Magnetic and magneto-transport properties of manganese nitride films grown by molecular beam epitaxy have been investigated. Due to the mixed ferrimagnetic (FI) phase ($ε$-phase with TFI ~ 738 K) and the antiferromagnetic phase ($ζ$-phase with TN ~ 273 K), we observe magnetization hysteresis loops with non-zero exchange bias below TN, reaching ~ 0.22 T at 5 K. This indicates that noncollinear spins exist at the interfaces between two phases, creating a competition between interfacial Dzyaloshinskii-Moriya (DM) and exchange interactions. Strikingly, in addition to the normal Hall effect by Lorentz force and anomalous Hall effect by magnetization, we observe new contribution namely topological Hall effect below 75 K. This verifies the existence of topological spin texture, which is the consequence of competing interactions controlled by both applied field and temperature. Our work demonstrates that spintronic devices may be fabricated exploiting rich magnetic properties of different phases.
Tunable negative thermal expansion related with the gradual evolution of antiferromagnetic ordering in antiperovskite manganese nitrides Ag1-xNMn3+x (0<x<0.6)
Efficient magnetization switching driven by orbital torque originating from light 3d-transition-metal nitrides
Research Center for Magnetic and Spintronic Materials (CMSM), National Institute for Materials Science (NIMS)（物质材料研究机构（NIMS）磁性自旋电子材料研究中心）；Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology（京都工艺纤维大学电气电子工程学院）
Surface-oxygen-passivation driven large anomalous Hall conductivity (AHC) in nitride MXenes: Can AHC be a tool to determine functional groups in 2D ferro(i)magnets?
Time- and Frequency-Resolved Observation of Inverse Orbital Hall Effect in Gallium Nitride via Terahertz Polarimetry
The Institute for Solid State Physics, The University of Tokyo（东京大学固体物理研究所）；Department of Electronic Science and Engineering, Kyoto University（京都大学电子科学与工程系）
Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn$_2$YAl and Mn$_3$Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)
Topology analysis for anomalous Hall effect in the non-collinear antiferromagnetic states of Mn$_3\mathit{A}$N ($A$ = Ni, Cu, Zn, Ga, Ge, Pd, In, Sn, Ir, Pt)
Gate-tunable electronic properties of epitaxial Bi (111) films using a printable hexagonal boron nitride ionogel
Argonne National Laboratory（阿贡国家实验室）；Northwestern University（西北大学）；Case Western Reserve University（凯斯西储大学）；University of California, Riverside（加州大学河滨分校）
The Effect of Twisting Angle on the Electronic Properties and Electron Transport and Hall Effect in the Twisted Circular and Rectangular Graphene and Graphene/Boron-Nitride Channels
Vector Spin Chirality Switching in Noncollinear Antiferromagnets
Jawaharlal Nehru Centre for Advanced Scientific Research（贾瓦哈拉尔·尼赫鲁高级科学研究中心）；SASTRA Deemed University（萨斯特拉认定大学）；Deutsches Elektronen-Synchrotron (DESY)（德国电子同步加速器）；Indian Institute of Science Education and Research Thiruvananthapuram（印度科学教育研究所特里凡得琅分校）；UGC-DAE Consortium for Scientific Research（UGC-DAE科研联盟）；ALBA Synchrotron Light Source（阿尔巴同步辐射光源）；The University of Sydney（悉尼大学）；Indian Institute of Science Education and Research Bhopal（印度科学教育研究所博帕尔分校）
Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point
High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
十年来对二维（2D）原子晶体的深入研究表明，它们的性质可能与母体化合物的性质有很大不同。这些差异由量子限制引起的能带结构的变化决定，并且如果潜在的晶格对称性发生变化，则这些差异最为显著。在这里，我们报告了一个高品质的二维电子气在几层InSe封装在六方氮化硼在惰性气氛下。载流子迁移率在室温和液氦温度下分别超过1,000和10,000 cm 2/Vs，允许观察到充分发展的量子霍尔效应。传导电子占据单个2D子带并且具有小的有效质量。光致发光光谱表明，带隙增加超过0.5 eV的厚度从散装双层InSe。InSe单分子膜的带边光响应消失，这归因于单分子膜的镜面对称性。封装的2D InSe扩展了石墨烯类半导体家族，并且在质量方面与原子薄的二硫属化物和黑磷竞争。
Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS（巴黎萨克雷大学固体物理实验室，法国国家科学研究中心）；O. Ya. Usikov Institute for Radiophysics and Electronics, National Academy of Sciences of Ukraine（乌克兰国家科学院O.Ya.尤西科夫无线电物理与电子研究所）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（国立材料研究所电子与光学材料研究中心）；International Center for Materials Nanoarchitectonics, National Institute for Materials Science（国立材料研究所国际材料纳米架构中心）；Centre de nanosciences et de nanotechnologies, Université Paris-Saclay, CNRS（巴黎萨克雷大学纳米科学与纳米技术中心，法国国家科学研究中心）
Université Paris-Saclay（巴黎萨克雷大学）；CEA（法国原子能和替代能源委员会）；CNRS（法国国家科学研究中心）；SPEC（物质与环境研究实验室）；Laboratoire de Physique de l’Ecole normale supérieure（巴黎高等师范学院物理实验室）；ENS（巴黎高等师范学院）；Université PSL（巴黎文理研究大学）；Sorbonne Université（索邦大学）；Université Paris Cité（巴黎西岱大学）；CryoHEMT（CryoHEMT公司）；Centre de Nanosciences et de Nanotechnologies (C2N)（纳米科学与技术中心）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（国立材料研究所电子与光学材料研究中心）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（国立材料研究所材料纳米架构研究中心）
