学电气通信研究所纳米电子学与自旋电子学实验室）
