SiPMs在非线性区的性能
Performance of SiPMs in the nonlinear region
摘要：
由于硅光电倍增器具有有限数量的像素并且工作在盖革模式下，因此它们呈现饱和效应。它们对非线性区域中的光脉冲的响应是非常复杂的，原因有两个：雪崩后的像素充电影响随后雪崩的触发概率和电荷倍增，以及由于串扰和后脉冲的非平凡效应。本文提出了一种硅光电倍增器非线性响应的参数化方法，它能很好地考虑上述影响。使用闪烁晶体和探测器的不同组合的伽马射线光谱法的设置上的模型进行了测试。模型参数根据设置的基本特性（例如，闪烁晶体的寿命和像素恢复时间）。给出了从信号分辨率到能量分辨率的正确转换。
英文摘要：
Silicon photomultipliers present saturation effects as they have a limited number of pixels and work in Geiger mode. Their response to light pulses in the nonlinear region is very complex for two reasons: pixel recharging after an avalanche affects the trigger probability and charge multiplication of subsequent avalanches, and non-trivial effects due to crosstalk and afterpulsing. A parametrization of the nonlinear response of silicon photomultipliers was developed where the above effects were readily accounted for. The model was tested on a setup of gamma-ray spectrometry using different combinations of scintillation crystals and detectors. The model parameters were interpreted in terms of fundamental characteristics of the setup (e.g., lifetime of the scintillation crystal and pixel recovery time). The proper conversion from signal resolution to energy resolution was provided.
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